公开(公告)号：US07524736B2

公开(公告)日：2009-04-28

申请号：US11607802

申请日：2006-12-01

申请人： Giampiero Ottaviani ,  Federico Corni ,  Paolo Ferrari ,  Flavio Francesco Villa

发明人： Giampiero Ottaviani ,  Federico Corni ,  Paolo Ferrari ,  Flavio Francesco Villa

IPC分类号： H01L21/30 ,  C03C15/00

CPC分类号： H01L21/76254

摘要： To manufacture a layer of semiconductor material, a first wafer of semiconductor material is subjected to implantation to form a defect layer at a distance from a first face; the first wafer is bonded to a second wafer, by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms are introduced into the first wafer through a second face at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600° C. Thereby, the first wafer splits into a usable layer, bonded to the second wafer, and a remaining layer disposed between the defect layer and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components.

摘要翻译： 为了制造半导体材料层，将半导体材料的第一晶片进行注入以形成距离第一面一定距离的缺陷层; 通过将存在于第二晶片上的绝缘层与第一晶片的第一面接触来将第一晶片接合到第二晶片。 然后，氢原子通过第二面以能量引入第一晶片，以避免在第一晶片中以及在低于600℃的温度下产生缺陷。由此，第一晶片分裂成可用层， 粘合到第二晶片，以及设置在第一晶片的缺陷层和第二面之间的剩余层。 在接合之前，第一晶片经受用于获得集成部件的处理步骤。

公开(公告)号：US06610556B2

公开(公告)日：2003-08-26

申请号：US10124781

申请日：2002-04-16

申请人： Benedetto Vigna ,  Paolo Ferrari

发明人： Benedetto Vigna ,  Paolo Ferrari

IPC分类号： H01L2100

CPC分类号： H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

摘要： The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

公开(公告)号：US06437418B1

公开(公告)日：2002-08-20

申请号：US09170914

申请日：1998-10-13

申请人： Paolo Ferrari ,  Armando Manfredi ,  Benedetto Vigna

发明人： Paolo Ferrari ,  Armando Manfredi ,  Benedetto Vigna

IPC分类号： H01L2900

CPC分类号： H01L28/10 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

摘要翻译： 集成电感器包括形成在第二金属层中的金属线圈。 线圈由通过去除在第一金属层中形成的牺牲区域而获得的气隙的由半导体材料体间隔开延伸的支架支撑。 托架由半导体材料体通过支撑区域承载，该支撑区域周向地布置在支架上并且通过连接到气隙的孔彼此分离。 厚氧化物区域在半导体材料体的上方延伸到气隙下方，以减小电感器和半导体材料体之间的电容耦合。 因此，电感器具有高品质因素，并且通过与当前微电子工艺兼容的工艺来产生。

公开(公告)号：US06396174B1

公开(公告)日：2002-05-28

申请号：US09523571

申请日：2000-03-10

申请人： Benedetto Vigna ,  Paolo Ferrari

发明人： Benedetto Vigna ,  Paolo Ferrari

IPC分类号： H01L2174

CPC分类号： H02N1/008 ,  G11B5/5552 ,  G11B21/106 ,  G11B21/21

摘要： The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

公开(公告)号：US06209394B1

公开(公告)日：2001-04-03

申请号：US09178285

申请日：1998-10-23

申请人： Paolo Ferrari ,  Benedetto Vigna ,  Aurea Cuccia ,  Marco Ferrera ,  Pietro Montanini

发明人： Paolo Ferrari ,  Benedetto Vigna ,  Aurea Cuccia ,  Marco Ferrera ,  Pietro Montanini

IPC分类号： G01P904

CPC分类号： G01C19/574 ,  G01C19/5769 ,  G01P15/0802 ,  H01L21/76202 ,  H01L21/764

摘要： An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

摘要翻译： 角速度传感器包括一对移动质量块，其形成在外延层中并且通过锚定元件锚固到装置的其余部分。 移动质量彼此对称，并且具有插入有第一固定激励电极的第一移动激励电极和插入第二固定检测电极的第二移动检测电极。 第一移动和固定激励电极沿第一方向延伸，并且第二移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。

公开(公告)号：US06184052B2

公开(公告)日：2001-02-06

申请号：US09428863

申请日：1999-10-26

申请人： Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

发明人： Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

IPC分类号： H01L2100

CPC分类号： H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

摘要： A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.

摘要翻译： 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。

公开(公告)号：US06134088A

公开(公告)日：2000-10-17

申请号：US109117

申请日：1998-07-02

申请人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

发明人： Bruno Murari ,  Benedetto Vigna ,  Paolo Ferrari

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33

CPC分类号： G11B5/3925 ,  G11B5/3183

摘要： An electromagnetic head for a storage device comprises a magnetic core forming a magnetic circuit, and a magnetoresistive means. The magnetic core is interrupted by an air-gap, thereby separating a first pole and second pole of the magnetic core. The magnetoresistive means is disposed in the region of the air-gap, and is connected to the magnetic core so as to be connected in the magnetic circuit.

摘要翻译： 用于存储装置的电磁头包括形成磁路的磁芯和磁阻装置。 磁芯被气隙中断，从而分离磁芯的第一极和第二极。 磁阻装置设置在气隙的区域中，并且与磁芯连接以便连接在磁路中。

公开(公告)号：US6104073A

公开(公告)日：2000-08-15

申请号：US903511

申请日：1997-07-30

申请人： Paolo Ferrari ,  Mario Foroni ,  Benedetto Vigna ,  Flavio Villa

发明人： Paolo Ferrari ,  Mario Foroni ,  Benedetto Vigna ,  Flavio Villa

IPC分类号： G01P15/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  H01L29/82 ,  H01L21/00 ,  H01L27/01 ,  H01L27/20

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.

摘要翻译： 加速度传感器形成在形成由具有气隙的绝缘层分离的第一和第二单晶硅晶片的专用SOI衬底的一部分的单晶硅晶片中。 在空气间隙中的第二晶片中形成一个阱，然后将其向上延伸到气隙以释放形成传感器的可移动质量块的单晶硅质量块; 可移动物体具有面对多个固定电极的两个可动电极数。 在空闲状态下，每个可移动电极与面对可动电极的两个固定电极分开不同的距离。

公开(公告)号：US4829344A

公开(公告)日：1989-05-09

申请号：US921071

申请日：1986-10-20

申请人： Franco Bertotti ,  Paolo Ferrari

发明人： Franco Bertotti ,  Paolo Ferrari

IPC分类号： H01L27/06 ,  H01L27/02

CPC分类号： H01L27/0248

摘要： This electronic semiconductor device for protecting integrated circuits against electrostatic discharges has a minimal bulk, can withstand high damaging voltages and be produced during the same production phases as the integrated circuit to be protected. The device comprises a pair of diodes connected back to back, arranged between an input of the integrated circuit to be protected and the ground line, with the cathodes connected together and formed by a single semiconductor layer and the anodes formed in a single process phase by employing top-bottom production techniques.

摘要翻译： 用于保护集成电路免受静电放电的该电子半导体器件具有最小的体积，可以承受高的损坏电压并且在与待保护的集成电路相同的生产阶段期间产生。 该装置包括背对背连接的一对二极管，其布置在要被保护的集成电路的输入端和接地线之间，阴极连接在一起并由单个半导体层形成，并且阳极由单个工艺阶段形成 采用顶级生产技术。

公开(公告)号：US4725810A

公开(公告)日：1988-02-16

申请号：US876964

申请日：1986-06-20

申请人： Mario Foroni ,  Paolo Ferrari ,  Franco Bertotti

发明人： Mario Foroni ,  Paolo Ferrari ,  Franco Bertotti

IPC分类号： H01L27/04 ,  H01C17/06 ,  H01L21/265 ,  H01L21/822 ,  H01L29/8605 ,  H01C1/02 ,  H01C17/00 ,  B05D5/12 ,  B44C1/22

CPC分类号： H01L29/8605 ,  H01L21/26513 ,  Y10T29/49082

摘要： This method of making an implanted resistor comprises the steps of implanting the resistor with ordinary techniques and deposition over the implanted resistor of a polysilicon layer having a set thickness and fully covering the resistor. Thus, the resulting resistor is unaffected by any subsequent thermal treatments and its value remains constant irrespective of any high potential metal layers or connections crossing it. The method affords in particular resistive values of the order of 1 kOhms/square.

摘要翻译： 制造注入电阻器的这种方法包括以下步骤：通过普通技术注入电阻器并沉积在具有设定厚度并完全覆盖电阻器的多晶硅层的注入电阻器上。 因此，所得到的电阻器不受任何后续热处理的影响，并且其值保持恒定，而与任何高电势金属层或穿过其的连接无关。 该方法特别提供约1千欧姆/平方的电阻值。