公开(公告)号：US09691972B1

公开(公告)日：2017-06-27

申请号：US14976339

申请日：2015-12-21

申请人： International Business Machines Corporation ,  Tokyo Electron Limited

发明人： Anthony J. Annunziata ,  Sebastian U. Engelmann ,  Eric A. Joseph ,  Gen P. Lauer ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Masahiro Yamazaki

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.

公开(公告)号：US20170148976A1

公开(公告)日：2017-05-25

申请号：US14950830

申请日：2015-11-24

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Janusz J. Nowak ,  Eugene J. O'Sullivan

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

摘要： A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.

公开(公告)号：US20170148875A1

公开(公告)日：2017-05-25

申请号：US15427500

申请日：2017-02-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/06 ,  H01L49/00 ,  H01L29/24

CPC分类号： H01L43/065 ,  G01N27/125 ,  H01L27/22 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/1606 ,  H01L29/24 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H01L49/003

摘要： A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

公开(公告)号：US09660179B1

公开(公告)日：2017-05-23

申请号：US14971058

申请日：2015-12-16

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack

IPC分类号： H01L27/00 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08

摘要： A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.

公开(公告)号：US20170125667A1

公开(公告)日：2017-05-04

申请号：US15202821

申请日：2016-07-06

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack

IPC分类号： H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

公开(公告)号：US20170125480A1

公开(公告)日：2017-05-04

申请号：US15288084

申请日：2016-10-07

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Nathan P. Marchack

IPC分类号： H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

公开(公告)号：US20160260889A1

公开(公告)日：2016-09-08

申请号：US14636821

申请日：2015-03-03

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Rohit Kilaru ,  Nathan P. Marchack ,  Hiroyuki Miyazoe

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/12

摘要： A method of magnetic tunnel junction patterning for magnetoresisitive random access memory devices using low atomic weight ion sputtering. The method includes: providing a magnetoresistive random access memory device including a hard mask metal, a MTJ element, and a semiconductor substrate, wherein the hard mask metal is disposed on the MTJ element and, wherein the MTJ element is disposed on the semiconductor substrate; and etching back the MTJ element into a plurality of MTJ element pillars using a low atomic weight ion sputtering. A magnetoresistive random access memory device using low atomic weight ion sputtering. The device includes: a semiconductor substrate; a plurality of MTJ element pillars disposed on the semiconductor substrate, wherein the plurality of MTJ element pillars is etched from a MTJ element using a low atomic weight ion sputtering; and a hard mask metal disposed on the MTJ element pillars.

摘要翻译： 一种用于使用低原子量离子溅射的电磁随机存取存储器件的磁隧道结图案化方法。 该方法包括：提供包括硬掩模金属，MTJ元件和半导体衬底的磁阻随机存取存储器件，其中所述硬掩模金属设置在所述MTJ元件上，并且其中所述MTJ元件设置在所述半导体衬底上; 并使用低原子量离子溅射将MTJ元件回蚀成多个MTJ元件柱。 一种使用低原子量离子溅射的磁阻随机存取存储器件。 该器件包括：半导体衬底; 设置在半导体衬底上的多个MTJ元件柱，其中使用低原子量离子溅射从MTJ元件蚀刻多个MTJ元件柱; 以及设置在MTJ元件支柱上的硬掩模金属。

公开(公告)号：US20150294708A1

公开(公告)日：2015-10-15

申请号：US14583983

申请日：2014-12-29

申请人： International Business Machines Corporation ,  Crocus Technology SA

发明人： Anthony J. Annunziata ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

摘要： A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.

摘要翻译： 提供了一种用于热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 存储层具有各向异性轴，其中存储层被配置为在离轴位置和轴位置上存储状态。 离轴位置不与各向异性轴对齐。 隧道势垒设置在存储层的顶部。 铁磁感应层设置在隧道屏障的顶部。

公开(公告)号：US20150270478A1

公开(公告)日：2015-09-24

申请号：US14217999

申请日：2014-03-18

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

摘要： A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.

摘要翻译： 提供了一种用于热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 非磁性加热结构由设置在缓冲层上的阻挡种子层形成。 在阻挡种子层上设置非磁性隧道势垒。 阻挡层层设置在非磁性隧道屏障上。 顶部缓冲层设置在阻挡层上。 反铁磁层设置在非磁性加热结构的顶部缓冲层上。 磁性隧道结设置在反铁磁层上。 磁性隧道结包括设置在反铁磁层上的铁磁存储层，设置在铁磁存储层上的非磁性有源隧道势垒，以及设置在非磁性主动隧道势垒上的铁磁感应层。

公开(公告)号：US09042151B2

公开(公告)日：2015-05-26

申请号：US13835254

申请日：2013-03-15

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Marcin J. Gajek

IPC分类号： G11C19/02 ,  G11C19/08

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C19/02 ,  G11C19/0816 ,  G11C19/0841

摘要： Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.

摘要翻译： 实施例涉及在磁性跑道存储器中注入畴壁。 在一些实施例中，包括纳米线的赛道与栅极耦合以便操纵与纳米线相关联的各向异性。 赛道和门与被配置成在纳米线中建立磁化方向的钉扎层耦合。