公开(公告)号：US20240006400A1

公开(公告)日：2024-01-04

申请号：US17856965

申请日：2022-07-02

申请人： Intel Corporation

发明人： Kyle J. Arrington ,  Karumbu Nathan Meyyappan ,  Srikant Nekkanty

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC分类号： H01L25/18 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/49811 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13105 ,  H01L2224/13139 ,  H01L2224/13169 ,  H01L2224/13144 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/81405 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2924/01008 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L24/29

摘要： In one embodiment, an integrated circuit assembly includes a substrate comprising electrical connectors on a top side of the substrate and an integrated circuit die coupled to the top side of the substrate. The integrated circuit die includes metal pillars extending from a bottom side of the die facing the top side of the substrate, and the metal pillars of the integrated circuit die are electrically connected to the electrical connectors of the substrate via a liquid metal (e.g., a Gallium-based alloy).

公开(公告)号：US20230178519A1

公开(公告)日：2023-06-08

申请号：US18103227

申请日：2023-01-30

申请人： Google LLC

发明人： Theodore Charles White

IPC分类号： H01L25/065 ,  G06N10/00 ,  H10N69/00 ,  H01L23/48 ,  H01L23/532 ,  H01L23/66 ,  H01L23/00 ,  H01L25/00 ,  H01P7/08

CPC分类号： H01L25/0657 ,  G06N10/00 ,  H10N69/00 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53285 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L25/50 ,  H01P7/086 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2224/81409 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05179 ,  H01L2224/13109 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13179 ,  H01L2224/13183 ,  H01L2924/04941

摘要： A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

公开(公告)号：US20170186627A1

公开(公告)日：2017-06-29

申请号：US15456767

申请日：2017-03-13

申请人： Kulicke and Soffa Industries, Inc.

发明人： Robert N. Chylak ,  Dominick A. DeAngelis ,  Horst Clauberg

IPC分类号： H01L21/449 ,  H01L21/762 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L21/449 ,  H01L21/76251 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/75 ,  H01L24/81 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2021/60195 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13187 ,  H01L2224/136 ,  H01L2224/13687 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75343 ,  H01L2224/75348 ,  H01L2224/75349 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81355 ,  H01L2224/81409 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/81906 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20301 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/8121 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/81 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0503 ,  H01L2924/01013 ,  H01L2924/0504 ,  H01L2924/0105 ,  H01L2924/0502 ,  H01L2924/0103 ,  H01L2924/0494 ,  H01L2924/0104 ,  H01L2924/0495 ,  H01L2924/01023 ,  H01L2924/0496 ,  H01L2924/01024 ,  H01L2924/05 ,  H01L2924/01028 ,  H01L2924/0543 ,  H01L2924/0544 ,  H01L2924/0542 ,  H01L2924/0534 ,  H01L2924/0535 ,  H01L2924/0536 ,  H01L2924/054 ,  H01L2924/0463 ,  H01L2924/0464 ,  H01L2924/0462 ,  H01L2924/0454 ,  H01L2924/0455 ,  H01L2924/0456 ,  H01L2924/046 ,  H01L2924/01105

摘要： A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.

公开(公告)号：US09461008B2

公开(公告)日：2016-10-04

申请号：US13787444

申请日：2013-03-06

申请人： QUALCOMM Incorporated

发明人： Rajneesh Kumar ,  Omar J. Bchir

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H05K3/34 ,  H01L23/14

CPC分类号： H01L24/13 ,  H01L21/4867 ,  H01L23/147 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13006 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/12042 ,  H05K3/3436 ,  H05K3/3468 ,  H05K3/3484 ,  H05K2201/10674 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A solder on trace device includes a conductive trace on a semiconductor substrate surface. The conductive trace has a sidewall and a bonding surface. The solder on trace device also includes a passivation layer on at least one end of the conductive trace. The solder on trace device further includes a pre-solder material on the sidewall and the bonding surface of the conductive trace.

摘要翻译： 迹线装置上的焊料包括在半导体衬底表面上的导电迹线。 导电迹线具有侧壁和接合表面。 跟踪装置上的焊料还包括在导电迹线的至少一端上的钝化层。 跟踪装置上的焊料还包括在侧壁上的预焊料材料和导电迹线的接合表面。

公开(公告)号：US09318453B2

公开(公告)日：2016-04-19

申请号：US14421689

申请日：2013-07-31

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Abdelkader Aliane ,  Romain Coppard ,  Jamal Tallal

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/03 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/145 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02175 ,  H01L2224/0219 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/10156 ,  H01L2224/10175 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11515 ,  H01L2224/11848 ,  H01L2224/13007 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13187 ,  H01L2224/1601 ,  H01L2224/16505 ,  H01L2224/29035 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81121 ,  H01L2224/81192 ,  H01L2224/8123 ,  H01L2224/81409 ,  H01L2224/818 ,  H01L2224/8184 ,  H01L2224/819 ,  H01L2224/81948 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/053 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/20754 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A method of manufacturing a microelectronic device including a first component hybridized with a second component via electric interconnects, involves the steps of: (i) forming the first and second components, the second component being transparent to ultraviolet radiation at least in line with locations provided for the interconnects; (ii) forming interconnection elements including copper oxide on the second component at the locations provided for the interconnects; (iii) placing the first and second components on each other; and (iv) applying the ultraviolet radiation through the second component on the elements including copper oxide to implement an ultraviolet anneal converting copper oxide into copper.

摘要翻译： 制造包括通过电互连与第二部件杂交的第一部件的微电子器件的方法包括以下步骤：（i）形成第一和第二部件，第二部件至少与所提供的位置一致地对紫外线辐射是透明的 用于互连; （ii）在为互连设置的位置处在第二部件上形成包括氧化铜的互连元件; （iii）将第一和第二组分彼此放置; 和（iv）通过第二组分将紫外线辐射施加到包括氧化铜的元件上，以实现将铜氧化物转化为铜的紫外线退火。

公开(公告)号：US20150097285A1

公开(公告)日：2015-04-09

申请号：US14505609

申请日：2014-10-03

申请人： Kulicke and Soffa Industries, Inc.

发明人： Robert N. Chylak ,  Dominick A. DeAngelis

IPC分类号： H01L23/00

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/75 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13624 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75343 ,  H01L2224/75348 ,  H01L2224/75349 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81409 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/818 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/81906 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20301 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/8121 ,  H01L2924/00

摘要： A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

公开(公告)号：US20140210076A1

公开(公告)日：2014-07-31

申请号：US14225963

申请日：2014-03-26

申请人： Commissariat A L'Energie Atomique Et Aux Energies Alternatives

发明人： Abdelkader ALIANE

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L23/49811 ,  H01L21/76885 ,  H01L23/345 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/98 ,  H01L2224/10175 ,  H01L2224/11552 ,  H01L2224/1183 ,  H01L2224/13011 ,  H01L2224/13075 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81234 ,  H01L2224/81238 ,  H01L2224/81385 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/00

摘要： A method of forming a hybridized device including forming a first component provided with metal bumps, and a second component provided with connection elements, attaching the bumps to the connection elements. The manufacturing of the second component includes forming, on a surface of a substrate, resistive elements at the locations provided for the connection elements; depositing an electric insulator layer at least on the resistive elements; and forming the connection elements, each comprising a metal well having an opening capable of receiving the corresponding metal bump of the first microelectronic component and at least partially filled with a fusible element, particularly indium or an alloy of tin and gold, or with a conductive ink, particularly based on silver or copper. Further, the attachment of the balls to the connection elements comprises applying an electric current through the resistive elements to heat the bumps.

摘要翻译： 一种形成杂化装置的方法，包括形成设置有金属凸块的第一部件，以及设置有连接元件的第二部件，将凸块连接到连接元件。 第二部件的制造包括在基板的表面上在为连接元件提供的位置处形成电阻元件; 至少在所述电阻元件上沉积电绝缘体层; 并且形成连接元件，每个连接元件包括具有开口的金属孔，该开口能够接收第一微电子元件的相应的金属凸块，并且至少部分地填充有可熔元件，特别是铟或锡和金的合金，或与导电 油墨，特别是基于银或铜。 此外，将球附接到连接元件包括施加电流通过电阻元件以加热凸块。

公开(公告)号：US08258625B2

公开(公告)日：2012-09-04

申请号：US12061735

申请日：2008-04-03

申请人： Shinichi Fujiwara

发明人： Shinichi Fujiwara

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/1183 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13019 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/16238 ,  H01L2224/81022 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81207 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81416 ,  H01L2224/81424 ,  H01L2224/81455 ,  H01L2224/8183 ,  H01L2224/831 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： In a structure for connecting a semiconductor element having a fine pitch electrode at 50 μm pitch or less and a pad or wirings on a substrate, for preventing inter-bump short-circuit or fracture of a connected portion due to high strain generated upon heating or application of load during connection, the substrate and the semiconductor element are connected by way of a bump having a longitudinal elastic modulus (Young's modulus) of 65 GPa or more and 600 GPa or less and a buffer layer including one of tin, aluminum, indium, or lead as a main ingredient and, further, protrusions are formed to at least one of opposing surfaces of the bump and the pad or the wirings on the substrate to each other, and the surfaces are connected by ultrasonic waves.

摘要翻译： 在用于连接具有50μm间距以下的细间距电极的半导体元件和衬底上的焊盘或布线的结构中，用于防止由于加热时产生的高应变引起的连接部分的碰撞之间的短路或断裂，或 在连接期间施加负载，衬底和半导体元件通过具有65GPa以上且600GPa以下的纵向弹性模量（杨氏模量）的凸块和包含锡，铝，铟中的一种的缓冲层连接 或铅作为主要成分，并且另外，凸起和焊盘的相对表面或基板上的布线中的至少一个彼此形成突起，并且这些表面通过超声波连接。

公开(公告)号：US20120126418A1

公开(公告)日：2012-05-24

申请号：US12954397

申请日：2010-11-24

申请人： Chien-Te Feng ,  Shih-Chin Lin

发明人： Chien-Te Feng ,  Shih-Chin Lin

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L23/481 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81418 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/8146 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/83385 ,  H01L2224/85409 ,  H01L2224/85411 ,  H01L2224/85413 ,  H01L2224/85416 ,  H01L2224/85418 ,  H01L2224/8542 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85457 ,  H01L2224/8546 ,  H01L2224/85463 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.

摘要翻译： 集成电路（IC）装置包括具有顶侧表面和与顶侧表面相对的底部表面的聚合物基板，从顶侧表面延伸到底部表面的多个通孔，以及多个底部金属焊盘 底部表面定位在多个通孔上。 具有包括多个接合焊盘的活动顶面和第二侧的至少一个IC管芯固定到顶侧表面。 接合特征耦合到多个接合焊盘，用于将多个接合焊盘中的相应接合焊盘连接到多个底部金属焊盘。 接合特征延伸到通孔中以接触底部金属焊盘。

公开(公告)号：US20020100986A1

公开(公告)日：2002-08-01

申请号：US10104826

申请日：2002-03-22

申请人： Hitachi, Ltd.

发明人： Tasao Soga ,  Hanae Shimokawa ,  Tetsuya Nakatsuka ,  Kazuma Miura ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L029/40 ,  H01L023/52 ,  H01L023/48

CPC分类号： H01L24/13 ,  B32B15/01 ,  C22C5/02 ,  C22C9/02 ,  C22C11/06 ,  C22C13/00 ,  H01L21/50 ,  H01L21/56 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/4924 ,  H01L23/49513 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L25/16 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81054 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81409 ,  H01L2224/81815 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/045 ,  H05K2201/09572 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

摘要翻译： 形成在半导体器件和衬底之间的接合部包括Cu等的金属球，Sn和金属球的化合物以及金属球通过化合物结合在一起。