Semiconductor device having an inter-layer insulating film disposed
between two wiring layers
    7.
    发明授权
    Semiconductor device having an inter-layer insulating film disposed between two wiring layers 失效
    半导体器件具有布置在两个布线层之间的层间绝缘膜

    公开(公告)号:US5612557A

    公开(公告)日:1997-03-18

    申请号:US487352

    申请日:1995-06-07

    Abstract: A semiconductor device includes a substrate, a first insulating film carried on the substrate, a first conductor layer having sides and carried on the first insulting film, and an interlayer insulating film overlying the first conductor layer and the first insulating film. The interlayer insulating film includes a top portion which overlies the first conductor layer and a pair of sidewall portions which overlie the first insulating film and are adjacent to and in contact with the sides of the first conductor layer. The semiconductor also includes a second conductor layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate and adjacent the first insulating film wherein a portion of the second conductor layer is in contact with a thinned portion of the interlayer insulating film.

    Abstract translation: 半导体器件包括:基板,承载在基板上的第一绝缘膜,具有侧面并承载在第一绝缘膜上的第一导体层,以及覆盖第一导体层和第一绝缘膜的层间绝缘膜。 层间绝缘膜包括覆盖第一导体层的顶部和与第一绝缘膜相邻并且与第一导体层的侧面相邻并与其接触的一对侧壁部分。 该半导体还包括第二导体层,该第二导体层从层间绝缘膜的顶部的覆盖部分延伸并与衬底的暴露部分接触并且与第一绝缘膜相邻,其中第二导体层的一部分接触 具有层间绝缘膜的薄化部分。

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