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11.Method and apparatus providing multi-step deposition of thin film layer 有权
Title translation: 提供薄膜层多步沉积的方法和装置公开(公告)号:US08921147B2
公开(公告)日:2014-12-30
申请号:US13966663
申请日:2013-08-14
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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12.HIGH EFFICIENCY PHOTOVOLTAIC DEVICE EMPLOYING CADMIUM SULFIDE TELLURIDE AND METHOD OF MANUFACTURE 有权
Title translation: 使用堇青石的高效光伏器件及其制造方法公开(公告)号:US20140261688A1
公开(公告)日:2014-09-18
申请号:US14209740
申请日:2014-03-13
Applicant: FIRST SOLAR, INC
Inventor: Arnold Allenic , Zhigang Ban , Benyamin Buller , Markus Gloeckler , Benjamin Milliron , Xilin Peng , Rick C. Powell , Jigish Trivedi , Oomman K. Varghese , Jianjun Wang , Zhibo Zhao
IPC: H01L31/0296 , H01L31/18
CPC classification number: H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/073 , H01L31/18 , H01L31/1832 , Y02E10/543
Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.
Abstract translation: 公开了包含至少一种硫镉碲化镉(CdSxTe1-x)层的光伏器件,以及形成这种光伏器件的方法。
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13.METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER 有权
Title translation: 提供薄膜层的多步沉积的方法和装置公开(公告)号:US20140051206A1
公开(公告)日:2014-02-20
申请号:US13966663
申请日:2013-08-14
Applicant: First Solar, Inc
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
IPC: H01L31/18
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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14.
公开(公告)号:US20130183794A1
公开(公告)日:2013-07-18
申请号:US13739183
申请日:2013-01-11
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
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