公开(公告)号：US20230405976A1

公开(公告)日：2023-12-21

申请号：US18241067

申请日：2023-08-31

Applicant: Intel Corporation

Inventor： Jieying KONG ,  Gang DUAN ,  Srinivas PIETAMBARAM ,  Patrick QUACH ,  Dilan SENEVIRATNE

IPC: B32B17/10 ,  B32B15/20 ,  H01L23/00 ,  H01L23/48

CPC classification number: B32B17/10192 ,  B32B15/20 ,  H01L24/09 ,  H01L23/481 ,  H01L2224/02379

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatus, and/or processes directed to a manufacturing process flow for packages that include one or more glass layers that include patterning features, such as electrically conductive traces, RDLs, and vias within the packages. In embodiments, a package may include a glass layer with a first side and a second side opposite the first side, where the glass layer is a dielectric layer. The package may include another layer coupled with the first side of the glass layer, and a pattern on the second side of the glass layer to receive a deposited material in at least a portion of the pattern.

公开(公告)号：US20230091834A1

公开(公告)日：2023-03-23

申请号：US17482380

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Bainye Francoise ANGOUA ,  Ala OMER ,  Sarah BLYTHE ,  Junxin WANG ,  Whitney BRYKS ,  Dilan SENEVIRATNE ,  Jieying KONG

IPC: G02B6/125 ,  G02B6/13

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed an optical waveguide formed in a glass layer. The optical waveguide may be formed by creating a first trench extending from a surface of the glass layer, and then creating a second trench extending from the bottom of the first trench, then subsequently filling the trenches with a core material which may then be topped with a cladding material. Other embodiments may be described and/or claimed.

公开(公告)号：US20210305668A1

公开(公告)日：2021-09-30

申请号：US17344715

申请日：2021-06-10

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Jeremy D. ECTON ,  Aleksandar ALEKSOV ,  Kristof DARMAWIKARTA ,  Yonggang LI ,  Dilan SENEVIRATNE

IPC: H01P1/208 ,  H01L23/66 ,  H01P7/10 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288 ,  H01P1/20

Abstract: A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

公开(公告)号：US20200083164A1

公开(公告)日：2020-03-12

申请号：US16129711

申请日：2018-09-12

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Frank TRUONG ,  Shivasubramanian BALASUBRAMANIAN ,  Dilan SENEVIRATNE ,  Yonggang LI ,  Sameer PAITAL ,  Darko GRUJICIC ,  Rengarajan SHANMUGAM ,  Melissa WETTE ,  Srinivas PIETAMBARAM

IPC: H01L23/522 ,  H01L49/02 ,  H01L27/01 ,  H01L21/768 ,  H01L23/00

Abstract: Embodiments include package substrates and a method of forming the package substrates. A package substrate includes a dielectric having a cavity that has a footprint, a resistor embedded in the cavity of the dielectric, and a plurality of traces on the resistor, where a plurality of surfaces of the resistor are activated surfaces. The resistor may also have a plurality of sidewalls which may be activated sidewalls and tapered. The dielectric may include metallization particles/ions. The resistor may include resistive materials, such as nickel-phosphorus (NiP), aluminum-nitride (AlN), and/or titanium-nitride (TiN). The package substrate may further include a first resistor embedded adjacently to the resistor. The first resistor may have a first footprint of a first cavity that is different than the footprint of the cavity of the resistor. The resistor may have a resistance value that is thus different than a first resistance value of the first resistor.

公开(公告)号：US20190043776A1

公开(公告)日：2019-02-07

申请号：US16074755

申请日：2016-04-02

Applicant: Intel Corporation

Inventor： Pramod MALATKAR ,  Aleksandar ALEKSOV ,  Dilan SENEVIRATNE ,  Edvin CETEGEN

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/065

Abstract: Techniques and mechanisms for providing packaged circuitry. In an embodiment, first circuit structures are coupled to a release layer on a first side of a substrate, and second circuit structures are coupled to another release layer on a second side of the substrate. Respective portions of mold compound are variously injection molded or otherwise deposited around the first circuit structures and around the second circuit structures. The mold compound portions are cured while the first circuit structures and the second circuit structures are on opposite respective sides of the substrate. In another embodiment, the first circuit structures and the second circuit structures are separated from each other and from the substrate, after curing of the mold compound portions, to form distinct packaged devices.

公开(公告)号：US20170243762A1

公开(公告)日：2017-08-24

申请号：US15588500

申请日：2017-05-05

Applicant: Intel Corporation

Inventor： Yonggang Yong LI ,  Aritra DHAR ,  Dilan SENEVIRATNE ,  Jon M. WILLIAMS

IPC: H01L21/48 ,  C23C18/38 ,  C23C18/16 ,  H01L21/288 ,  H01L23/498

CPC classification number: H01L21/4857 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/38 ,  H01L21/288 ,  H01L21/486 ,  H01L21/4864 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/17 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K3/0032 ,  H05K3/045 ,  H05K3/107 ,  H05K3/185 ,  H05K2201/0236 ,  H05K2203/072 ,  H05K2203/107

Abstract: Embodiments describe the selective electroless plating of dielectric layers. According to an embodiment, a dielectric layer is patterned to form one or more patterned surfaces. A seed layer is then selectively formed along the patterned surfaces of the dielectric layer. An electroless plating process is used to deposit metal only on the patterned surfaces of the dielectric layer. According to an embodiment, the dielectric layer is doped with an activator precursor. Laser assisted local activation is performed on the patterned surfaces of the dielectric layer in order to selectively form a seed layer only on the patterned surfaces of the dielectric layer by reducing the activator precursor to an oxidation state of zero. According to an additional embodiment, a seed layer is selectively formed on the patterned surfaces of the dielectric layer with a colloidal or ionic seeding solution.

公开(公告)号：US20240105476A1

公开(公告)日：2024-03-28

申请号：US17951114

申请日：2022-09-23

Applicant: Intel Corporation

Inventor： Whitney BRYKS ,  Thomas HEATON ,  Joshua STACEY ,  Dilan SENEVIRATNE ,  Cansu ERGENE

IPC: B05C13/02 ,  B05C5/02 ,  B05D1/26

CPC classification number: B05C13/02 ,  B05C5/02 ,  B05D1/26

Abstract: The present disclosure is directed to a coating module including: a coating stage and a plurality of vertical guides configured to perpendicularly extend from the coating stage; a vertical movement mechanism configured to lower a framed panel along the plurality of vertical guides onto the coating stage; an optical alignment tool configured to provide feedback on a lateral alignment between an edge of the coating stage and the framed panel; and a dispensing unit configured to coat a surface of the panel.

公开(公告)号：US20230090863A1

公开(公告)日：2023-03-23

申请号：US17482384

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Dilan SENEVIRATNE ,  Whitney BRYKS ,  Ala OMER ,  Jieying KONG ,  Sarah BLYTHE ,  Bainye Francoise ANGOUA

IPC: G02B6/42 ,  G02B6/12

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to dense integration of PICs in a substrate using an optical fanout structure that includes waveguides formed within a substrate to optically couple with the PICs at an edge of the substrate. One or more PICs may then be electrically with dies such as processor dies or memory dies. The one or more PICs may be located within a cavity in the substrate. The substrate may be made of glass or silicon. Other embodiments may be described and/or claimed.

公开(公告)号：US20210078296A1

公开(公告)日：2021-03-18

申请号：US16574252

申请日：2019-09-18

Applicant: Intel Corporation

Inventor： Jieying KONG ,  Gang DUAN ,  Srinivas PIETAMBARAM ,  Patrick QUACH ,  Dilan SENEVIRATNE

IPC: B32B17/10 ,  B32B15/20 ,  H01L23/48 ,  H01L23/00

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatus, and/or processes directed to a manufacturing process flow for packages that include one or more glass layers that include patterning features, such as electrically conductive traces, RDLs, and vias within the packages. In embodiments, a package may include a glass layer with a first side and a second side opposite the first side, where the glass layer is a dielectric layer. The package may include another layer coupled with the first side of the glass layer, and a pattern on the second side of the glass layer to receive a deposited material in at least a portion of the pattern.

公开(公告)号：US20200373261A1

公开(公告)日：2020-11-26

申请号：US16421989

申请日：2019-05-24

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Jeremy D. ECTON ,  Aleksandar ALEKSOV ,  Kristof DARMAWIKARTA ,  Yonggang LI ,  Dilan SENEVIRATNE

IPC: H01L23/66 ,  H01P7/10 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288

Abstract: A filter structure comprises a first dielectric buildup film. A second dielectric buildup film is over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst. A trench is in the second dielectric buildup film. A metal is selectively plated to sidewalls of the trench based at least in part on the metallization catalyst. A low-loss buildup film is over the metal that substantially fills the trench.