公开(公告)号：US12085823B2

公开(公告)日：2024-09-10

申请号：US17987887

申请日：2022-11-16

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

CPC classification number: G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78672 ,  H10K59/131 ,  G02F2201/123

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US11894387B2

公开(公告)日：2024-02-06

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Toshihide Jinnai ,  Ryo Onodera ,  Akihiro Hanada

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/7869

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US11177388B2

公开(公告)日：2021-11-16

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US12189253B2

公开(公告)日：2025-01-07

申请号：US18673809

申请日：2024-05-24

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Motochika Yukawa

IPC: G02F1/1339 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A display device includes a first conductive layer arranged on a first substrate and extending in a first direction, a first insulating film arranged on the first conductive layer, a second conductive layer arranged on the first insulating film and extending in a second direction intersecting the first direction, a second insulating film arranged on the second conductive layer and extending in the first direction and the second direction, a transparent conductive layer arranged on the second insulating film and extending in the first direction and the second direction, a third insulating film arranged on the first conductive layer, and a second substrate opposing the first substrate.

公开(公告)号：US12158661B2

公开(公告)日：2024-12-03

申请号：US18502178

申请日：2023-11-06

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Tomoyuki Ito ,  Yoshinori Tanaka

IPC: G02F1/13357 ,  G02F1/1334 ,  H01L27/12

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

公开(公告)号：US12108627B2

公开(公告)日：2024-10-01

申请号：US17533127

申请日：2021-11-23

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Kentaro Miura ,  Hajime Watakabe ,  Ryo Onodera

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/121 ,  H10K59/126 ,  H10K71/00 ,  H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H10K59/123

CPC classification number: H10K59/1213 ,  H10K59/126 ,  H10K71/00 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/1201 ,  H10K59/123

Abstract: A display device includes a first transistor having a first semiconductor layer, in which a first source region includes a first region in contact with a first source electrode, and a first drain region includes a second region in contact with a first drain electrode. The first source and drain regions, the first region, and the second region each include a first impurity element. In a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region. A method of manufacturing a display device includes forming a first gate electrode and a light shielding layer on a first insulating layer, and forming a second semiconductor layer on the light shielding layer.

公开(公告)号：US12068399B2

公开(公告)日：2024-08-20

申请号：US17511633

申请日：2021-10-27

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Takashi Okada ,  Tomoyuki Ito ,  Toshiki Kaneko

IPC: H01L29/66 ,  H01L21/385 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US11855117B2

公开(公告)日：2023-12-26

申请号：US17167081

申请日：2021-02-04

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Akihiro Hanada ,  Marina Mochizuki ,  Ryo Onodera ,  Fumiya Kimura ,  Isao Suzumura

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14689

Abstract: The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ layer. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an N+ layer, an I layer, and a P+ layer are laminated in this order; an anode electrode formed on the P+ layer; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

公开(公告)号：US11550195B2

公开(公告)日：2023-01-10

申请号：US17506694

申请日：2021-10-21

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US11362113B2

公开(公告)日：2022-06-14

申请号：US16986462

申请日：2020-08-06

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Toshihide Jinnai ,  Ryo Onodera ,  Akihiro Hanada

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.