摘要:
A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要:
Disclosed is a semiconductor device (e.g., nonvolatile semiconductor memory device) and method of forming the device. The device includes a gate electrode (e.g., floating gate electrode) having a first layer of an amorphous silicon film, or a polycrystalline silicon thin film or a film of a combination of amorphous and polycrystalline silicon, on the gate insulating film. Where the film includes polycrystalline silicon, the thickness of the film is less than 10 nm. A thicker polycrystalline silicon film can be provided on or overlying the first layer. The memory device can increase the write/erase current significantly without increasing the low electric field leakage current after application of stresses, which in turn reduces write/erase time substantially. In forming the semiconductor device, a thin amorphous or polycrystalline silicon film can be provided on the gate insulating film, and a thin insulating film provided on the amorphous silicon film, with a thicker polycrystalline silicon film provided on or overlying the thin insulating film. Where the thin silicon film is amorphous silicon, it can then be polycrystallized, although it need not be. Also disclosed is a technique for selective crystallization of amorphous silicon layers, based upon layer thickness.
摘要:
Disclosed is a semiconductor device (e.g., nonvolatile semiconductor memory device) and method of forming the device. The device includes a gate electrode (e.g., floating gate electrode) having a first layer of an amorphous silicon film, or a polycrystalline silicon thin film or a film of a combination of amorphous and polycrystalline silicon, on the gate insulating film. Where the film includes polycrystalline silicon, the thickness of the film is less than 10 nm. A thicker polycrystalline silicon film can be provided on or overlying the first layer. The memory device can increase the write/erase current significantly without increasing the low electric field leakage current after application of stresses, which in turn reduces write/erase time substantially. In forming the semiconductor device, a thin amorphous or polycrystalline silicon film can be provided on the gate insulating film, and a thin insulating film provided on the amorphous silicon film, with a thicker polycrystalline silicon film provided on or overlying the thin insulating film. Where the thin silicon film is amorphous silicon, it can then be polycrystallized, although it need not be. Also disclosed is a technique for selective crystallization of amorphous silicon layers, based upon layer thickness.
摘要:
Disclosed is a semiconductor device including a charge storage capacitor having a storage electrode which is electrically connected to a switching transistor through a contact hole provided in an insulator and which has a greater film thickness than the radius of the contact hole, at least a part of the storage electrode being disposed above a data line. It is possible to reduce the memory cell area while preventing lowering in the capacitance, and thus realize high density and high integration of semiconductor devices.
摘要:
A device isolation region is made of a silicon oxide film embedded in a trench, an upper portion thereof is protruded from a semiconductor substrate, and a sidewall insulating film made of silicon nitride or silicon oxynitride is formed on a sidewall of a portion of the device isolation region which is protruded from the semiconductor substrate. A gate insulating film of a MISFET is made of an Hf-containing insulating film containing hafnium, oxygen and an element for threshold reduction as main components, and a gate electrode that is a metal gate electrode extends on an active region, the sidewall insulating film and the device isolation region. The element for threshold reduction is a rare earth or Mg when the MISFET is an n-channel MISFET, and the element for threshold reduction is Al, Ti or Ta when the MISFET is a p-channel MISFET.
摘要:
A p-type MIS transistor Qp arranged in a pMIS region Rp of a silicon substrate 1 includes a pMIS gate electrode GEp formed so as to interpose a pMIS gate insulating film GIp formed of a first insulating film z1 and a first high-dielectric film hk1, and an n-type MIS transistor Qn arranged in an nMIS region Rn includes an nMIS gate electrode GEn formed so as to interpose an nMIS gate insulating film GIn formed of a first insulating film z1 and a second high-dielectric film hk2. The first high-dielectric film hk1 is formed of an insulating film mainly made of hafnium and oxygen with containing aluminum, titanium, or tantalum. Also, the second high-dielectric film hk2 is formed of an insulating film mainly made of hafnium, silicon, and oxygen with containing an element of any of group Ia, group IIa, and group IIIa.
摘要:
A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film.
摘要:
There is provided a semiconductor device configured as follows. On a semiconductor substrate, a titanium oxide film which is an insulating film having a higher dielectric constant than that of a silicon dioxide film is formed as a gate insulating film, and a gate electrode is disposed thereon, resulting in a field effect transistor. The end portions in the gate length direction of the titanium oxide film are positioned inwardly from the respective end portions on the source side and on the drain side of the gate electrode, and the end portions of the titanium oxide film are positioned in a region in which the gate electrode overlaps with the source region and the drain region in plan configuration. This semiconductor device operates at a high speed, and is excellent in short channel characteristics and driving current. Further, in the semiconductor device, the amount of metallic elements introduced into a silicon substrate is small.
摘要:
A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
摘要:
Disclosed is a semiconductor device (e.g., nonvolatile semiconductor memory device) and method of forming the device. The device includes a gate electrode (e.g., floating gate electrode) having a first layer of an amorphous silicon film, or a polycrystalline silicon thin film or a film of a combination of amorphous and polycrystalline silicon, on the gate insulating film. Where the film includes polycrystalline silicon, the thickness of the film is less than 10 nm. A thicker polycrystalline silicon film can be provided on or overlying the first layer. The memory device can increase the write/erase current significantly without increasing the low electric field leakage current after application of stresses, which in turn reduces write/erase time substantially. In forming the semiconductor device, a thin amorphous or polycrystalline silicon film can be provided on the gate insulating film, and a thin insulating film provided on the amorphous silicon film, with a thicker polycrystalline silicon film provided on or overlying the thin insulating film. Where the thin silicon film is amorphous silicon, it can then be polycrystallized, although it need not be. Also disclosed is a technique for selective crystallization of amorphous silicon layers, based upon layer thickness.