公开(公告)号：US20240209494A1

公开(公告)日：2024-06-27

申请号：US18597912

申请日：2024-03-07

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Yutaka MAJIMA ,  Junichi YAMAURA ,  Shiro KAWACHI ,  Hideo HOSONO ,  Ryo TOYAMA

IPC: C23C14/58 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C22C5/04 ,  C23C14/16 ,  C23C14/22 ,  H01F1/147

CPC classification number: C23C14/5806 ,  C22C5/04 ,  C23C14/16 ,  C23C14/165 ,  C23C14/22 ,  H01F1/147 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00

Abstract: To provide a suitable method of producing an ordered-alloy ferromagnetic nanowire structure. Disclosed is a method of producing an ordered-alloy ferromagnetic nanowire structure, the method including: forming a nanowire on or above a substrate, the nanowire having a width of 100 nm or less and a length of at least twice the width, and made of an iron group element and a platinum group element; and subjecting the nanowire to heat treatment to obtain an ordered-alloy ferromagnetic nanowire structure in which an ordered-alloy ferromagnetic nanowire made of an ordered alloy of the iron group element and the platinum group element is formed on or above the substrate.

公开(公告)号：US20230387137A1

公开(公告)日：2023-11-30

申请号：US18233414

申请日：2023-08-14

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Junghwan Kim ,  Hideya Kumomi

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H10K59/1201

Abstract: In an embodiment, a thin film transistor is formed on a substrate, the thin film transistor includes a channel formed by at least part of a metal oxide semiconductor layer containing at least indium (In), a gate electrode, a gate insulating layer arranged between the channel and the gate electrode, a source electrode connected to the metal oxide semiconductor layer, and a drain electrode connected to the metal oxide semiconductor layer. For example, the average concentration of carbon atoms in an area from a surface to the depth of 5 nm of the channel is 1.5×1021 cm−3 or less, whereby a threshold shift due to a voltage stress can be effectively reduced.

公开(公告)号：US20210343961A1

公开(公告)日：2021-11-04

申请号：US17152142

申请日：2021-01-19

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L31/032

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20210025063A1

公开(公告)日：2021-01-28

申请号：US17040853

申请日：2019-03-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Toshiharu YOKOYAMA ,  Yoshitake TODA ,  Shintaro ISHIYAMA ,  Masami TAGUCHI ,  Hiroki TAKAHASHI

IPC: C25B9/06 ,  C01B32/40 ,  C25B1/02 ,  C01F7/16 ,  C25B11/04

Abstract: An electrolytic cell capable of simply electrolyzing carbon dioxide into carbon monoxide and oxygen with low activation energy, and an electrolytic device. The carbon dioxide electrolytic cell includes a cathode, an anode, and a solid electrolyte having oxide ion conductivity. The cathode is the following (A) or (B); (A) a metal and a first mayenite-type compound are included therein or (B) a metal and a second mayenite-type compound are included therein, said second mayenite type compound including a mayenite type compound having electron conductivity.

公开(公告)号：US20190058142A1

公开(公告)日：2019-02-21

申请号：US16169078

申请日：2018-10-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  AGC Inc.

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L51/50 ,  H01L31/0256

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

公开(公告)号：US20180304237A1

公开(公告)日：2018-10-25

申请号：US16065381

申请日：2016-12-22

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Masaaki KITANO ,  Tomofumi TADA ,  Toshiharu YOKOYAMA ,  Yoshitake TODA ,  Yangfan LU ,  Jiang LI

IPC: B01J23/46 ,  B01J23/10 ,  B01J23/14 ,  B01J35/00 ,  C01C1/04

CPC classification number: B01J23/462 ,  B01J23/10 ,  B01J23/14 ,  B01J23/624 ,  B01J23/63 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/0073 ,  B01J35/1009 ,  B01J37/0207 ,  B01J37/0209 ,  B01J37/0225 ,  B01J37/086 ,  C01C1/04 ,  C01C1/0411 ,  Y02P20/52

Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided.A transition metal-supported intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3  (1) wherein A represents a rare earth element, and X represents Si or Ge.

公开(公告)号：US20170186989A1

公开(公告)日：2017-06-29

申请号：US15460426

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Nobuhiro NAKAMURA ,  Naomichi MIYAKAWA ,  Satoru WATANABE ,  Toshinari WATANABE

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5092 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L51/0096 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5203 ,  H01L51/56 ,  H01L2251/5392 ,  H01L2251/558 ,  H05B33/06 ,  H05B33/26

Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.

公开(公告)号：US20170088433A1

公开(公告)日：2017-03-30

申请号：US15125462

申请日：2015-01-09

Applicant: Japan Science and Technology Agency

Inventor： Hiroshi KAGEYAMA ,  Yoji KOBAYASHI ,  Naoya MASUDA ,  Hideo HOSONO

IPC: C01C1/04 ,  B01J37/16 ,  B01J23/00 ,  B01J37/02 ,  B01J23/58 ,  B01J23/78

CPC classification number: C01C1/0411 ,  B01J23/002 ,  B01J23/58 ,  B01J23/78 ,  B01J37/0236 ,  B01J37/04 ,  B01J37/086 ,  B01J37/16 ,  B01J2523/00 ,  Y02P20/52 ,  B01J2523/25 ,  B01J2523/47 ,  B01J2523/821 ,  B01J2523/845 ,  B01J2523/842

Abstract: The ammonia synthesis catalyst of the present invention, comprises: a powder of a perovskite oxyhydride having hydride (H−) incorporated therein as a support; and a metal or a metal compound exhibiting a catalytic activity for ammonia synthesis, supported on the support, and the perovskite oxyhydride is represented by ATiO3-xHx (wherein A represents Ca, Sr, or Ba, and 0.1≦x≦0.6).

公开(公告)号：US20170355607A1

公开(公告)日：2017-12-14

申请号：US15532877

申请日：2015-12-04

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Hideo HOSONO ,  Michikazu HARA ,  Masaaki KITANO ,  Toshiharu YOKOYAMA ,  Yasunori INOUE

IPC: C01C1/04 ,  B01J37/08 ,  B01J37/00 ,  B01J23/46 ,  B01J35/10

CPC classification number: C01C1/0411 ,  B01J21/18 ,  B01J23/462 ,  B01J23/58 ,  B01J23/63 ,  B01J23/648 ,  B01J27/24 ,  B01J35/0046 ,  B01J35/006 ,  B01J35/0066 ,  B01J35/1014 ,  B01J35/1019 ,  B01J37/0072 ,  B01J37/0205 ,  B01J37/0209 ,  B01J37/04 ,  B01J37/08 ,  B01J37/082 ,  B01J37/086 ,  C01B3/047 ,  C01B21/0923 ,  C01B21/0926 ,  C01P2004/04 ,  Y02E60/364 ,  Y02P20/52

Abstract: An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x . . . (1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.)

公开(公告)号：US20170186984A1

公开(公告)日：2017-06-29

申请号：US15460455

申请日：2017-03-16

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TOKYO INSTITUTE OF TECHNOLOGY ,  Asahi Glass Company, Limited

Inventor： Hideo HOSONO ,  Yoshitake TODA ,  Satoru WATANABE ,  Toshinari WATANABE ,  Kazuhiro ITO ,  Naomichi MIYAKAWA ,  Nobuhiro NAKAMURA

IPC: H01L51/42 ,  H01L31/032 ,  H01J37/34 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L51/4233 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/352 ,  H01J37/3429 ,  H01L31/0324 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2031/0344 ,  H01L2251/303 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.