公开(公告)号：US07186602B2

公开(公告)日：2007-03-06

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/84 ,  H01L21/324

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US08114217B2

公开(公告)日：2012-02-14

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： C30B1/02

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07410848B2

公开(公告)日：2008-08-12

申请号：US10878331

申请日：2004-06-29

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L21/84

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US20050145845A1

公开(公告)日：2005-07-07

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76 ,  H01L21/84

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

公开(公告)号：US06870126B2

公开(公告)日：2005-03-22

申请号：US10668285

申请日：2003-09-24

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  B23K26/00

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20060138351A1

公开(公告)日：2006-06-29

申请号：US11299789

申请日：2005-12-13

申请人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

发明人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

IPC分类号： A61N5/00 ,  B23K26/00

CPC分类号： B23K26/066 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0838 ,  B23K26/354 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  C30B35/00

摘要： A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.

公开(公告)号：US20050272274A1

公开(公告)日：2005-12-08

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/26

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。

公开(公告)号：US06946367B2

公开(公告)日：2005-09-20

申请号：US10366754

申请日：2003-02-13

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/322

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

摘要翻译： 从非单晶层形成单晶半导体薄膜层的方法包括将具有均匀强度分布和调制振幅的光源引向非单晶层，并相对于其相对移动光， 调节后的光的振幅优选在光的相对运动方向上增加。 优选的方法还包括重叠系列中的多次曝光以形成带状单晶区域，并且在半导体层中提供低温点以产生用于单晶化的起始位置。

公开(公告)号：US07550694B2

公开(公告)日：2009-06-23

申请号：US11299789

申请日：2005-12-13

申请人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

发明人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

IPC分类号： B23K26/02 ,  H01L21/268

CPC分类号： B23K26/066 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0838 ,  B23K26/354 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  C30B35/00

摘要： A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.

摘要翻译： 激光退火装置设置有激光源; 均匀化光学系统，其设置在从所述激光源发射的激光的光路中，以使所述激光在与所述光路垂直的部分中的强度分布均匀化; 设置在通过均匀化光学系统的激光的光路中的相移器，以在垂直于光路的部分中产生激光的强度分布图案; 设置在通过所述移相器的激光的光路中的感光体装置，以截取激光的一部分并测量被截取的激光的量; 以及设置在穿过感光器件的激光的光路中的成像光学系统，以将激光聚焦在待处理的基底上。

公开(公告)号：US07335261B2

公开(公告)日：2008-02-26

申请号：US11198656

申请日：2005-08-05

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： C30B1/04

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

摘要翻译： 公开了一种从由绝缘材料制成的基底层上形成的非单晶半导体层形成具有优异结晶度的半导体膜的装置。 该装置包括光源，用于均匀化发射光的强度分布的均质器，用于执行调幅的幅度调制装置，使得强度分布均匀化的光的振幅在 光向基层的相对运动的方向，用于将调幅光投影到非单晶半导体的表面上以使得能够获得预定的照射能量的可选的光投射光学系统，用于 在由光照射的表面中提供低温点，以及衬底台，以相对于衬底移动光，从而使得能够在X和Y轴上进行扫描。