公开(公告)号：US06417990B1

公开(公告)日：2002-07-09

申请号：US09639700

申请日：2000-08-16

申请人： Yuming Zhou ,  Hao Fang ,  Nurul Amin

发明人： Yuming Zhou ,  Hao Fang ,  Nurul Amin

IPC分类号： G11B5147

CPC分类号： G11B5/313 ,  G11B5/3146 ,  G11B5/3967

摘要： A magnetic transducing head having an air bearing surface has a bottom shield, a shared pole, a read element, a substantially planar composite top pole; and a conductive coil. The read element is positioned between the bottom shield and the shared pole. The top pole is formed of high magnetic moment pole tip portion and a high resistivity yoke portion. The pole tip portion of the top pole is substantially coplanar with the yoke portion of the top pole. The pole tip portion of the top pole is separated from the shared pole at the air bearing surface by a write gap, while the yoke portion of the top pole is in contact with the shared pole opposite the air bearing surface. At least a portion of the conductive coil is positioned between the shared pole and the top pole.

摘要翻译： 具有空气轴承表面的磁转换头具有底部屏蔽，共享极，读取元件，基本上平面的复合顶部极; 和导电线圈。 读取元件位于底部屏蔽和共享极之间。 顶极由高磁矩极尖部分和高电阻率磁轭部分形成。 顶极的极尖部分与顶极的轭部基本共面。 顶极的极尖部分通过写入间隙与空气轴承表面的共享极分离，而顶极的轭部与与空气支承表面相对的共享极接触。 导电线圈的至少一部分位于共享极和顶极之间。

公开(公告)号：US20070025013A1

公开(公告)日：2007-02-01

申请号：US11190739

申请日：2005-07-27

申请人： Shaoping Li ,  Daniel Brown ,  Michael Montemorra ,  Nurul Amin

发明人： Shaoping Li ,  Daniel Brown ,  Michael Montemorra ,  Nurul Amin

IPC分类号： G11B17/00

CPC分类号： G11B25/043 ,  G11B5/102 ,  G11B33/1493

摘要： The present invention includes a data storage system. The data storage system includes an enclosure and at least one perpendicular recording device positioned within the enclosure and in communication with a recording medium. The recording medium includes a layer of magnetic material that has a permeability that is substantially similar to a permeability of a magnetic material in the recording device. The data storage system also includes a soft magnetic material included in the enclosure for shielding magnetic stray fields from the perpendicular recording device. The soft magnetic material has a permeability that is at least as great as approximately the permeability of the layer of magnetic material of the recording medium.

摘要翻译： 本发明包括数据存储系统。 数据存储系统包括外壳和位于外壳内并与记录介质通信的至少一个垂直记录装置。 记录介质包括具有与记录装置中的磁性材料的磁导率基本相似的磁导率的磁性材料层。 数据存储系统还包括用于屏蔽来自垂直记录装置的磁性杂散场的外壳中的软磁材料。 软磁性材料的磁导率至少与记录介质的磁性材料层的磁导率大致相同。

公开(公告)号：US07474499B2

公开(公告)日：2009-01-06

申请号：US11190739

申请日：2005-07-27

申请人： Shaoping Li ,  Daniel John Brown ,  Michael R. Montemorra ,  Nurul Amin

发明人： Shaoping Li ,  Daniel John Brown ,  Michael R. Montemorra ,  Nurul Amin

IPC分类号： G11B5/012 ,  G11B17/00

CPC分类号： G11B25/043 ,  G11B5/102 ,  G11B33/1493

摘要： The present invention includes a data storage system. The data storage system includes an enclosure and at least one perpendicular recording device positioned within the enclosure and in communication with a recording medium. The recording medium includes a layer of magnetic material that has a permeability that is substantially similar to a permeability of a magnetic material in the recording device. The data storage system also includes a soft magnetic material included in the enclosure for shielding magnetic stray fields from the perpendicular recording device. The soft magnetic material has a permeability that is at least as great as approximately the permeability of the layer of magnetic material of the recording medium.

摘要翻译： 本发明包括数据存储系统。 数据存储系统包括外壳和位于外壳内并与记录介质通信的至少一个垂直记录装置。 记录介质包括具有与记录装置中的磁性材料的磁导率基本相似的磁导率的磁性材料层。 数据存储系统还包括用于屏蔽来自垂直记录装置的磁性杂散场的外壳中的软磁材料。 软磁性材料的磁导率至少与记录介质的磁性材料层的磁导率大致相同。

公开(公告)号：US07509748B2

公开(公告)日：2009-03-31

申请号：US11514793

申请日：2006-09-01

申请人： Song Xue ,  Patrick Ryan ,  Nurul Amin

发明人： Song Xue ,  Patrick Ryan ,  Nurul Amin

IPC分类号： G01C17/38

CPC分类号： G01C17/28

摘要： The disclosure relates to micro-electromechanical systems (MEMS) and magnetic MEMS sensors. The sensors include a substrate having a surface, a first magnetic field detector positioned on the surface, a second magnetic field detector positioned on the surface proximate to the first magnetic field detector, and a third magnetic field detector positioned on the surface proximate to the first and second magnetic field detectors. Each of the first, second and third magnetic field detector is capable of detecting external magnetic fields that are mutually orthogonal along three directions. In certain embodiments, the magnetic MEMS sensors may be useful as electronic compasses. The disclosure also relates to fabricating a magnetic MEMS device, such as an electronic compass, from or on a single wafer, which includes multiple MEMS sensors.

摘要翻译： 本公开涉及微机电系统（MEMS）和磁MEMS传感器。 传感器包括具有表面的基板，位于表面上的第一磁场检测器，位于靠近第一磁场检测器的表面上的第二磁场检测器，以及位于靠近第一磁场检测器的表面上的第三磁场检测器 和第二磁场检测器。 第一，第二和第三磁场检测器中的每一个能够检测沿着三个方向相互正交的外部磁场。 在某些实施例中，磁性MEMS传感器可用作电子罗盘。 本公开还涉及从包括多个MEMS传感器的单个晶片上或之上制造诸如电子罗盘的磁MEMS装置。

公开(公告)号：US20070209437A1

公开(公告)日：2007-09-13

申请号：US11348930

申请日：2006-04-07

申请人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

发明人： Song Xue ,  Nurul Amin ,  Patrick Ryan ,  John Wright ,  Jeffery Berkowitz ,  Insik Jin

IPC分类号： B81B7/02 ,  G01P15/105 ,  G01B7/00 ,  H01L27/22 ,  H01L43/00

CPC分类号： B81B3/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/56 ,  G01C19/5663 ,  G01D5/145 ,  G01L9/007 ,  G01P15/0802 ,  G01P15/0885 ,  G01P15/105 ,  G01P15/11 ,  G01P15/18 ,  G01P2015/0828 ,  G01P2015/084 ,  H01L29/84

摘要： The present invention relates to magnetic micro-electromechanical systems (MEMS) or magnetic MEMS devices, particularly electronic devices in which a member adjoins a base or substrate and extends from the substrate proximate to a magnetic field element having an altered output associated with movement of the member. The first magnetic field element is adapted to emit or detect a magnetic field and positioned proximate to the member, and the second magnetic field element adapted to emit or detect a magnetic field and positioned proximate to the base or substrate, such that movement of the member in a first direction by a non-magnetic force results in a variation of magnetic field strength associated with displacement of the sensor in a first direction. The invention also relates to methods for fabricating magnetic MEMS devices, transducers, sensors, and accelerometers.

摘要翻译： 本发明涉及磁微机电系统（MEMS）或磁MEMS器件，特别是电子器件，其中元件邻接基底或衬底并且从衬底附近延伸到具有改变的输出的磁场元件，该变化的输出与 会员。 第一磁场元件适于发射或检测磁场并且定位成靠近构件，并且第二磁场元件适于发射或检测磁场并且定位成靠近基底或基底，使得该构件的移动 通过非磁力在第一方向上导致与传感器在第一方向上的位移相关联的磁场强度的变化。 本发明还涉及用于制造磁MEMS器件，换能器，传感器和加速度计的方法。

公开(公告)号：US20060176601A1

公开(公告)日：2006-08-10

申请号：US11054456

申请日：2005-02-09

申请人： Nurul Amin ,  Song Xue ,  Partrick Ryan

发明人： Nurul Amin ,  Song Xue ,  Partrick Ryan

IPC分类号： G11B5/03 ,  G11B5/17

CPC分类号： G11B5/3113 ,  G11B5/1278

摘要： The present invention provides a magnetic writer. The magnetic writer comprises a write circuit, a write pole, a first write coil for inducing a first magnetic field in the write pole by a first current provided by the write circuit, and a second write coil for inducing a second magnetic field in the write pole by a second current provided by the write circuit. The write circuit provides a first current through the first coil and a second current through the second coil. The write circuit controls the direction of the first current and the second current so that, during writing, the first magnetic field and the second magnetic field have components perpendicular to the air bearing surface that are in the same direction. When not writing, the first magnetic field and second magnetic field have components perpendicular to the air bearing surface in opposite directions.

摘要翻译： 本发明提供一种磁性写入器。 磁性写入器包括写入电路，写入极，用于通过由写入电路提供的第一电流在写入极中引起第一磁场的第一写入线圈和用于在写入中引起第二磁场的第二写入线圈 由写入电路提供的第二电流。 写入电路提供通过第一线圈的第一电流和通过第二线圈的第二电流。 写入电路控制第一电流和第二电流的方向，使得在写入期间，第一磁场和第二磁场具有垂直于空气轴承表面的分量处于相同方向的分量。 当不写时，第一磁场和第二磁场具有相反方向垂直于空气轴承表面的分量。

公开(公告)号：US20050213246A1

公开(公告)日：2005-09-29

申请号：US10809245

申请日：2004-03-25

申请人： Mark Kief ,  Nurul Amin ,  Song Xue

发明人： Mark Kief ,  Nurul Amin ,  Song Xue

IPC分类号： G11B5/31 ,  G11B5/127 ,  G11B5/17

CPC分类号： G11B5/1272 ,  G11B5/17

摘要： A magnetic write head for recording data having reduced erasure caused by a magnetic field is disclosed. The magnetic write head include a main pole and a conductive coil positioned adjacent the main pole. The conductive coil is insulated from the main pole. The magnetic write head includes means for directing a magnetic field produced by the conductive coil toward the main pole.

摘要翻译： 公开了一种用于记录由磁场引起的擦除减少的数据的磁写头。 磁写头包括主极和邻近主极定位的导电线圈。 导电线圈与主极绝缘。 磁写头包括用于将由导电线圈产生的磁场引向主极的装置。

公开(公告)号：US20120149183A1

公开(公告)日：2012-06-14

申请号：US13400364

申请日：2012-02-20

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L21/329

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

摘要翻译： 一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属接触形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触， 第二结和第三结是欧姆接触。

公开(公告)号：US20120032131A1

公开(公告)日：2012-02-09

申请号：US13278245

申请日：2011-10-21

申请人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

发明人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

公开(公告)号：US07911833B2

公开(公告)日：2011-03-22

申请号：US12501796

申请日：2009-07-13

申请人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

发明人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

IPC分类号： G11C11/36

CPC分类号： H01L27/224 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/1021

摘要： An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

摘要翻译： 目前公开了一种反并联二极管结构和制造方法。 在一些实施例中，反并联二极管结构具有包括设置在第一半导体层和第二半导体层之间的第一绝缘体层的半导体区域。 半导体区域可以通过第一金属材料在第一侧上结合并且通过第二金属材料在第二侧上结合，使得防止低于预定值的电流通过半导体区域，并且超过预定值的电流通过 半导体区域。