摘要:
A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.
摘要:
A low impedance high efficiency amplifier is connected to a low impedance isolator. The low impedance high efficiency amplifier includes a plurality of amplifiers and an output matching circuit having a harmonic processing circuit arranged between a fundamental wave regulator circuit/a final stage amplifier and the low impedance isolator.
摘要:
A high frequency power amplifier with reduced power loss and improved power amplification efficiency has an output matching circuit providing an open circuit to a second harmonic and a short circuit to a third harmonic of a high frequency signal. This is accomplished by, for example, adjusting lengths of a drain bias line and a plurality of signal lines so that the phase of S parameter S11 (input reflection coefficient) to the second harmonic is from −80° to 140°, and the phase of S parameter S11 to the third harmonic is from 160° to 220°. The line length of each line in an input matching circuit is also adjusted so that the phase of S parameter S22 (output reflection coefficient) at the fundamental frequency is between +5° to −75°.
摘要:
A second strip conductor is located, in a lamination direction of a multilayer substrate, at a is different position from that of a first strip conductor. A first grounding conductor and a second grounding conductor are disposed sequentially in the lamination direction of the multilayer substrate and sandwich the first strip conductor and the second strip conductor. The first grounding conductor includes a first grounding conductor portion for a wiring prohibited area in which no wiring may be placed, and a second grounding conductor portion for an area other than the wiring prohibited area. The second grounding conductor portion is positioned, in the lamination direction of the multilayer substrate, at a location is different from that of the first grounding conductor portion.
摘要:
A high-frequency amplifier in a power amplifier module includes, on a substrate on which the amplifier is formed, first- and second-stage amplifiers for receiving and amplifying an input signal, a harmonic processing circuit for matching of harmonics included in an output signal from the second-stage amplifier, and a low-pass filter receiving an output from the harmonic processing circuit to selectively pass a signal to be supplied to a non-reciprocal circuit element using a predetermined frequency as a cutoff frequency.
摘要:
A radio-frequency composite element includes an element substrate carrying a high-efficiency amplifier, a transmission line, and an isolator. The amplifier is a semiconductor element mounted on a multilayer substrate and enveloped by a cover. The transmission line furnished on the element substrate connecting an output terminal of the high-efficiency amplifier with an input terminal of the isolator, so that the components make up an integral composite element.
摘要:
A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.
摘要:
A semiconductor chip for amplification is connected between input-side and output-side matching circuits, and each of matching circuits includes balanced circuits which receive signals different in phase by 180 degrees, divided from an input signal. The balanced circuits are connected at a virtual grounding point, which is used as a grounding point sensitive to RF characteristics in an IPD. Thus, a semiconductor device can be free from influence of variations of grounding wires and can be reduced in size, weight, and cost.
摘要:
A resonance circuit of a transmission line and a capacitor is connected to the base circuit of a transistor. The transmission line is shorter than one-quarter wavelength to make the resonant frequency of the resonant circuit higher than the frequency of a second harmonic. As a result, the angle of the reflection coefficient of the second harmonic when an input matching circuit side is viewed from the input terminal of the transistor ranges from 170° to 270° on a polar chart, and phase difference between the fundamental wave of the base current and the second harmonic decreases.
摘要:
A mobile terminal displays a screen image provided by an image data which is produced. An in-vehicle apparatus is fixed to a vehicle or is mounted on the vehicle to be portable. The mobile terminal sends the image data to the in-vehicle apparatus through communication such that a vehicle display portion of the in-vehicle apparatus displays a screen image provided by the image data. In a case where a communication between the in-vehicle apparatus and the mobile terminal is established, when one of the mobile terminal or the in-vehicle apparatus, in which an input operation has been performed prior to the other of the mobile terminal or the in-vehicle apparatus, is in operation, only the one of the mobile terminal or the in-vehicle apparatus is operable.