REDUCING LOSS IN STACKED QUANTUM DEVICES
    11.
    发明申请

    公开(公告)号:US20190229094A1

    公开(公告)日:2019-07-25

    申请号:US16333020

    申请日:2016-09-13

    Applicant: Google LLC

    Abstract: The proposed device includes a first chip (102) comprising a superconducting quantum bit and a second chip (104) bonded to the first chip, the second chip including a substrate (108) having first and second opposing surfaces. The first surface (101) facing the first chip includes a layer (105) of superconductor material which includes a first circuit element. The second chip further includes a second layer (107) on the second surface (103) which includes a second circuit element, and a through connector (109) that extends from the first surface to the second surface and electrically connects a portion of the superconductor material layer to the second circuit element.

    JOSEPHSON JUNCTIONS WITH REDUCED STRAY INDUCTANCE

    公开(公告)号:US20230225223A1

    公开(公告)日:2023-07-13

    申请号:US18117918

    申请日:2023-03-06

    Applicant: Google LLC

    CPC classification number: H10N60/0912 G06N10/00 H10N60/12 H10N60/805

    Abstract: Methods, systems and apparatus for forming Josephson junctions with reduced stray inductance. In one aspect, a device includes a substrate; a first superconductor layer on the substrate; an insulator layer on the first superconductor layer; a second superconductor layer on the insulator layer, wherein the first superconductor layer, the insulator layer, and the second superconductor layer form a superconductor tunnel junction; and a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second contact to the superconductor tunnel junction, respectively.

    Hybrid kinetic inductance devices for superconducting quantum computing

    公开(公告)号:US11450938B2

    公开(公告)日:2022-09-20

    申请号:US16462263

    申请日:2017-09-13

    Applicant: Google LLC

    Abstract: A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

    HYBRID KINETIC INDUCTANCE DEVICES FOR SUPERCONDUCTING QUANTUM COMPUTING

    公开(公告)号:US20190341668A1

    公开(公告)日:2019-11-07

    申请号:US16462263

    申请日:2017-09-13

    Applicant: Google LLC

    Abstract: A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

    AMPLIFIER FREQUENCY MATCHING FOR QUBIT READOUT

    公开(公告)号:US20190229690A1

    公开(公告)日:2019-07-25

    申请号:US16333122

    申请日:2016-09-15

    Applicant: Google LLC

    Abstract: A quantum computing devices includes: a qubit; a readout device coupled to the qubit, the readout device including a frequency filter having a filter frequency range; and an amplifier device coupled to the readout device, in which the amplifier device is configured to amplify a measurement signal from the readout device upon receiving a pump signal having a pump frequency that is outside of the filter frequency range of the frequency filter.

    Resetting Quantum States of Qubits Via On-Chip Lossy Resonators within Quantum Computing Systems

    公开(公告)号:US20250068952A1

    公开(公告)日:2025-02-27

    申请号:US18456208

    申请日:2023-08-25

    Applicant: Google LLC

    Abstract: A quantum computing system includes a cryogenic chamber and an integrated circuit located in the chamber. The integrated circuit includes a substrate, a qubit formed on the substrate, and a dissipative element that is formed on the substrate and coupled to the qubit. When the qubit is tuned to a first flux value, the integrated circuit is enabled to perform quantum-computation operations on a set of quantum states of the qubit. The quantum states include a ground state and an excited state. When the qubit is tuned to a second flux value, the qubit is enabled to transfer energy associated with the excited state from the qubit to the dissipative element. Upon the energy transfer, the qubit is transitioned to the ground state. The dissipative element is enabled to dissipate the transferred energy to a portion of the substrate.

    Josephson junctions with reduced stray inductance

    公开(公告)号:US12239027B2

    公开(公告)日:2025-02-25

    申请号:US18117918

    申请日:2023-03-06

    Applicant: Google LLC

    Abstract: Methods, systems and apparatus for forming Josephson junctions with reduced stray inductance. In one aspect, a device includes a substrate; a first superconductor layer on the substrate; an insulator layer on the first superconductor layer; a second superconductor layer on the insulator layer, wherein the first superconductor layer, the insulator layer, and the second superconductor layer form a superconductor tunnel junction; and a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second contact to the superconductor tunnel junction, respectively.

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