公开(公告)号：US20060202609A1

公开(公告)日：2006-09-14

申请号：US11285552

申请日：2005-11-21

Applicant: Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

Inventor： Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

IPC: H01J1/00 ,  H01J1/62

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

公开(公告)号：US06952022B2

公开(公告)日：2005-10-04

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

Inventor： Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L29/04

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US06331209B1

公开(公告)日：2001-12-18

申请号：US09556816

申请日：2000-04-21

Applicant: Jin Jang ,  Suk-jae Chung

Inventor： Jin Jang ,  Suk-jae Chung

IPC: C30B2518

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/17 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/888

Abstract: An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 1011 cm−3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is used as a source gas.

Abstract translation: 使用高密度等离子体形成纯化的碳纳米管的简单方法，由此除去石墨相或碳颗粒。 使用等离子体化学气相沉积法在1011cm -3以上的高等离子体密度下，在基板上生长碳纳米管。 碳纳米管形成包括：通过等离子体沉积在基板上生长具有预定厚度的碳纳米管层; 通过等离子体蚀刻来净化碳纳米管层; 并重复碳纳米管层的生长和纯化。 对于等离子体蚀刻，使用含卤素的气体，例如四氟化碳气体作为源气体。

公开(公告)号：US5923050A

公开(公告)日：1999-07-13

申请号：US589713

申请日：1996-01-24

Applicant: Jin Jang ,  Jae-seong Byun ,  Hong-bin Jeon

Inventor： Jin Jang ,  Jae-seong Byun ,  Hong-bin Jeon

IPC: H01L21/285 ,  H01L21/336 ,  H01L29/786 ,  H01L29/00

CPC classification number: H01L29/66765 ,  H01L29/78678 ,  H01L21/28525

Abstract: An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.

Abstract translation: 提供了一种通过制造更好的欧姆接触层和有源层而具有改进的特性的用于薄膜晶体管液晶显示器的开关元件的非晶硅薄膜晶体管及其制造方法。 使用包括SiH 2 Cl 2的混合气体制造的宽能隙隙μc-Si（：Cl）用作欧姆接触层，从而可以提高产率和生产率。 活性层由具有低氢含量和高稳定性的μ-Si：H（：Cl）形成。 在照明期间的截止电流急剧下降，从而通过背光进行照明时显着降低泄漏电流。

公开(公告)号：US20120183699A1

公开(公告)日：2012-07-19

申请号：US13498473

申请日：2010-02-02

Applicant: Jin Jang ,  Min Hee Choi ,  Seung Hoon Han

Inventor： Jin Jang ,  Min Hee Choi ,  Seung Hoon Han

IPC: B05D1/36 ,  B05D7/00 ,  B82Y40/00

CPC classification number: B29C41/36 ,  B29C41/085 ,  B29C41/12 ,  B29C41/14 ,  B29C41/22 ,  B29K2105/167 ,  B29L2007/00 ,  B29L2031/3425 ,  B82Y30/00

Abstract: Disclosed is a method for fabricating a flexible board using carbon nanotubes. The method includes applying a carbon nanotube-containing ink onto a substrate to form a deposited layer, and coating a polymeric or monomeric solution on the deposited carbon nanotube layer to form a thin film layer. In accordance with the method, the spin-coated carbon nanotube layer is coated with the polymeric or monomeric chemical solution to minimize an area where the base substrate contacts the polymeric film and thereby to advantageously form a flexible board readily separable from the substrate without applying any external stress or laser.

Abstract translation: 公开了一种使用碳纳米管制造柔性板的方法。 该方法包括将含碳纳米管的油墨施加到基板上以形成沉积层，并在沉积的碳纳米管层上涂覆聚合物或单体溶液以形成薄膜层。 根据该方法，旋涂的碳纳米管层被涂覆有聚合物或单体化学溶液以最小化基底基材与聚合物膜接触的面积，从而有利地形成易于与基材分离的柔性板，而不施加任何 外部应力或激光。

公开(公告)号：US20110233533A1

公开(公告)日：2011-09-29

申请号：US13120403

申请日：2009-05-19

Applicant: Jin Jang ,  Mi-Sun Ryu

Inventor： Jin Jang ,  Mi-Sun Ryu

IPC: H01L51/30

CPC classification number: H01L51/448 ,  Y02E10/549

Abstract: Disclosed herein is an organic thin film device. The organic thin film device includes a UV barrier layer, which has a UV blocking effect, in addition to at least one electrode and at least one organic semiconductor layer on a substrate. The organic thin film device employs a film or a coating liquid which comprises phenolic derivatives or cyanoacrylate derivatives exhibiting a UV-blocking effect in a wavelength of 400 nm or less, so that photodecomposition of an organic material for use in fabrication of the organic thin film device by UV rays and sunlight can be minimized, thereby innovatively increasing lifetime of the device.

Abstract translation: 本文公开了一种有机薄膜器件。 除了至少一个电极和衬底上的至少一个有机半导体层之外，有机薄膜器件还包括具有UV阻挡效应的UV阻挡层。 有机薄膜器件采用膜或涂布液，其包含在400nm或更小的波长下表现出UV阻挡作用的酚衍生物或氰基丙烯酸酯衍生物，使得用于制造有机薄膜的有机材料的光分解 紫外线和太阳光的设备可以最小化，从而创新地增加设备的使用寿命。

公开(公告)号：US07811641B2

公开(公告)日：2010-10-12

申请号：US12139154

申请日：2008-06-13

Applicant: Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

Inventor： Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

IPC: H05H1/24 ,  B05D5/12

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

Abstract translation: 提供了一种形成碳纳米管的方法，具有使用该方法形成的碳纳米管的场致发射显示装置以及该场致发射显示装置的制造方法。 形成碳纳米管的方法包括在基板上形成催化金属层，在催化金属层上形成绝缘层，在绝缘层上形成碳纳米管。

公开(公告)号：US07659185B2

公开(公告)日：2010-02-09

申请号：US10570285

申请日：2004-09-02

Applicant: Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

Inventor： Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/78603

Abstract: Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.

Abstract translation: 公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。 准备金属基板（110），使金属基板（110）的表面变平。 在金属基板（110）上形成绝缘膜（120）。 在绝缘膜（120）上形成非晶硅层（130）。 金属层（140）形成在非晶硅层（130）上。 将金属基板（110）上的样品加热并结晶。

公开(公告)号：US20080248218A1

公开(公告)日：2008-10-09

申请号：US12139154

申请日：2008-06-13

Applicant: Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

Inventor： Jin Jang ,  Kyu-Chang Park ,  Sung-Hoon Lim

IPC: C23C16/26 ,  H01J9/00 ,  B05D1/36

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer.

Abstract translation: 提供了一种形成碳纳米管的方法，具有使用该方法形成的碳纳米管的场致发射显示装置以及该场致发射显示装置的制造方法。 形成碳纳米管的方法包括在基板上形成催化金属层，在催化金属层上形成绝缘层，在绝缘层上形成碳纳米管。

公开(公告)号：US20060232521A1

公开(公告)日：2006-10-19

申请号：US11396932

申请日：2006-04-03

Applicant: Jin Jang ,  Jae-Won Choi

Inventor： Jin Jang ,  Jae-Won Choi

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/043

Abstract: Disclosed are driving circuit and method which are used in an Organic Light Emitting Diode (OLED), and more specifically to a driving circuit of an organic light emitting diode and a driving method thereof which use a thin film transistor (TFT) as an active device. The driving circuit and method can uniformly produce luminance of the light emitting element because the driving current is produced by compensating the unevenness of threshold voltage of the active device. Further, the variance of the threshold voltage Vth due to deterioration of the transistor produced according as the driving circuit of the OLED is utilized for a long time is also compensated, thereby increasing life of the display device which applies the driving circuit of the OLED.

Abstract translation: 公开了用于有机发光二极管（OLED）的驱动电路和方法，更具体地说，涉及使用薄膜晶体管（TFT）作为有源器件的有机发光二极管的驱动电路及其驱动方法 。 驱动电路和方法可以均匀地产生发光元件的亮度，因为通过补偿有源器件的阈值电压的不均匀性来产生驱动电流。 此外，由于由于OLED的驱动电路而产生的晶体管的劣化导致的阈值电压V Sub的变化很长时间也被补偿，从而延长了显示装置的使用寿命 应用OLED的驱动电路。