METHODS FOR FORMING A CHIP PACKAGE
    11.
    发明申请

    公开(公告)号:US20190287875A1

    公开(公告)日:2019-09-19

    申请号:US16431808

    申请日:2019-06-05

    Abstract: In various embodiments, methods for forming a chip package are provided. The chip package may include a chip comprising a chip metal surface, a metal contact structure electrically contacting the chip metal surface, a packaging material at least partially encapsulating the chip and the metal contact structure, and a chemical compound physically contacting the packaging material and at least one of the chip metal surface and the metal contact structure, wherein the chemical compound may be configured to improve an adhesion between the metal contact structure and the packaging material and/or between the chip metal surface and the packaging material, as compared with an adhesion in an arrangement without the chemical compound, wherein the chemical compound is essentially free from functional groups comprising sulfur, selenium or tellurium.

    On-Chip RF Shields with Backside Redistribution Lines
    14.
    发明申请
    On-Chip RF Shields with Backside Redistribution Lines 审中-公开
    带背面再分配线的片上RF屏蔽

    公开(公告)号:US20150024591A1

    公开(公告)日:2015-01-22

    申请号:US14505270

    申请日:2014-10-02

    Abstract: Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.

    Abstract translation: 公开了一种片上系统的结构以及片上系统的形成方法。 在一个实施例中,一种制造片上系统的方法包括从衬底的背面形成穿透衬底开口,穿过衬底开口设置在第一和第二区域之间,第一区域包括用于RF电路的装置,第二区域包括第二 区域包括用于其他电路的装置。 该方法还包括在光致抗蚀剂层上形成用于再分配线的图案,设置在背面下方的光致抗蚀剂层,以及用导电材料填充贯通基板开口和再分配线图案。

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