公开(公告)号：US07041956B2

公开(公告)日：2006-05-09

申请号：US10863654

申请日：2004-06-08

Applicant: Shingo Takahashi ,  Yoshiyuki Enomoto ,  Hideshi Abe

Inventor： Shingo Takahashi ,  Yoshiyuki Enomoto ,  Hideshi Abe

IPC: H01L27/00

CPC classification number: H01L27/14629 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14656

Abstract: A solid-state image pickup device 100 is constructed in which a waveguide 15 is formed in an insulating layer on a light-receiving sensor portion 2, a side wall 161 of the waveguide 15 is covered with a reflective film 17 made of an Al film deposited by a CVD method, an underlayer film 19 is formed between the reflective film 17 and the side wall 161 of the waveguide 15 and the underlayer film 19 is made of a VIb-group element. It is possible to obtain a solid-state image pickup device including a waveguide in which hydrogen supplied to the light-receiving sensor portion 2 can be restrained from being absorbed by the underlayer film 19 and which has the reflective film 17 of high reflectivity with satisfactory surface condition, satisfactory coverage and excellent adhesion.

Abstract translation: 构成了在光接收传感器部分2上的绝缘层中形成波导15的固态图像拾取装置100，波导15的侧壁161被由Al膜制成的反射膜17覆盖 通过CVD法沉积，在反射膜17和波导15的侧壁161之间形成下层膜19，下层膜19由VIb族元素构成。 可以获得包括波导的固态图像拾取装置，其中可以抑制供应到光接收传感器部分2的氢被下层膜19吸收，并且反射率高的反射膜17具有令人满意的 表面状况好，覆盖性好，附着力好。

公开(公告)号：US20060065896A1

公开(公告)日：2006-03-30

申请号：US11231918

申请日：2005-09-21

Applicant: Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

Inventor： Hideshi Abe ,  Keiji Tatani ,  Kazuichiro Itonaga

IPC: H01L29/76

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: In a CMOS solid-state imaging device, to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels 2A and 2B are separated by element isolation portion 82 formed of a diffusion layer 43 and an insulating layer 44 thereon, and the insulating layer 44 of the element isolation portion 82 is formed in a position equal to or shallower than the position 45j of a pn junction on the side of accumulation layer 39 of a photoelectric conversion portion constituting a pixel.

Abstract translation: 在CMOS固态成像装置中，抑制由像素缺陷引起的白点和暗电流的发生，并且还增加饱和信号量。

公开(公告)号：US06867438B1

公开(公告)日：2005-03-15

申请号：US09268339

申请日：1999-03-16

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L31/0224 ,  H04N5/335 ,  H04N5/341 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3722 ,  H01L31/0328

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在用于进行光电转换的基板（21）的表层部分上的光接收传感器部分，用于传送从光接收读出的信号电荷的电荷转移部分 传感器部分，通过绝缘膜（26）在大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成的互连到互连 电极（27）（28）。 通过选择性地沉积具有比多晶硅的电阻值低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在转移电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。

公开(公告)号：US06246081B1

公开(公告)日：2001-06-12

申请号：US09113171

申请日：1998-07-10

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L31062

CPC classification number: H01L27/14627 ,  H01L27/14601 ,  H01L27/14818

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film. The light-impervious film has a lower overhang formed on the bottom edge of the side surface of the first light-impervious film, an upper overhang formed on the top edge of the side surface of the second light-impervious film, and the focus point P of the on-chip lens designed to be at a position with a height equal to the tip of the upper overhang directly above the sensor.

公开(公告)号：US5581099A

公开(公告)日：1996-12-03

申请号：US464094

申请日：1995-06-05

Applicant: Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

Inventor： Takahisa Kusaka ,  Hideo Kanbe ,  Akio Izumi ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Asai

IPC: H01L27/148 ,  H01L31/0288 ,  H01L31/103 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/367 ,  H04N5/369 ,  H04N5/372 ,  H01L29/768

CPC classification number: H01L31/103 ,  H01L27/14831 ,  H01L31/0288 ,  Y02E10/50 ,  Y10S438/909

Abstract: In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Abstract translation: 在CCD固体摄像装置中，其中感光部分由在第一P型阱区域和形成在N型硅衬底上的N型杂质扩散区域之间的PN结形成的光电二极管构成，N 型杂质扩散区通过离子注入单一砷（As）形成。 根据该CCD固体摄像装置，可以减少图像感测画面上的亮度缺陷，这是图像感测画面遇到的缺陷之一。 此外，构成PN结的n型杂质扩散区域的尺寸可以减小，并且可以使CCD固态图像感测装置本身尺寸更小。 此外，还提供了一种制造CCD固态图像感测装置的方法。

公开(公告)号：US08138065B2

公开(公告)日：2012-03-20

申请号：US13163181

申请日：2011-06-17

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L21/30

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

公开(公告)号：US07985614B2

公开(公告)日：2011-07-26

申请号：US12548918

申请日：2009-08-27

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L21/00

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

公开(公告)号：US07981769B2

公开(公告)日：2011-07-19

申请号：US12548907

申请日：2009-08-27

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L21/30

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

公开(公告)号：US07928487B2

公开(公告)日：2011-04-19

申请号：US12200424

申请日：2008-08-28

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract translation: 具有用于读取信号电荷的电极的固态成像装置设置在构成像素的光接收传感器部分的一侧; 施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜的预定电压信号; 形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心的第二导电型半导体区域; 以及在电极侧的端部的第一导电型半导体区域的表面上形成的第二导电型半导体区域的杂质浓度低于位于第一导电型半导体区域 像素分离区域。

公开(公告)号：US07714915B2

公开(公告)日：2010-05-11

申请号：US11298063

申请日：2005-12-09

Applicant: Hiroki Endo ,  Hideshi Abe

Inventor： Hiroki Endo ,  Hideshi Abe

IPC: H04N9/083 ,  H04N5/335 ,  H04N3/14 ,  H01L31/062 ,  H01L27/00

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14647 ,  H04N9/045 ,  H04N2209/045

Abstract: A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.

Abstract translation: 提供一种具有半导体衬底的固态图像器件，每个像素A包含其中在半导体衬底的深度方向上提供至少两个PN结部分的光电转换部分，每个像素B包含光电转换部分 提供至少一个PN结部分，设置在像素A上方的第一滤色器，设置在像素B上方的第二滤色器; 以及用于从每个像素A的两个PN结部分检测第一颜色信号和第二颜色信号的检测机构，以及来自每个像素B的PN结部分的第三颜色信号。根据上述固体 - 可以比滤色器分离方法更有效地使用光，并且可以实现与三孔结构的颜色再现性优异的颜色再现性。