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    Reflection type phase shifter with active device tuning
    12.
    发明授权
    Reflection type phase shifter with active device tuning 有权

    公开(公告)号：US10181833B2

    公开(公告)日：2019-01-15

    申请号：US15460297

    申请日：2017-03-16

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou

    IPC: H03H7/20 ,  H01L29/78 ,  H03H7/18 ,  H03H7/19

    Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

    Compact doherty power amplifier using non-uniform phase match devices
    15.
    发明授权
    Compact doherty power amplifier using non-uniform phase match devices 有权

    公开(公告)号：US10320335B1

    公开(公告)日：2019-06-11

    申请号：US15962672

    申请日：2018-04-25

    Applicant: Infineon Technologies AG

    Inventor： Haedong Jang ,  Bjoern Herrmann ,  Zulhazmi Mokhti ,  Richard Wilson

    IPC: H03F1/02 ,  H03F3/193 ,  H03F3/21 ,  H01L23/66 ,  H03F1/56 ,  H01L23/00

    Abstract: An RF amplifier includes an amplifier chip on a flange having an input and an output comprising a parasitic capacitance and a parasitic inductance, a first chip capacitor coupled to the output of the output of the amplifier by a first plurality of bond wires, and a second chip capacitor coupled to the first chip capacitor by a second plurality of bond wires, and an output impedance matching network having an input coupled to the output of the second chip capacitor by a third plurality of bond wires, and an output, and a phase shift between the input and the output of less than 90 degrees, wherein the phase shift from the output of the amplifier chip to the output of the output impedance matching network is 180 degrees.

    RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning Network
    16.
    发明申请
    RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning Network 审中-公开

    公开(公告)号：US20190165753A1

    公开(公告)日：2019-05-30

    申请号：US15823155

    申请日：2017-11-27

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Haedong Jang ,  Richard Wilson ,  Frank Trang ,  Qianli Mu ,  EJ Hashimoto

    IPC: H03H7/40 ,  H03F3/24 ,  H03F3/193 ,  H03F1/56 ,  H03H11/30 ,  H03F1/02

    Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

    RF amplifier with dual frequency response capacitor
    17.
    发明授权
    RF amplifier with dual frequency response capacitor 有权

    公开(公告)号：US10236833B2

    公开(公告)日：2019-03-19

    申请号：US15667195

    申请日：2017-08-02

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

    IPC: H03F3/14 ,  H03F1/56 ,  H03F3/195 ,  H01L23/66

    Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

    RF Amplifier with Dual Frequency Response Capacitor
    18.
    发明申请
    RF Amplifier with Dual Frequency Response Capacitor 审中-公开

    公开(公告)号：US20190044483A1

    公开(公告)日：2019-02-07

    申请号：US15667195

    申请日：2017-08-02

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

    IPC: H03F1/56 ,  H03F3/195 ,  H01L23/66

    Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

    LC network for a power amplifier with selectable impedance
    19.
    发明授权
    LC network for a power amplifier with selectable impedance 有权

    公开(公告)号：US10050591B2

    公开(公告)日：2018-08-14

    申请号：US15078298

    申请日：2016-03-23

    Applicant: Infineon Technologies AG

    Inventor： Saurabh Goel ,  Richard Wilson ,  Haedong Jang

    IPC: H03F3/19 ,  H03F3/21 ,  H03F1/56

    Abstract: An amplifier is configured to amplify an RF signal as between an input terminal and an output terminal across a wideband frequency range. A first LC network is connected to the input terminal and has first and second reactive components. A first switching device is connected between the first and second reactive components and couples both the first and second reactive components to the input terminal in an ON state, and disconnects the second reactive component from the input terminal in an OFF state. A second LC network is connected to the output terminal and has third and fourth reactive components. A second switching device is connected between the third and fourth reactive components and couples both the third and fourth reactive components to the output terminal in an ON state and disconnects the fourth reactive component from the output terminal in an OFF state.

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