公开(公告)号：US20130155484A1

公开(公告)日：2013-06-20

申请号：US13327298

申请日：2011-12-15

申请人： LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

发明人： LUKE SWEATLOCK ,  Kenneth Diest ,  James Ma ,  Vladan Jankovic ,  Imogen Pryce ,  Ryan Briggs ,  Harry Atwater

IPC分类号： G02F1/09 ,  C23F1/00

CPC分类号： B82Y20/00 ,  G02F1/0147 ,  G02F1/065 ,  G02F1/23 ,  G02F2203/10

摘要： Systems and methods are provided for modulating light of a wavelength of interest. The modulator assembly includes a plasmonic layer that supports surface plasmon polaritons at the wavelength of interest and a layer of solid-state phase change material having a first phase in which it is substantially transparent to light of the wavelength of interest and a second phase in which it is substantially opaque to light of the wavelength of interest. A control mechanism is configured to alter the phase of the solid-state phase change material between the first phase and the second phase. Each of the plasmonic layer and the layer of solid-state phase change material are configured as to provide a plasmonic mode of transmission for light of the wavelength of interest.

摘要翻译： 提供了用于调制感兴趣波长的光的系统和方法。 调制器组件包括等离子体激元层，其支持感兴趣波长的表面等离子体激元和具有第一相的固态相变材料层，其中其对于感兴趣的波长的光基本上是透明的，其中第二相 对感兴趣的波长的光基本上是不透明的。 控制机构被配置为改变第一相和第二相之间的固态相变材料的相位。 等离子体激元层和固态相变材料层中的每一个被配置为为感兴趣的波长的光提供等离子体激发传输模式。

公开(公告)号：US20130098289A1

公开(公告)日：2013-04-25

申请号：US13444645

申请日：2012-04-11

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC分类号： C30B25/12 ,  C30B25/10 ,  C30B25/18 ,  C30B25/14 ,  C30B25/08 ,  C30B25/02

CPC分类号： C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

公开(公告)号：US20100126570A1

公开(公告)日：2010-05-27

申请号：US12605129

申请日：2009-10-23

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/0735 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

公开(公告)号：US20060030131A1

公开(公告)日：2006-02-09

申请号：US10974390

申请日：2004-10-26

申请人： Christine Richardson ,  Harry Atwater

发明人： Christine Richardson ,  Harry Atwater

IPC分类号： H01L21/20

CPC分类号： C30B1/023 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672

摘要： The present invention provides methods of manufacturing of silicon in substantially crystalline form out of amorphous silicon.

公开(公告)号：US08937244B2

公开(公告)日：2015-01-20

申请号：US12605108

申请日：2009-10-23

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/00 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/0735

CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

公开(公告)号：US08602707B2

公开(公告)日：2013-12-10

申请号：US12475169

申请日：2009-05-29

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC分类号： H01L21/677

CPC分类号： C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.

摘要翻译： 本发明的实施方案一般涉及悬浮底物载体或载体。 在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。 在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。 每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。 在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及 沿着处理室内的路径移动衬底载体。

公开(公告)号：US20090321885A1

公开(公告)日：2009-12-31

申请号：US12475411

申请日：2009-05-29

申请人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

发明人： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料， 并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。 该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

公开(公告)号：US20090015906A1

公开(公告)日：2009-01-15

申请号：US11750596

申请日：2007-05-18

申请人： Lionel C. Kimerling ,  Harry Atwater ,  Mark L. Brongersma ,  Luca Dal Negro ,  Thomas L. Koch ,  Philippe Fauchet ,  Michal Lipson ,  Jurgen Michel

发明人： Lionel C. Kimerling ,  Harry Atwater ,  Mark L. Brongersma ,  Luca Dal Negro ,  Thomas L. Koch ,  Philippe Fauchet ,  Michal Lipson ,  Jurgen Michel

IPC分类号： H01S3/14

CPC分类号： H01S3/0632 ,  H01S3/0637 ,  H01S3/083 ,  H01S3/09 ,  H01S3/1608 ,  H01S3/169 ,  H01S3/176 ,  H01S3/2308

摘要： An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

摘要翻译： 硅平台上的光放大器包括第一掺杂器件层和第二掺杂器件层。 增益介质位于第一和第二掺杂器件层之间。 增益介质包括外部增益材料，以便基本上将增益介质中的光信号限制在光电放大器中，并允许光放大器被电或光泵浦。

公开(公告)号：US20060108688A1

公开(公告)日：2006-05-25

申请号：US11274197

申请日：2005-11-16

申请人： Christine Richardson ,  Harry Atwater

发明人： Christine Richardson ,  Harry Atwater

IPC分类号： H01L23/48

CPC分类号： H01L31/1804 ,  H01L31/1872 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A silicon structure includes a selective nucleating single phase epitaxial (SNSPE) template polysilicon layer containing crystallization catalyst residue, and a hot wire chemical vapor deposited (HWCVD) epitaxial polysilicon layer epitaxially grown on said template layer. The silicon structure may satisfy at least one of the following: 1) a thickness of the SNSPE template layer is less that about 60 nm; 2) a thickness of the HPCVD layer is greater than about 60 nm. The silicon structure may be used in a polysilicon solar cell or other solid state devices. A method of making a polysilicon layer includes providing a first layer comprising an amorphous silicon or a polysilicon layer containing a crystallization catalyst or in contact with a crystallization catalyst, and annealing the first layer in a silicon containing atmosphere to at least partially crystallize the first layer.

摘要翻译： 硅结构包括含有结晶催化剂残余物的选择性成核单相外延（SNSPE）模板多晶硅层和在所述模板层上外延生长的热丝化学气相沉积（HWCVD）外延多晶硅层。 硅结构可以满足以下至少一个：1）SNSPE模板层的厚度小于约60nm; 2）HPCVD层的厚度大于约60nm。 硅结构可以用于多晶硅太阳能电池或其他固态器件中。 一种制造多晶硅层的方法包括提供包含非晶硅或含有结晶催化剂或与结晶催化剂接触的多晶硅层的第一层，并且在含硅气氛中对第一层进行退火以至少部分地使第一层 。

公开(公告)号：US20050247924A1

公开(公告)日：2005-11-10

申请号：US11100807

申请日：2005-04-06

申请人： Harry Atwater ,  Robert Walters

发明人： Harry Atwater ,  Robert Walters

IPC分类号： H01L29/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/16

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/0004 ,  H01L33/0041 ,  H01L33/08 ,  Y10S977/95

摘要： A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.

摘要翻译： 一种发光器件，包括形成在半导体衬底上的晶体管结构。 晶体管结构具有源极区，漏极区，源区和漏区之间的沟道区以及沟道区上的栅极氧化物。 该发光器件包括嵌入栅极氧化物中的多个纳米晶体，以及由栅极氧化物上形成的半透明或透明材料制成的栅极接触。 纳米晶体适于首先带有第一类型的电荷载体，然后提供第二类型的载流子，使得第一和第二类型的载流子形成用于发光的激子。