Projection lens for a microlithographic projection exposure apparatus
    11.
    发明申请
    Projection lens for a microlithographic projection exposure apparatus 失效
    用于微光刻投影曝光装置的投影透镜

    公开(公告)号:US20050018312A1

    公开(公告)日:2005-01-27

    申请号:US10878611

    申请日:2004-06-29

    摘要: A projection lens (10) for a microlithographic projection exposure apparatus has a first optical element, for example a birefringent lens (L2), that has polarization dependent properties causing intensity fluctuations in an image plane of the projection lens. These fluctuation may be produced by a second optical element (24), for example a polarization selective beam splitting layer (28), that is arranged downstream of the first optical element. A gray filter (32; 132; 232) disposed in the beam path reduces the intensity fluctuations.

    摘要翻译: 用于微光刻投影曝光装置的投影透镜(10)具有第一光学元件(例如双折射透镜(L2)),其具有导致投影透镜的图像平面中的强度波动的偏振相关特性。 这些波动可以由布置在第一光学元件下游的第二光学元件(24)产生,例如偏振选择分束层(28)。 设置在光束路径中的灰色滤光器(32; 132; 232)减小了强度波动。

    REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE
    12.
    发明申请
    REFLECTIVE OPTICAL ELEMENT AND EUV LITHOGRAPHY APPLIANCE 有权
    反射光学元件和EUV光刻设备

    公开(公告)号:US20090251772A1

    公开(公告)日:2009-10-08

    申请号:US12399775

    申请日:2009-03-06

    IPC分类号: G02B5/00

    摘要: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

    摘要翻译: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备,该器具显示出低的污染倾向。 根据本发明,反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间,或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

    Catoptric Objectives And Systems Using Catoptric Objectives
    14.
    发明申请
    Catoptric Objectives And Systems Using Catoptric Objectives 有权
    使用图解目标的图解目标和系统

    公开(公告)号:US20100134908A1

    公开(公告)日:2010-06-03

    申请号:US12700169

    申请日:2010-02-04

    IPC分类号: G02B5/10

    摘要: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

    摘要翻译: 通常,在一个方面,本发明的特征在于设置成将从物体平面到图像平面的辐射成像的目标,包括布置成将来自物体平面的辐射引导到图像平面的多个元件,其中物镜具有图像 侧面数值孔径大于0.55,最大像侧场尺寸大于1 mm,目标是一个反射目标。

    Catoptric objectives and systems using catoptric objectives
    15.
    发明授权
    Catoptric objectives and systems using catoptric objectives 失效
    使用反射目标的目标和系统

    公开(公告)号:US07682031B2

    公开(公告)日:2010-03-23

    申请号:US11317851

    申请日:2005-12-22

    IPC分类号: G02B5/10

    摘要: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

    摘要翻译: 通常,在一个方面,本发明的特征在于设置成将从物体平面到图像平面的辐射成像的目标,包括布置成将来自物体平面的辐射引导到图像平面的多个元件,其中物镜具有图像 侧面数值孔径大于0.55,最大像侧场尺寸大于1 mm,目标是一个反射目标。

    Groupwise corrected objective
    16.
    发明授权
    Groupwise corrected objective 有权
    分组校正目标

    公开(公告)号:US07576934B2

    公开(公告)日:2009-08-18

    申请号:US11656878

    申请日:2007-01-23

    IPC分类号: G02B27/00

    摘要: An objective and method of fabricating an objective, particularly a projection objective for microlithography, comprising a plurality of optical elements. In one example, the method comprises acts of determining groups of optically similar optical elements or surfaces having at least two members, determining wave front deformations by the optical elements or surfaces, determining the necessary corrections for the optical elements or surfaces of a group, and performing the corrections for a group at a group member.

    摘要翻译: 一种制造物镜的目的和方法,特别是用于微光刻的投影物镜,其包括多个光学元件。 在一个示例中,该方法包括确定具有至少两个构件的光学相似的光学元件或表面的组的动作,确定光学元件或表面的波前变形,确定组的光学元件或表面的必要校正,以及执行 一个团体成员的一个组的更正。

    CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES
    19.
    发明申请
    CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES 审中-公开
    使用目标目标的CATOPR目标和系统

    公开(公告)号:US20080316451A1

    公开(公告)日:2008-12-25

    申请号:US12198344

    申请日:2008-08-26

    IPC分类号: G03F7/20

    摘要: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

    摘要翻译: 通常,在一个方面,本发明的特征在于设置成将从物体平面到图像平面的辐射成像的目标,包括布置成将来自物体平面的辐射引导到图像平面的多个元件,其中物镜具有图像 侧面数值孔径大于0.55,最大像侧场尺寸大于1 mm,目标是一个反射目标。

    Projection Lens for a Microlithographic Projection Exposure Apparatus
    20.
    发明申请
    Projection Lens for a Microlithographic Projection Exposure Apparatus 审中-公开
    用于微光刻投影曝光装置的投影透镜

    公开(公告)号:US20070188729A1

    公开(公告)日:2007-08-16

    申请号:US11738935

    申请日:2007-04-23

    IPC分类号: G03B27/54

    摘要: A projection lens for a EUV microlithographic projection exposure apparatus comprises a diaphragm (BL) which is arranged at a distance (D) in front of a mirror (S2) of the lens. The diaphragm (BL) has a non-round aperture with an edge contour that may be configured such two rays of a light bundle disposed symmetrically with respect to a chief ray are treated equally, i.e. either both rays pass through the diaphragm aperture or both are blocked by the diaphragm.

    摘要翻译: 用于EUV微光刻投影曝光装置的投影透镜包括在透镜的反射镜(S 2)的前方设置有距离(D)的光阑(BL)。 隔膜(BL)具有非圆形孔口,其边缘轮廓可以被配置为相对于主射线对称设置的两束光束被均等地对待,即两条光线通过隔膜孔径或两者都是 被隔膜封闭