公开(公告)号：US07177781B2

公开(公告)日：2007-02-13

申请号：US10521118

申请日：2003-07-23

Applicant: Eric J. Strang ,  Richard Parsons ,  Jody Goldfield

Inventor： Eric J. Strang ,  Richard Parsons ,  Jody Goldfield

IPC: G06F11/30

CPC classification number: H01J37/32192 ,  H01J37/32935 ,  H01J37/3299

Abstract: The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

Abstract translation: 本发明提供了一种用于等离子体处理的诊断系统，其中诊断系统包括多模谐振器，电源，检测器和控制器。 控制器耦合到电源和检测器，并且其被配置为提供用于执行与诊断系统相关联的多个监视和控制功能的人机接口，包括：耿氏二极管电压监视器，耿氏二极管电流监视器，变容二极管 二极管电压监视器，检测器电压监视器，变容二极管电压控制，变容二极管电压扫描控制，共振锁定控制，图形用户控制和电子密度监视器。 诊断系统还可以提供耦合到控制器并被配置为提供远程人机界面的遥控器。 远程人机界面。 远程人机界面可以提供图形用户界面，以便允许操作者对诊断系统进行远程控制。 此外，本发明提供了几种控制诊断系统以便执行监视和控制功能的方法。

公开(公告)号：US07164236B2

公开(公告)日：2007-01-16

申请号：US10793253

申请日：2004-03-05

Applicant: Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

Inventor： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

IPC: H05B31/26 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32935

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.

Abstract translation: 一种用于产生和控制形成在电容耦合等离子体系统（100）中的等离子体（130）的方法和装置，其具有工件支撑构件（170）形式的等离子体电极（140）和偏置电极，其中等离子体电极 是单一的并且具有由多个RF馈电线（156）限定的多个区域（RF）和传递给其的RF功率。 电极区域也可以被定义为由绝缘体（426）分离的电极段（420）。 一组过程参数A = {n，τi，i，P i， 被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量，τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位，P < SUB> i 是通过位置L i i处的第i个RF馈线传送到电极的RF功率，S是RF功率到 电极通过RF馈线。 调整这些参数中的一个或多个，使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件（176）。

公开(公告)号：US07108751B2

公开(公告)日：2006-09-19

申请号：US10739126

申请日：2003-12-19

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/3244 ,  H01J37/32935

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.

Abstract translation: 描述了包括气体注入系统的等离子体处理装置，其中气体注入系统包括气体注入组件主体，联接到气体注入组件主体的可消耗气体注入板，以及耦合到气体注入系统 气体注入系统体和消耗气体注入板。 气体注入系统被配置为从至少一个质量流量控制器接收处理气体并将处理气体分配到等离子体处理装置内的处理区域，并且压力传感器被配置成测量气体注入气室内的气体注入压力 。 耦合到压力传感器的控制器被配置为从压力传感器接收信号并且基于该信号来确定可消耗气体注入板的状态。 确定可消耗气体注入板的状态的方法包括：测量与处理气体质量流量或处理压力的变化相关联的气体注入压力的变化; 确定压力变化的响应时间; 并将侵蚀期间的响应时间与不侵蚀期间的响应时间进行比较。

公开(公告)号：US07103443B2

公开(公告)日：2006-09-05

申请号：US10482341

申请日：2002-06-20

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: G06F19/00

CPC classification number: H01J37/3244 ,  H01L21/67017

Abstract: A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

Abstract translation: 作为等离子体处理系统的一部分，在气体注入系统中利用包括多个成形孔（例如，声音和简单孔和发散喷嘴）的气体注射板的方法和系统。 通过利用成形孔，可以改善气流的方向性。 这种改进在高纵横比处理中特别有益。

公开(公告)号：US06740853B1

公开(公告)日：2004-05-25

申请号：US10088504

申请日：2002-09-17

Applicant: Wayne L. Johnson ,  Eric J. Strang

Inventor： Wayne L. Johnson ,  Eric J. Strang

IPC: H05B368

CPC classification number: H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6831

Abstract: A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

Abstract translation: 用于在等离子体处理期间保持衬底（例如，晶片或LCD面板）的衬底保持器。 衬底保持器是一堆处理元件，每个处理元件执行至少一个功能。 这些元件包括静电卡盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。 每个元件被设计成与处理系统的特性匹配，例如通过在正常处理期间基于衬底的热损失特性施加热量。 集成设计允许对操作条件的精确控制，包括但不限于快速加热和快速冷却基板。

公开(公告)号：US08877000B2

公开(公告)日：2014-11-04

申请号：US10469592

申请日：2002-02-26

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23F1/00 ,  C23C16/50 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/5096 ,  H01J37/3244

Abstract: A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).

Abstract translation: 描述了一种等离子体处理室，其包括与连续喷淋头喷射孔组合使用的脉冲气体喷射孔/喷嘴。 连续流喷淋头喷射孔引入连续的气体流，同时脉冲气体喷射孔/喷嘴将高压气体循环注入腔室。 在一个实施例中，中央计算机可以监测和控制压力测量装置并利用测量来调整处理参数（例如脉冲持续时间，脉冲重复率和处理气体的脉冲质量流率）。

公开(公告)号：US08852347B2

公开(公告)日：2014-10-07

申请号：US12814278

申请日：2010-06-11

Applicant: Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

Inventor： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC: C23C16/00 ,  C23C16/52 ,  C23C16/44 ,  H05B3/00 ,  C23C16/455 ,  C23F1/00

CPC classification number: H05B3/00 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/52 ,  H05B2203/014 ,  H05B2203/022

Abstract: A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

Abstract translation: 本发明描述了一种用于其中的气体加热装置和处理系统，用于使用气相沉积工艺在基片上沉积薄膜。 气体加热装置包括加热元件阵列，该加热元件阵列具有多个加热元件区域，该多个加热元件区域被配置为在多个加热元件区域中或通过所述多个加热元件区域接收成膜组合物的流动，以便导致成膜组合物的一种或多种成分的热解 加热时。 另外，处理系统可以包括被配置为支撑衬底的衬底保持器。 衬底保持器可以包括后侧气体供应系统，其构造成将热传递气体供应到所述衬底的背面，其中所述背侧气体供应系统被配置为独立地将所述传热气体供应到所述衬底的背侧的多个区域。

公开(公告)号：US08828185B2

公开(公告)日：2014-09-09

申请号：US12772232

申请日：2010-05-02

Applicant: Martin Kent ,  Eric J. Strang

Inventor： Martin Kent ,  Eric J. Strang

IPC: C23F1/00

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US08207476B2

公开(公告)日：2012-06-26

申请号：US12631278

申请日：2009-12-04

Applicant: Yuji Tsukamoto ,  Eric J. Strang

Inventor： Yuji Tsukamoto ,  Eric J. Strang

IPC: H05B1/02 ,  H05B3/68 ,  F27B5/06 ,  F27B5/18

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract translation: 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度控制的支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 -K）的不均匀的空间变化。

公开(公告)号：US08036869B2

公开(公告)日：2011-10-11

申请号：US10673467

申请日：2003-09-30

Applicant: Eric J. Strang ,  Andrej Mitrovic

Inventor： Eric J. Strang ,  Andrej Mitrovic

IPC: G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC classification number: G05B19/41885 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.

Abstract translation: 一种用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理有关的数据，输入与半导体处理工具相关的第一原理物理模型，使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果。 第一原理模拟结果用于建立经验模型，并选择第一原理模拟结果和经验模型中的至少一个来控​​制半导体处理工具执行的过程。