公开(公告)号：US20180215952A1

公开(公告)日：2018-08-02

申请号：US15505672

申请日：2015-07-02

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Takahiro UMEDA

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/304 ,  H01L21/3212

Abstract: The present invention provides a polishing composition which can achieve a high polishing speed for the layer containing copper and at the same time, can suppress dissolution of the layer containing cobalt, in polishing an object to be polished having a layer containing copper and a layer containing cobalt.Disclosed is a polishing composition used for polishing an object to be polished having a layer containing copper and a layer containing cobalt, which comprises an oxidizing agent, and at least one cobalt dissolution inhibitor selected from the group consisting of a compound having a nitrogen-containing 5-membered ring structure, and an aminocarboxylic acid having two or more carboxyl groups.

公开(公告)号：US20150344738A1

公开(公告)日：2015-12-03

申请号：US14440208

申请日：2013-10-29

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Yasuto ISHIDA ,  Tatsuhiko HIRANO

IPC: C09G1/02 ,  H01L21/321

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/3212

Abstract: [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate.[Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

Abstract translation: [问题]提供一种抛光组合物，其适用于抛光具有金属布线层的抛光对象，并且能够在保持高抛光速率的同时减少台阶缺陷。 [解决方案]提供一种抛光组合物，其用于抛光具有金属布线层的抛光对象，该金属布线层含有金属腐蚀抑制剂，络合剂，表面活性剂和水，并且其中抛光后抛光对象表面的固体表面能 使用研磨用组合物的研磨对象为30mN / m以下，表面活性剂优选为阴离子表面活性剂。

公开(公告)号：US20250101262A1

公开(公告)日：2025-03-27

申请号：US18887828

申请日：2024-09-17

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Alexandra CARLSON

IPC: C09G1/02

Abstract: Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for copper, tantalum, and TEOS. Polishing compositions comprising silica particles (greater than 12 nm), a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to TEOS selectivities of greater than 1 and low Co removal rates (e.g., less than 200 Å/min), allowing for good topography correction (e.g., reduced dishing).

公开(公告)号：US20210071111A1

公开(公告)日：2021-03-11

申请号：US17011371

申请日：2020-09-03

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu YOSHINO ,  Shogo ONISHI ,  Yasuto ISHIDA

IPC: C11D3/37 ,  C11D1/00 ,  C11D11/00 ,  B08B1/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

公开(公告)号：US20210005462A1

公开(公告)日：2021-01-07

申请号：US16977522

申请日：2019-01-21

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu YOSHINO ,  Ayano YAMAZAKI ,  Shogo ONISHI ,  Yasuto ISHIDA

IPC: H01L21/306 ,  C09G1/02 ,  C09K3/14

Abstract: The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished.

公开(公告)号：US20200308449A1

公开(公告)日：2020-10-01

申请号：US16797177

申请日：2020-02-21

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Tsutomu YOSHINO ,  Shogo ONISHI ,  Hirofumi IKAWA ,  Yasuto ISHIDA

IPC: C09G1/02

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

公开(公告)号：US20180057711A1

公开(公告)日：2018-03-01

申请号：US15562692

申请日：2016-03-11

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Takeki SATO ,  Yukinobu YOSHIZAKI ,  Koichi SAKABE

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/31053

Abstract: An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film.Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

公开(公告)号：US20150315418A1

公开(公告)日：2015-11-05

申请号：US14440216

申请日：2013-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Takahiro UMEDA ,  Shogo ONISHI ,  Takeshi YOSHIKAWA ,  Yoshihiro KACHI

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

Abstract translation: [问题]提供一种可以充分保持阻挡层和绝缘膜的高抛光速度并抑制诸如腐蚀或a牙等表面缺陷的发生的抛光组合物。 [解决方案]提供一种抛光组合物，其用于抛光具有阻挡层，金属布线层和绝缘膜的抛光对象的抛光组合物，所述抛光组合物包括磨粒，氧化剂，金属腐蚀抑制剂，pH 调整剂和水，其中当颗粒的一个颗粒的累积粒子数达到总颗粒重量的90％至直径的90％时，磨粒的纵横比为1.22或更小，颗粒直径D90的比D90 / D10 当通过激光衍射散射法确定的磨粒的粒度分布中，当微细颗粒侧的累积粒子重量达到整个颗粒的总颗粒重量的10％时颗粒的D10为1.5以上。