公开(公告)号：US20160277437A1

公开(公告)日：2016-09-22

申请号：US15064693

申请日：2016-03-09

申请人： Hiroshi Watanabe

发明人： Hiroshi Watanabe

IPC分类号： H04L29/06 ,  H01L21/02 ,  H01L23/528 ,  G11C16/34 ,  G11C16/08 ,  G11C16/26 ,  G11C16/10 ,  G06F21/44 ,  G11C16/16

CPC分类号： H04L63/1441 ,  G06F21/44 ,  G06F21/73 ,  G06F2221/2129 ,  G09C1/00 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  H01L21/02236 ,  H01L21/02255 ,  H01L23/528 ,  H04L9/3278 ,  H04L63/083 ,  H04L65/1073

摘要： A technology precluding attacks through peripheral devices thefts to a network of electronic appliance, by utilizing physical chip identification devices, is disclosed. The electronic appliance in the network are divided into the peripheral devices and stem servers managing registration information of the peripheral devices, wherein the stem servers serve as central control using software, and the peripheral devices are managed at device-level by having physical chip identification devices, thus the security of the whole network is efficiently reinforced.

摘要翻译： 公开了一种通过利用物理芯片识别装置来防止外围设备窃取电子设备网络的技术的技术。 网络中的电子设备被分成管理外围设备的注册信息的外围设备和干服务器，其中，干服务器用作使用软件的中央控制，并且外围设备通过具有物理芯片识别设备 从而有效地加强了整个网络的安全性。

公开(公告)号：US20150001958A1

公开(公告)日：2015-01-01

申请号：US14377466

申请日：2012-02-09

申请人： Shigeru Abe ,  Yasuyoshi Kaneko ,  Hiroshi Watanabe ,  Tomio Yasuda

发明人： Shigeru Abe ,  Yasuyoshi Kaneko ,  Hiroshi Watanabe ,  Tomio Yasuda

IPC分类号： H02J5/00

CPC分类号： H02J50/12 ,  B60L15/007 ,  B60L50/16 ,  B60L53/12 ,  B60L53/22 ,  B60L53/34 ,  B60L53/36 ,  B60L2210/30 ,  B60L2210/40 ,  H02J7/022 ,  H02J7/025 ,  H02J50/10 ,  H02M3/33584 ,  H02M7/797 ,  Y02T10/645 ,  Y02T10/70 ,  Y02T10/7005 ,  Y02T10/7077 ,  Y02T10/7088 ,  Y02T10/7241 ,  Y02T10/92 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/125 ,  Y02T90/127 ,  Y02T90/14

摘要： An example according to one embodiment includes a first coil and a second coil spaced apart therefrom. The system is supplied with power from a primary-side circuit to a secondary-side circuit and vice versa. The primary-side circuit includes the first coil. The secondary-side circuit includes the second coil. The primary-side circuit connects to a first converter that converts direct current into alternating current and vice versa. The first converter connects to second converter that converts direct current into alternating current and vice versa, and the second converter further connects to a commercial power supply. The secondary-side circuit connects to third converter that converts direct current into alternating current and vice versa, and the third converter further connects to direct current power supply of a moving body. Bidirectional power transfer is performed only by a switching operation of the first converter, the second converter, and the third converter.

摘要翻译： 根据一个实施例的示例包括第一线圈和与其间隔开的第二线圈。 该系统由初级侧电路供电到次级侧电路，反之亦然。 初级侧电路包括第一线圈。 次级侧电路包括第二线圈。 初级侧电路连接到将直流电转换为交流电的第一转换器，反之亦然。 第一转换器连接到将直流转换成交流电的第二转换器，反之亦然，并且第二转换器进一步连接到商用电源。 次级侧电路连接到将直流转换成交流电的第三转换器，反之亦然，第三转换器进一步连接到移动体的直流电源。 仅通过第一转换器，第二转换器和第三转换器的开关操作来执行双向功率传输。

公开(公告)号：US08611972B2

公开(公告)日：2013-12-17

申请号：US12838619

申请日：2010-07-19

申请人： Hirotake Sumi ,  Hiroshi Watanabe

发明人： Hirotake Sumi ,  Hiroshi Watanabe

IPC分类号： H04W88/02

CPC分类号： H01Q1/243 ,  H01Q1/48 ,  H01Q9/16 ,  H01Q9/42 ,  H04M1/0235

摘要： According to one embodiment, a mobile wireless apparatus includes: a first housing; and a second housing configured to be slidably connected to the first housing. The first housing includes: a conductor section; and a conducting member configured comprise a conductive material and to be connected to the conductor section. The second housing includes: a ground circuit; a power feed circuit; a slide member configured to comprise a conductive material, to be connected to the ground circuit, and to be slidably engaged with the first housing; and an unbalanced antenna configured to be connected to the power feed circuit. The conducting member is configured to make contact with the slide member when the first housing is opened with respect to the second housing.

摘要翻译： 根据一个实施例，移动无线设备包括：第一外壳; 以及构造成可滑动地连接到所述第一壳体的第二壳体。 第一壳体包括：导体部分; 并且导电构件构造成包括导电材料并连接到导体部分。 第二壳体包括：接地电路; 供电电路; 滑动构件，其构造成包括导电材料，以连接到接地电路，并且与第一壳体可滑动地接合; 以及被配置为连接到所述馈电电路的不平衡天线。 导电构件被构造成当第一壳体相对于第二壳体打开时与滑动构件接触。

公开(公告)号：US20130288467A1

公开(公告)日：2013-10-31

申请号：US13979564

申请日：2011-06-09

申请人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

发明人： Yuji Ebiike ,  Takahiro Nakatani ,  Hiroshi Watanabe ,  Yoshio Fujii ,  Sunao Aya ,  Yoshiyuki Nakaki ,  Tsuyoshi Kawakami ,  Shuhei Nakata

IPC分类号： H01L21/266

CPC分类号： H01L21/266 ,  H01L21/0465 ,  H01L23/544 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (c) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

摘要翻译： 能够抑制高电场的产生和防止发生电介质击穿的半导体装置及其制造方法。 制造半导体器件的方法包括：（a）制备作为由第一导电类型的碳化硅半导体构成的接地的n +衬底，（b）通过使用抗蚀剂形成围绕n +衬底上的元件区域的凹陷结构 图案，以及（c）通过通过抗蚀剂图案的杂质注入，在凹陷结构的凹槽底表面和凹陷侧表面中形成作为第二导电类型的杂质层的保护环注入层，以及 凹陷结构被杂质层覆盖。

公开(公告)号：US08554491B2

公开(公告)日：2013-10-08

申请号：US13314534

申请日：2011-12-08

申请人： Toshiaki Hisada ,  Hiroshi Kurokawa ,  Nobuhiko Oshida ,  Masafumi Yamamoto ,  Takumi Washio ,  Jun-ichi Okada ,  Hiroshi Watanabe ,  Seiryo Sugiura

发明人： Toshiaki Hisada ,  Hiroshi Kurokawa ,  Nobuhiko Oshida ,  Masafumi Yamamoto ,  Takumi Washio ,  Jun-ichi Okada ,  Hiroshi Watanabe ,  Seiryo Sugiura

IPC分类号： G01N33/50

CPC分类号： G06F19/3437 ,  G06F19/00 ,  G06T11/206 ,  G16H50/50

摘要： A modeling device is disclosed that easily projects characteristic information obtained from an object onto a differently-shaped object, even if the object, from which the characteristic information is obtained, has a complex shape. A modeling device in one embodiment of the present invention includes a virtually electrifying section to calculate an electric potential at a spot in a heart at the time when a predetermined voltage is applied to the heart, and a projecting section to project a fiber orientation onto a heart model created on the basis of shape information that is input to the input section. The projecting section specifies a spot to be a target of projection on the basis of the electric potential obtained by the virtually electrifying section. Use of the electric potential in specifying the spot makes it possible to easily project the fiber orientation onto any heart having complex and various shapes.

摘要翻译： 公开了一种建模装置，即使获得特征信息的对象具有复杂形状，也容易将从对象获得的特征信息投射到不同形状的对象上。 在本发明的一个实施例中的建模装置包括：虚拟带电部分，用于在将预定电压施加到心脏时计算心脏中的点处的电位;以及突出部分，用于将纤维取向投影到 基于输入到输入部分的形状信息创建的心脏模型。 投影部根据实际充电部所得到的电位来指定作为投影对象的点。 在指定斑点时使用电位使得可以容易地将纤维取向投射到具有复杂和各种形状的任何心脏上。

公开(公告)号：US08531140B2

公开(公告)日：2013-09-10

申请号：US13747574

申请日：2013-01-23

申请人： Satoshi Ibori ,  Yoshihiro Uchino ,  Hiroshi Watanabe ,  Masahiro Hiraga

发明人： Satoshi Ibori ,  Yoshihiro Uchino ,  Hiroshi Watanabe ,  Masahiro Hiraga

IPC分类号： H02P3/00

CPC分类号： H02P3/22 ,  H02M1/32 ,  H02M5/458 ,  H02P3/14

摘要： The performance of a power transducer is improved while efficiently using a power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. The user is allowed to set, through an operation panel provided on the power transducer, the resistance value of the regenerative braking resistor for thermally consuming the rotational energy generated during motor deceleration. The power transducer performs the steps of: calculating the current which flows in the regenerative braking circuit from the resistance value setting; obtaining the generation loss of the power semiconductor in the regenerative braking circuit with the calculated current value; and determining the permissible duty factor of the power semiconductor from the obtained generation loss.

摘要翻译： 功率传感器的性能得到改善，同时通过管理设置在功率传感器中的再生制动电路中的功率半导体的允许占空比来有效地使用功率半导体。 允许用户通过设置在功率传感器上的操作面板设置再生制动电阻器的电阻值，用于热消耗电动机减速期间产生的旋转能量。 功率传感器执行以下步骤：从电阻值设定计算在再生制动电路中流动的电流; 以所计算的电流值获得再生制动电路中的功率半导体的发电损失; 以及从所获得的发电损失确定功率半导体的允许占空比。

公开(公告)号：US08519773B2

公开(公告)日：2013-08-27

申请号：US13163110

申请日：2011-06-17

申请人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

发明人： Hiroshi Watanabe ,  Hiroaki Kojima ,  Kazuya Machida

IPC分类号： H03K17/687

CPC分类号： H03K17/04123 ,  H03K17/04206 ,  H03K2217/0018 ,  H03K2217/0054

摘要： A method for switching between first and second voltages is provided. Initially, a first voltage is provided from a first input terminal to an output terminal through a first MOS transistor, and the first MOS transistor is deactivated. A back-gate of a second MOS transistor is shorted to the output terminal in response to the deactivation of the first MOS transistor and after a settling interval, and the second MOS transistor is activated while its back-gate is shorted to the terminal so as to provide a second voltage from a second input terminal to the output terminal.

摘要翻译： 提供了用于在第一和第二电压之间切换的方法。 首先，通过第一MOS晶体管从第一输入端子到输出端子提供第一电压，并且第一MOS晶体管被去激活。 第二MOS晶体管的背栅极响应于第一MOS晶体管的去激活而在稳定间隔之后与输出端短路，并且第二MOS晶体管在其栅极与端子短路的同时被激活，从而 以从第二输入端子向输出端子提供第二电压。

公开(公告)号：US08400362B2

公开(公告)日：2013-03-19

申请号：US12546037

申请日：2009-08-24

申请人： Hiroshi Watanabe

发明人： Hiroshi Watanabe

IPC分类号： H01Q1/24

CPC分类号： H01Q1/243 ,  H01Q7/00 ,  H01Q9/30 ,  H01Q9/40 ,  H01Q21/28 ,  Y10T29/49016

摘要： A radio communication apparatus configured to be used for first radio communication and second radio communication which are different from each other is provided. The radio communication apparatus has a first antenna, a coupling reduction element, a magnetic material sheet and a second antenna. The first antenna is configured to be used for the first radio communication, and is formed by a conductive line wound in a plane like a coil. The coupling reduction element is formed by a plane-shaped conductor, provided almost parallel to the plane of the first antenna, and configured to be put in a condition of electrical floating. The magnetic material sheet is provided between the first antenna and the coupling reduction element. The second antenna is configured to be used for the second radio communication, and is provided close to at least a portion of the first antenna.

摘要翻译： 提供了一种被配置为用于彼此不同的第一无线电通信和第二无线电通信的无线电通信装置。 无线电通信装置具有第一天线，耦合减小元件，磁性材料片和第二天线。 第一天线被配置为用于第一无线电通信，并且由缠绕在类似线圈的平面中的导线形成。 联接减速元件由平面形状的导体形成，该平面形状的导体几乎平行于第一天线的平面，并被构造成处于电浮动状态。 磁性材料板设置在第一天线和耦合减速元件之间。 第二天线被配置为用于第二无线电通信，并且被设置在第一天线的至少一部分附近。

公开(公告)号：US08367536B2

公开(公告)日：2013-02-05

申请号：US13319739

申请日：2010-07-16

申请人： Hiroshi Watanabe ,  Naruhisa Miura

发明人： Hiroshi Watanabe ,  Naruhisa Miura

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068

摘要： The present invention includes steps below: (a) forming, on a drift layer, a first ion implantation mask and a second ion implantation mask individually by photolithography to form a third ion implantation mask, the first ion implantation mask having a mask region corresponding to a channel region and having a first opening corresponding to a source region, the second ion implantation mask being positioned in contact with an outer edge of the first ion implantation mask and configured to form a base region; (b) implanting impurities of a first conductivity type from the first opening with an ion beam using the third ion implantation mask to form a source region in an upper layer part of the silicon carbide drift layer; (c) removing the first ion implantation mask after the formation of the source region; and (d) implanting impurities of a second conductivity type with an ion beam from a second opening formed in the second ion implantation mask after the removal of the first ion implantation mask to form a base region deeper than the source region in the upper layer part of the drift layer.

摘要翻译： 本发明包括以下步骤：（a）通过光刻法分别在漂移层上形成第一离子注入掩模和第二离子注入掩模，以形成第三离子注入掩模，第一离子注入掩模具有对应于 沟道区，具有对应于源极区的第一开口，所述第二离子注入掩模定位成与所述第一离子注入掩模的外边缘接触并且被配置为形成基区; （b）使用第三离子注入掩模，用离子束从第一开口注入第一导电类型的杂质，以在碳化硅漂移层的上层部分中形成源极区; （c）在形成源极区域之后去除第一离子注入掩模; 以及（d）在除去第一离子注入掩模之后，从形成在第二离子注入掩模中的第二开口用离子束注入第二导电类型的杂质以形成比上层部分中的源极区更深的基极区 的漂移层。

公开(公告)号：US08350309B2

公开(公告)日：2013-01-08

申请号：US13310148

申请日：2011-12-02

申请人： Hiroshi Watanabe ,  Hiroshi Nakamura ,  Kazuhiro Shimizu ,  Seiichi Aritome ,  Toshitake Yaegashi ,  Yuji Takeuchi ,  Kenichi Imamiya ,  Ken Takeuchi ,  Hideko Oodaira

发明人： Hiroshi Watanabe ,  Hiroshi Nakamura ,  Kazuhiro Shimizu ,  Seiichi Aritome ,  Toshitake Yaegashi ,  Yuji Takeuchi ,  Kenichi Imamiya ,  Ken Takeuchi ,  Hideko Oodaira

IPC分类号： H01L27/108 ,  H01L29/73

CPC分类号： G11C16/0483 ,  G11C16/10

摘要： A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.

摘要翻译： 选择栅极晶体管具有由第一级导电层和第二级导电层构成的选择栅电极。 第一级导电层具有接触区域。 第二级导电层的部分被去除，位于接触区域上方。 在列方向上彼此相邻的两个相邻的选择栅电极被布置成使得一个选择栅电极的接触区域不与另一个选择栅电极的接触区域相对。 一个选择栅电极在其与另一个选择栅电极的接触区域相对的部分中移除其第一和第二级导电层。