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    Heat-resistive catalyst and production method thereof
    11.
    发明申请
    Heat-resistive catalyst and production method thereof 审中-公开
    耐热催化剂及其制备方法

    公开(公告)号：US20070167319A1

    公开(公告)日：2007-07-19

    申请号：US10584346

    申请日：2004-12-02

    Applicant: Kazuyuki Shiratori ,  Katsuo Suga ,  Masanori Nakamura ,  Hironori Wakamatsu ,  Hirofumi Yasuda

    Inventor： Kazuyuki Shiratori ,  Katsuo Suga ,  Masanori Nakamura ,  Hironori Wakamatsu ,  Hirofumi Yasuda

    IPC: B01J23/00 ,  B01J21/00

    CPC classification number: B01J23/38 ,  B01J23/56 ,  B01J23/89 ,  B01J23/8913 ,  B01J23/892 ,  B01J23/894 ,  B01J35/0013 ,  B01J35/04 ,  B01J37/16 ,  B82Y30/00

    Abstract: A high heat-resistive catalyser formed as a catalyst including a composite particle composed of a noble metal particle and a co-catalytic metal compound particle contacting, as a metal or as an oxide, with the noble metal particle, and a substrate carrying the noble metal particle and the co-catalytic metal compound particle, is produced by having a noble metal salt aqueous solution and a co-catalytic metal salt aqueous solution concurrently provided in a reverse micelle preparing reverse micellar solution containing a noble metal precursor and a co-catalytic metal precursor, and having a substrate carrying a composite particle comprising the noble metal precursor and the co-catalytic metal precursor concurrently reduced as a noble metal particle and a co-catalytic metal particle, respectively.

    Abstract translation: 作为催化剂形成的高耐热性催化剂，其包括由贵金属颗粒和作为金属或氧化物与贵金属颗粒接触的助催化金属化合物颗粒构成的复合颗粒和承载贵金属颗粒的基材 金属颗粒和助催化金属化合物颗粒通过在反胶束中同时提供贵金属盐水溶液和助催化金属盐水溶液来制备，所述反胶束制备含有贵金属前体和助催化剂的反胶束溶液 金属前体，并且具有携带包含贵金属前体和助催化金属前体的复合颗粒的基材分别作为贵金属颗粒和共催化金属颗粒同时还原。

    Circuit electron emission element, method of manufacturing electron emission element, image display device, and electronic apparatus
    12.
    发明申请
    Circuit electron emission element, method of manufacturing electron emission element, image display device, and electronic apparatus 审中-公开
    电路电子发射元件，制造电子发射元件的方法，图像显示装置和电子设备

    公开(公告)号：US20060170322A1

    公开(公告)日：2006-08-03

    申请号：US11319076

    申请日：2005-12-27

    Applicant: Hirofumi Yasuda

    Inventor： Hirofumi Yasuda

    IPC: H01J9/02

    CPC classification number: H01J1/316 ,  H01J9/027

    Abstract: An electron emission element includes: a pair of electrodes facing each other with a predetermined gap therebetween; a conductive thin film which bridges across the electrodes and has a narrow region in which a part of at least one side of two sides of an area bridging across the electrodes is close to the other side; and an electron emission section formed in the narrow region of the conductive thin film. In here, the narrow region is narrower than the width between the electrodes in a direction orthogonal to a direction where the electrodes face each other.

    Abstract translation: 电子发射元件包括：一对彼此面对的预定间隙的电极; 导电薄膜，其横跨电极桥接，并且具有窄区域，其中桥接跨越电极的区域的两侧的至少一侧的一部分靠近另一侧; 以及形成在导电薄膜的窄区域中的电子发射部分。 在这里，窄区域比与电极彼此面对的方向正交的方向上的电极之间的宽度窄。

    Catalyst powder, exhaust gas purifying catalyst, and method of producing the catalyst powder
    17.
    发明申请
    Catalyst powder, exhaust gas purifying catalyst, and method of producing the catalyst powder 失效
    催化剂粉末，废气净化催化剂，以及催化剂粉末的制造方法

    公开(公告)号：US20070155626A1

    公开(公告)日：2007-07-05

    申请号：US10586533

    申请日：2005-02-08

    Applicant: Hirofumi Yasuda ,  Katsuo Suga ,  Masanori Nakamura ,  Hironori Wakamatsu ,  Kazuyuki Shiratori ,  Toru Sekiba

    Inventor： Hirofumi Yasuda ,  Katsuo Suga ,  Masanori Nakamura ,  Hironori Wakamatsu ,  Kazuyuki Shiratori ,  Toru Sekiba

    IPC: B01J23/38

    CPC classification number: B01J35/0013 ,  B01D53/945 ,  B01J23/66 ,  B01J23/8906 ,  B01J23/8913 ,  B01J23/8933 ,  B01J23/894 ,  B01J35/006 ,  B01J35/0066 ,  B01J37/0072 ,  B01J37/033 ,  B01J37/16 ,  Y02T10/22

    Abstract: A method of producing catalyst powder of the present invention has a step of precipitating any one of a noble metal particle (5) and a transition metal particle (10) in a reversed micelle (1); a step of precipitating, in the reversed micelle (1) in which any one of the noble metal particle (5) and the transition metal particle (10) is precipitated, a porous support material (7) which supports the noble metal particle (5) and the transition metal particle (10); and a step of precipitating the other of the noble metal particle (5) and the transition metal particle (10) in the reversed micelle (1) in which any one of the noble metal particle (5) and the transition metal particle (10) is precipitated. By this method, it is possible to obtain catalyst powder capable of maintaining initial purification performance thereof even if being exposed to the high temperature.

    Abstract translation: 本发明的催化剂粉末的制造方法具有使反胶束（1）中的贵金属粒子（5）和过渡金属粒子（10）中的任一种析出的工序。 在贵金属粒子（5）和过渡金属粒子（10）中的任何一个析出的反胶束（1）中析出支撑贵金属粒子（5）的多孔性支撑体（7）的步骤 ）和过渡金属颗粒（10）; 以及使贵金属粒子（5）和过渡金属粒子（10）中的任何一个的反胶束（1）中的另一方的析出贵金属粒子（5）和过渡金属粒子（10） 沉淀。 通过该方法，即使暴露于高温也能够得到能够保持其初始净化性能的催化剂粉末。

    Semiconductor device having an inter-layer insulating film disposed between two wiring layers
    19.
    发明授权
    Semiconductor device having an inter-layer insulating film disposed between two wiring layers 失效
    具有在两个布线层之间处理的隔层绝缘膜的半导体器件

    公开(公告)号：US5191402A

    公开(公告)日：1993-03-02

    申请号：US531672

    申请日：1990-06-01

    Applicant: Toshihiko Kondo ,  Kazuo Tanaka ,  Hirofumi Yasuda

    Inventor： Toshihiko Kondo ,  Kazuo Tanaka ,  Hirofumi Yasuda

    IPC: G11C17/12 ,  H01L21/768 ,  H01L23/532 ,  H01L27/112 ,  H01L29/423

    CPC classification number: H01L29/4232 ,  G11C17/12 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L23/53223 ,  H01L23/53271 ,  H01L27/112 ,  H01L2924/0002

    Abstract: A semiconductor device includes a substrate, first insulating film carried on the substrate, first wiring layer carried on the first insulating film and an interlayer insulating film overlying the first wiring layer and first insulating film. The interlayer insulating film has a top portion overlying the first wiring layer and a pair of sidewall portions. The sidewall portions of the interlayer insulating film overlie the first insulating film and the sides of the first wiring layer. The sidewall portions have progressively increasing width in progressing towards the substrate. The device also includes a second wiring layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate adjacent to the first insulating film.

    Abstract translation: 半导体器件包括：衬底，承载在衬底上的第一绝缘膜，承载在第一绝缘膜上的第一布线层和覆盖第一布线层和第一绝缘膜的层间绝缘膜。 层间绝缘膜具有覆盖第一布线层的顶部和一对侧壁部分。 层间绝缘膜的侧壁部分覆盖第一绝缘膜和第一布线层的侧面。 侧壁部分朝着衬底进行逐渐增加的宽度。 该器件还包括第二布线层，其从层间绝缘膜的顶部的覆盖部分延伸到邻近第一绝缘膜的基板的暴露部分并与之接触。

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