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    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT
    11.
    发明申请
    HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT 有权
    具有分级光电转换器的高全能容量像素

    公开(公告)号：US20130001661A1

    公开(公告)日：2013-01-03

    申请号：US13615196

    申请日：2012-09-13

    Applicant: Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    Inventor： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC: H01L31/02

    CPC classification number: H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    Abstract: Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    Abstract translation: 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    CMOS image sensor with heat management structures
    13.
    发明授权
    CMOS image sensor with heat management structures 有权
    具有热管理结构的CMOS图像传感器

    公开(公告)号：US08274101B2

    公开(公告)日：2012-09-25

    申请号：US12852990

    申请日：2010-08-09

    Applicant: Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    Inventor： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    IPC: H01L27/148

    CPC classification number: H01L27/14632 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/1464

    Abstract: An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.

    Abstract translation: 图像传感器包括器件晶片的器件晶片衬底，器件晶片的器件层，以及任选的热控结构和/或散热器。 器件层设置在器件晶片衬底的前侧，并且包括设置在像素阵列区域内的多个感光元件和设置在外围电路区域内的外围电路。 光敏元件对入射到器件晶片衬底背面的光敏感。 热控制结构设置在器件晶片衬底内，并且将像素阵列区域与外围电路区域隔离，以减少外围电路区域和像素阵列区域之间的热传递。 散热器将热量从器件层传导出去。

    Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy
    14.
    发明授权
    Lightly-doped drains (LDD) of image sensor transistors using selective epitaxy 有权
    使用选择性外延的图像传感器晶体管的轻掺杂漏极（LDD）

    公开(公告)号：US08253200B2

    公开(公告)日：2012-08-28

    申请号：US12274275

    申请日：2008-11-19

    Applicant: Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

    Inventor： Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes ,  Vincent Venezia ,  Yin Qian

    IPC: H01L29/78

    CPC classification number: H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/6659 ,  H01L29/66636

    Abstract: Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.

    Abstract translation: 本发明的实施例涉及一种具有设置在硅衬底中的像素晶体管和外围晶体管的图像传感器。 对于一些实施例，保护涂层设置在外围晶体管上，并且掺杂的硅在衬底上外延生长以形成用于像素晶体管的轻掺杂漏极（LDD）区域。 保护氧化物可以用于在像素晶体管的LDD区域的形成期间防止外围晶体管上的硅的外延生长。

    Image sensor with backside passivation and metal layer
    16.
    发明授权
    Image sensor with backside passivation and metal layer 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US08232133B2

    公开(公告)日：2012-07-31

    申请号：US13191042

    申请日：2011-07-26

    Applicant: Howard E. Rhodes ,  Hidetoshi Nozaki

    Inventor： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC: H01L21/00

    CPC classification number: H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    Abstract: An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

    Abstract translation: 图像传感器包括对不同波长的光进行滤光的半导体层。 例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的正面附近。 在半导体层的背面附近的光电二极管附近形成掺杂剂层。 主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE
    17.
    发明申请
    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US20120153123A1

    公开(公告)日：2012-06-21

    申请号：US12972188

    申请日：2010-12-17

    Applicant: Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    Inventor： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC: H01L27/146

    CPC classification number: H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    Abstract: An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.

    Abstract translation: 图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM
    19.
    发明申请
    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM 有权
    带压片的背面照明图像传感器

    公开(公告)号：US20120038014A1

    公开(公告)日：2012-02-16

    申请号：US12853803

    申请日：2010-08-10

    Applicant: Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    IPC: H01L27/146 ,  H01L31/0216

    CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

    Abstract: A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

    Abstract translation: 背面照明（“BSI”）互补金属氧化物半导体（“CMOS”）图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对入射到BSI CMOS图像传感器背面的光敏感，以收集图像电荷。 应力调整层设置在半导体层的背面，以建立一种应力特性，该应力特性促使光生电荷载流子迁移到光敏区域。

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