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公开(公告)号：US09680051B2
公开(公告)日：2017-06-13
申请号：US14265371
申请日：2014-04-30
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Yu-Hsuan Lu
Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm2. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.
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公开(公告)号：US20150083990A1
公开(公告)日：2015-03-26
申请号：US14033527
申请日：2013-09-23
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Chih-Wei Hu
Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k≦i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively.
Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，第一和第二电极的发光二极管。 有源层位于n型和p型半导体层之间，包括i量子阱和（i + 1）量子势垒层，每个量子阱位于任何两个量子势垒层之间，每个量子阱 i量子阱中的阱由发光层和辅助层构成，其中辅助层的铟浓度大于发光层的铟浓度，其中i和k是大于或等于的自然数 到1和k＆nlE; i。 第一电极和第二电极分别位于n型半导体层和p型半导体层。
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公开(公告)号：US20140131732A1
公开(公告)日：2014-05-15
申请号：US14080805
申请日：2013-11-15
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Rong Xuan , Hsun-Chih Liu
CPC classification number: H01L33/642 , H01L33/002 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/22 , Y10T428/24562
Abstract: A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, and a defect density of the active layer is less than or equal to 5×1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.
Abstract translation: 发光二极管器件可以包括载体，p型和n型半导体层，有源层，第一电极和第二电极。 载体在生长表面上具有生长表面和至少一个纳米图案结构，其中载体包括衬底和设置在衬底和n型半导体层之间的半导体覆盖层。 n型半导体层和p型半导体层位于载体的生长表面上。 有源层位于n型和p型半导体层之间，其中由有源层发射的光的波长λ为222nm＆lt; lE;λ＆nlE; 405nm，并且有源层的缺陷密度小于或等于 等于5×10 10 / cm 2。 第一和第二电极分别连接到n型和p型半导体层。 还提供了用于承载半导体层的载体。
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公开(公告)号：US20140097442A1
公开(公告)日：2014-04-10
申请号：US13647389
申请日：2012-10-09
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Yen-Hsiang Fang , Chen-Zi Liao , Rong Xuan , Chien-Pin Lu , Yi-Keng Fu , Chih-Wei Hu , Hsun-Chih Liu
IPC: H01L33/32
CPC classification number: H01L33/12 , H01L33/025 , H01L33/32
Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer.
Abstract translation: 氮化物半导体器件包括硅衬底，成核层，第一缓冲层，第一氮化物半导体层，发光层和第二氮化物半导体层。 成核层设置在硅衬底上。 第一缓冲层设置在成核层上。 第一缓冲层包括掺杂剂和镓，并且掺杂剂的原子半径大于镓的原子半径。 第一种氮化物半导体层设置在第一缓冲层上。 发光层设置在第一氮化物半导体层上。 第二种氮化物半导体层设置在发光层上。
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公开(公告)号：US20180193499A1
公开(公告)日：2018-07-12
申请号：US15826690
申请日：2017-11-30
Applicant: Industrial Technology Research Institute
Inventor： Chien-Chun Lu , Chen-Peng Hsu , Yi-Keng Fu , Chia-Fen Hsieh
Abstract: A light source apparatus comprises a main body, a plurality of light source modules and a processor. The main body includes a plurality of configuration areas distributed on a surface of the main body. The plurality of configuration areas is oriented towards different directions, respectively. The plurality of light source modules is located in the plurality of configuration areas, respectively. Each of the plurality of light source modules includes a circuit substrate and an ultraviolet emitting device. The processor is electrically connected to the plurality of light source modules. The processor is adapted to drive the ultraviolet emitting device of each of the plurality of light source modules. A method of using a light source apparatus is also provided.
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Patent Agency Ranking
公开(公告)号：US09523572B2
公开(公告)日：2016-12-20
申请号：US14583432
申请日：2014-12-26
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Tzung-Te Chen , Chien-Ping Wang , Shang-Ping Ying , Yi-Keng Fu , Hsun-Chih Liu
IPC: G01B11/25 , G01B11/255
CPC classification number: G01B11/2513 , G01B11/255
Abstract: An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.
Abstract translation: 用于测量薄膜曲率的装置适于测量薄膜的曲率。 该装置包括发光模块，第一光学模块，第二光学模块，第三光学模块，图像捕获模块和图像分析模块。 发光模块发射至少一条线激光器作为入射光，其入射光的横截面形状是由线形成的几何图形。 入射光通过由第一光学模块形成的第一光路透射，并且被引导通过第二光学模块入射薄膜。 反射光被薄膜反射穿过第二光路，并且被第三光学模块引导通过第三光路传输，然后被捕获模块捕获以形成第二几何图像。
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公开(公告)号：US09397281B2
公开(公告)日：2016-07-19
申请号：US14583780
申请日：2014-12-29
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Rong Xuan , Hsun-Chih Liu
CPC classification number: H01L33/642 , H01L33/002 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/22 , Y10T428/24562
Abstract: A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.
Abstract translation: 提供了用于在生长表面上承载具有生长表面和至少一个纳米图案结构的半导体层的载体。 在载体的生长表面上的至少一个纳米图案结构具有多个台面，在两个相邻的台面之间形成凹部，其中凹部的深度范围为10nm至500nm， 台面范围为10nm至800nm。
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公开(公告)号：US08952411B2
公开(公告)日：2015-02-10
申请号：US14080805
申请日：2013-11-15
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Rong Xuan , Hsun-Chih Liu
CPC classification number: H01L33/642 , H01L33/002 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/20 , H01L33/22 , Y10T428/24562
Abstract: A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, and a defect density of the active layer is less than or equal to 5×1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.
Abstract translation: 发光二极管器件可以包括载体，p型和n型半导体层，有源层，第一电极和第二电极。 载体在生长表面上具有生长表面和至少一个纳米图案结构，其中载体包括衬底和设置在衬底和n型半导体层之间的半导体覆盖层。 n型半导体层和p型半导体层位于载体的生长表面上。 有源层位于n型和p型半导体层之间，其中由有源层发射的光的波长λ为222nm＆lt; lE;λ＆nlE; 405nm，并且有源层的缺陷密度小于或等于 等于5×10 10 / cm 2。 第一电极和第二电极分别连接到n型和p型半导体层。 还提供了用于承载半导体层的载体。
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公开(公告)号：US20140231747A1
公开(公告)日：2014-08-21
申请号：US14265371
申请日：2014-04-30
Applicant: Industrial Technology Research Institute
Inventor： Yi-Keng Fu , Yu-Hsuan Lu
IPC: H01L33/06
Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i≧2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k≧1, when i even, k≧i/2, and when i is odd, k≧(i−1)/2.
Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，中间层，电子势垒层，第一和第二电极的发光二极管。 n型半导体层设置在蓝宝石衬底上。 有源层具有大于或等于2×107 / cm3的缺陷密度的有源区。 有源层设置在n型和p型半导体层之间。 由有源层发射的光的波长为λ，并且为222nm＆nlE;λ＆nlE; 405nm。 有源层包括i量子势垒层和（i-1）量子阱，每个量子阱设置在任何两个量子势垒层之间，i≥2。 在i个量子势垒层的至少k个层中掺杂N型掺杂剂，其中k是自然数，k≥1，当i even，k≥i/ 2，当i是奇数时，k≥（i- 1）/ 2。
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公开(公告)号：US20130228743A1
公开(公告)日：2013-09-05
申请号：US13727619
申请日：2012-12-27
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Yi-Keng Fu , Yu-Hsuan Lu
IPC: H01L33/04
Abstract: A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a1. The interlayer is located between and in contact with the active layer and the p-type semiconductor layer, wherein a lattice constant of the interlayer is a2. The electron barrier layer is located between the interlayer and the p-type semiconductor layer, wherein a lattice constant of the electron barrier layer is a3, and a2 is not equal to a1 or a3. The first and second electrodes are respectively located on the n-type and p-type semiconductor layers.
Abstract translation: 提供了包括基板，p型和n型半导体层，有源层，中间层，电子势垒层，第一和第二电极的发光二极管。 有源层位于n型和p型半导体层之间，并且包括位于任何两个量子势垒层之间的多个量子势垒层和量子阱。 最靠近p型半导体层的量子势垒层的晶格常数为a1。 中间层位于活性层和p型半导体层之间并与之接触，其中层间的晶格常数为a2。 电子势垒层位于中间层和p型半导体层之间，其中电子势垒层的晶格常数为a3，a2不等于a1或a3。 第一和第二电极分别位于n型和p型半导体层上。
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