Digitally controlled zero voltage switching
    11.
    发明申请

    公开(公告)号:US20170187284A1

    公开(公告)日:2017-06-29

    申请号:US14757802

    申请日:2015-12-23

    CPC classification number: H02M1/083 H02M1/38 H02M3/1588 Y02B70/1466

    Abstract: Generally, this disclosure describes an apparatus. The apparatus includes switch controller circuitry. The switch controller circuitry includes dead time logic circuitry to determine an estimated dead time interval between a turn off of a first switch and a turn on of a second switch. The first switch and the second switch are coupled at a switched node. The estimated dead time interval is determined based, at least in part, on a difference between an input voltage, Vin, and a switched voltage, Vsw, detected at the switched node just prior to turning off the first switch, a parasitic capacitance, Cpar, associated with the switched node and a maximum inductor current, IL,max. The difference between Vin and Vsw represents the maximum inductor current.

    VOLTAGE REGULATOR PARTITIONING ACROSS STACKED DIE

    公开(公告)号:US20250103074A1

    公开(公告)日:2025-03-27

    申请号:US18474147

    申请日:2023-09-25

    Abstract: Embodiments herein relate to a voltage regular (VR) formed from dies stacked on a package base layer. The VR can include a first part on a first die and a second part on a second die, where the different parts are selected based on characteristics of the respective die such as their voltage domains or technologies. In a capacitor-based VR, an input capacitor and switches subject to a relatively high input voltage can be provided in the first die, while a flying capacitor, output capacitor and switches subject to a relatively low output voltage can be provided in the second die. In an inductor-based VR, an inductor and one or more switches subject to a relatively high input voltage can be provided in the first die, while an output capacitor subject to a relatively low output voltage can be provided in the second die.

    NON-LINEAR CLAMP STRENGTH TUNING METHOD AND APPARATUS

    公开(公告)号:US20210203228A1

    公开(公告)日:2021-07-01

    申请号:US16727759

    申请日:2019-12-26

    Abstract: A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.

    Computational current sensor
    19.
    发明授权

    公开(公告)号:US12261526B2

    公开(公告)日:2025-03-25

    申请号:US17323837

    申请日:2021-05-18

    Abstract: A computational current sensor, that enhances traditional Kalman filter based current observer techniques, with transient tracking enhancements and an online parasitic parameter identification that enhances overall accuracy during steady state and transient events while guaranteeing convergence. During transient operation (e.g., a voltage droop), a main filter is bypassed with estimated values calculated from a charge balance principle to enhance accuracy while tracking transient current surges of the DC-DC converter. To address the issue of dependency on a precise model parameter information and further improve accuracy, an online identification algorithm is included to track the equivalent parasitic resistance at run-time.

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