公开(公告)号：US08552494B2

公开(公告)日：2013-10-08

申请号：US12962061

申请日：2010-12-07

申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Jung-Yun Won ,  Hion-Suck Baik ,  Jun-Ho Lee

IPC分类号： H01L27/088

CPC分类号： H01L21/823456 ,  H01L21/823418 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/4236 ,  H01L29/66621

摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

摘要翻译： 提供制造半导体器件的方法。 制备具有活性图案和隔离层图案的基板。 每个隔离层图案的上表面高于每个活动图案的上表面。 在基板上形成具有均匀厚度的间隔层。 蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。 在每个有源图案上形成栅极结构。 对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。 还提供了相关的半导体器件。

公开(公告)号：US20120178231A1

公开(公告)日：2012-07-12

申请号：US13241678

申请日：2011-09-23

申请人： Jin-Bum Kim ,  Young-Pil Kim ,  Hyung-Ik Lee ,  Ki-Hong Kim ,  Eun-Ha Lee ,  Jung-Yun Won ,  Benayad Anass

发明人： Jin-Bum Kim ,  Young-Pil Kim ,  Hyung-Ik Lee ,  Ki-Hong Kim ,  Eun-Ha Lee ,  Jung-Yun Won ,  Benayad Anass

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L21/823807 ,  H01L21/28185 ,  H01L21/28518 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

摘要： Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.

摘要翻译： 提供了制造金属硅化物层和制造具有这种金属硅化物层的半导体器件的方法，其中在一个实施例中，该方法包括以下步骤：在衬底上形成金属层，在衬底上进行第一热处理， 允许衬底和金属层与其它反应物反应以形成第一预金属硅化物层，去除金属层的未反应部分，并在衬底上进行第二热处理以将第一前金属硅化物层改变为 第二预金属硅化物层，然后熔化第二预金属硅化物层以将第二预金属硅化物层改变为金属硅化物层。

公开(公告)号：US07595246B2

公开(公告)日：2009-09-29

申请号：US11636139

申请日：2006-12-08

申请人： Min-Gu Kang ,  Ki-Hong Kim ,  Jin-Bum Kim ,  Jung-Yun Won ,  In-Sun Jung

发明人： Min-Gu Kang ,  Ki-Hong Kim ,  Jin-Bum Kim ,  Jung-Yun Won ,  In-Sun Jung

IPC分类号： H01L21/336

CPC分类号： H01L29/66628 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02642 ,  H01L21/02664 ,  H01L21/26513 ,  H01L27/10873 ,  H01L29/517

摘要： Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.

摘要翻译： 制造场效应晶体管的方法包括在衬底上形成栅极图案。 栅极间隔物形成在栅极图案的侧壁上。 第一层由衬底的表面形成并且在第一温度下使用第一选择性外延生长（SEG）工艺与栅极间隔物接触。 第二层由第一层的表面形成，并在第二温度下使用第二SEG工艺与栅极间隔物接触。 第二个温度低于第一个温度。 第一层和第二层限定升高的源/漏区。

公开(公告)号：US20080206650A1

公开(公告)日：2008-08-28

申请号：US11889176

申请日：2007-08-09

申请人： Jeom-Soo Kim ,  Jin-Bum Kim ,  Yong-Chul Park ,  Duck-Chul Hwang ,  Jong-Hwa Lee

发明人： Jeom-Soo Kim ,  Jin-Bum Kim ,  Yong-Chul Park ,  Duck-Chul Hwang ,  Jong-Hwa Lee

IPC分类号： H01M10/00

CPC分类号： H01M4/131 ,  H01M4/1315 ,  H01M4/136 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  H01M4/60 ,  H01M10/0525 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2004/021

摘要： A rechargeable lithium battery includes a positive electrode including a positive active material being capable of intercalating and deintercalating lithium ions; a negative electrode including a negative active material being capable of intercalating and deintercalating lithium ions; and an electrolyte including a non-aqueous organic solvent and a lithium salt. The positive electrode has a positive active mass density of 3.65 g/cc or more, and the lithium salt includes lithium hexafluorophosphate (LiPF6), lithium tetrafluoroborate (LiBF4), and a lithium imide-based compound. The rechargeable lithium battery has high capacity, excellent cycle-life, and reliability at a high temperature.

摘要翻译： 可再充电锂电池包括正极，其包括能够插入和脱嵌锂离子的正极活性材料; 包含能够嵌入和脱嵌锂离子的负极活性物质的负极; 以及包含非水有机溶剂和锂盐的电解质。 正极具有3.65g / cc以上的正的活性质量密度，锂盐包括六氟磷酸锂（LiPF 6），四氟硼酸锂（LiBF 4 S 4）， 和基于酰亚胺的化合物。 可充电锂电池具有高容量，良好的循环寿命和高温下的可靠性。

公开(公告)号：US20080118835A1

公开(公告)日：2008-05-22

申请号：US11889307

申请日：2007-08-10

申请人： So-Hyun Hur ,  Euy-Young Jung ,  Duck-Chul Hwang ,  Yong-Chul Park ,  Jong-Hwa Lee ,  Jeom-Soo Kim ,  Jae-Yul Ryu ,  Jin-Bum Kim

发明人： So-Hyun Hur ,  Euy-Young Jung ,  Duck-Chul Hwang ,  Yong-Chul Park ,  Jong-Hwa Lee ,  Jeom-Soo Kim ,  Jae-Yul Ryu ,  Jin-Bum Kim

IPC分类号： H01M4/40 ,  H01M4/36 ,  H01M4/44 ,  H01M4/38

CPC分类号： H01M4/525 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/364 ,  H01M4/366 ,  H01M4/505 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0568 ,  Y02E60/122

摘要： The rechargeable lithium battery includes a positive electrode which includes a positive active material, a negative electrode, and an electrolyte which includes a non-aqueous organic solvent and a lithium salt. The positive active material includes a core including at least one of a compound represented by Formula 1 and a compound represented by Formula 2, and a surface-treatment layer which is formed on the core and includes a compound represented by Formula 3. The lithium salt includes LiPF6 and a lithium imide-based compound. LiaNibCocMndMeO2   (1) LihMn2MiO4   (2) M′xPyOz   (3) wherein each of M and M′ is independently selected from the group consisting of an alkali metal, an alkaline-earth metal, a Group 13 element, a Group 14 element, a transition element, a rare earth element, and combinations thereof, 0.95≦a≦1.1, 0≦b≦0.999, 0≦c≦0.999, 0≦d≦0.999, 0.001≦e≦0.2, 0.95≦h≦1.1, 0.001≦i≦0.2, 1≦y≦4, 0≦y≦7, and 2≦z≦30.

摘要翻译： 可再充电锂电池包括正极，其包括正极活性材料，负极和包含非水有机溶剂和锂盐的电解质。 正极活性物质包括包含由式1表示的化合物和由式2表示的化合物中的至少一种的核心和形成在芯上并包含由式3表示的化合物的表面处理层。锂盐 包括LiPF 6和基于酰亚胺的化合物。 <？in-line-formula description =“In-line Formulas”end =“lead”？> Li Ni Ni Ni Ni> Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn Mn （1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> Li （2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> M' （3）<？in-line-formula description =“In-line 式“end =”tail“？>其中M和M'各自独立地选自碱金属，碱土金属，第13族元素，第14族元素，过渡元素，稀有金属 地球元素及其组合，0.95 <= a <= 1.1,0 <= b <= 0.999,0 <= c <= 0.999,0 <= d <= 0.999 0.001 <= e <= 0.2,0.95 < h <= 1.1，0.001 <= i <= 0.2,1 <= y <= 4,0 <= y <= 7，2 <= z <= 30。

公开(公告)号：US10381126B2

公开(公告)日：2019-08-13

申请号：US12684868

申请日：2010-01-08

申请人： Jin-Bum Kim

发明人： Jin-Bum Kim

IPC分类号： H01M4/04 ,  H01M4/13 ,  H01M4/52 ,  H01M4/62 ,  H01B1/24 ,  H01M4/131 ,  H01M4/139 ,  H01M4/525 ,  H01M10/0525

摘要： A positive electrode for a rechargeable lithium battery and a rechargeable lithium battery including the same. The positive electrode includes a positive active material, a binder, and a conductive material, wherein a weight ratio of the binder and conductive material, and the positive active material, ranges from 3:97 to 5:95 wt %, and a weight ratio of the binder and the conductive material ranges from 1.5 to 3:1.

公开(公告)号：US20120171826A1

公开(公告)日：2012-07-05

申请号：US13243147

申请日：2011-09-23

申请人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

发明人： Jin-Bum Kim ,  Chul-Sung Kim ,  Yu-Gyun Shin ,  Dae-Yong Kim ,  Joon-Gon Lee ,  Kwang-Young Lee

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814

摘要： A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

摘要翻译： 制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底，在第一区域中形成第一栅极和第一源极和漏极区域，并在第一区域中形成第二栅极和第二源极和漏极区域 在所述第二源极和漏极区域中形成外延层，在所述第一源极和漏极区域中形成第一金属硅化物层，在所述第一区域和所述第二区域上形成层间电介质层，形成多个接触孔， 第一金属硅化物层和外延层，同时穿透层间电介质层，在暴露的外延层中形成第二金属硅化物层，并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。

公开(公告)号：US20120135576A1

公开(公告)日：2012-05-31

申请号：US13242784

申请日：2011-09-23

申请人： Hyun-Jung Lee ,  Young-Pil Kim ,  Jin-Bum Kim ,  Sang-Bom Kang ,  Kwan-Yong Lim

发明人： Hyun-Jung Lee ,  Young-Pil Kim ,  Jin-Bum Kim ,  Sang-Bom Kang ,  Kwan-Yong Lim

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L29/1054 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/7849

摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the gate structure, respectively; forming a first semiconductor pattern in the first and second trenches; removing the dummy gate pattern to expose a portion of the channel region; forming a recessed channel region by recessing the portion of the channel region; and forming a second semiconductor pattern in the recessed region.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 该方法包括提供具有沟道区的衬底; 在基板上形成包括虚拟栅极图案的栅极结构; 通过分别在栅极结构的两侧凹陷衬底来形成第一和第二沟槽; 在所述第一和第二沟槽中形成第一半导体图案; 去除伪栅极图案以暴露沟道区域的一部分; 通过使所述通道区域的所述部分凹陷来形成凹陷通道区域; 以及在凹陷区域中形成第二半导体图案。

公开(公告)号：US20110045341A1

公开(公告)日：2011-02-24

申请号：US12862625

申请日：2010-08-24

申请人： Hyo-Rim Bak ,  Jin-Bum Kim ,  Wan-Mook Lim ,  Hae-Kwon Yoon ,  Myoung-Han Ryu

发明人： Hyo-Rim Bak ,  Jin-Bum Kim ,  Wan-Mook Lim ,  Hae-Kwon Yoon ,  Myoung-Han Ryu

IPC分类号： H01M2/02 ,  H01M4/02

CPC分类号： H01M10/4235 ,  H01M2/023 ,  H01M10/651 ,  H01M10/654

摘要： A secondary battery that includes a cylindrical can, an electrode assembly arranged in a jelly-role configuration within the cylindrical can and having a core extending about an axis thereof and a hollow center pin arranged within the core of the electrode assembly and having an inner diameter and an outer diameter, the outer diameter forming ones of a pair of radial lengths diametrically opposite from each other, each of said pair of radial lengths extending from the outer diameter of the center pin to an external surface of the core, wherein the sum of the pair of radial lengths is in the range of 5% to 54% of the inner diameter of the center pin.

摘要翻译： 一种二次电池，其包括圆筒形罐，电极组件，其布置在圆筒形罐内的果冻状结构中，并且具有围绕其轴线延伸的芯和布置在电极组件的芯部内的中空中心销，并且具有内径 外直径形成一对径向长度彼此直径相对的外径，所述一对径向长度从中心销的外径延伸到芯的外表面，其中， 一对径向长度在中心销的内径的5％至54％的范围内。

公开(公告)号：US08808915B2

公开(公告)日：2014-08-19

申请号：US11889307

申请日：2007-08-10

申请人： So-Hyun Hur ,  Euy-Young Jung ,  Duck-Chul Hwang ,  Yong-Chul Park ,  Jong-Hwa Lee ,  Jeom-Soo Kim ,  Jae-Yul Ryu ,  Jin-Bum Kim

发明人： So-Hyun Hur ,  Euy-Young Jung ,  Duck-Chul Hwang ,  Yong-Chul Park ,  Jong-Hwa Lee ,  Jeom-Soo Kim ,  Jae-Yul Ryu ,  Jin-Bum Kim

IPC分类号： H01M4/13 ,  H01M10/052 ,  H01M4/36 ,  H01M4/131 ,  H01M4/505 ,  H01M10/0525 ,  H01M10/0568 ,  H01M4/525 ,  H01M4/134 ,  H01M4/133

CPC分类号： H01M4/525 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/364 ,  H01M4/366 ,  H01M4/505 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0568 ,  Y02E60/122

摘要： The rechargeable lithium battery includes a positive electrode which includes a positive active material, a negative electrode, and an electrolyte which includes a non-aqueous organic solvent and a lithium salt. The positive active material includes a core including at least one of a compound represented by Formula 1 and a compound represented by Formula 2, and a surface-treatment layer which is formed on the core and includes a compound represented by Formula 3. The lithium salt includes LiPF6 and a lithium imide-based compound. LiaNibCocMndMeO2  (1) LihMn2MiO4  (2) M′xPyOz  (3) wherein each of M and M′ is independently selected from the group consisting of an alkali metal, an alkaline-earth metal, a Group 13 element, a Group 14 element, a transition element, a rare earth element, and combinations thereof, 0.95≦a≦1.1, 0≦b≦0.999, 0≦c≦0.999, 0≦d≦0.999, 0.001≦e≦0.2, 0.95≦h≦1.1, 0.001≦i≦0.2, 1≦y≦4, 0≦y≦7, and 2≦z≦30.

摘要翻译： 可再充电锂电池包括正极，其包括正极活性材料，负极和包含非水有机溶剂和锂盐的电解质。 正极活性物质包括包含由式1表示的化合物和由式2表示的化合物中的至少一种的核心和形成在芯上并包含由式3表示的化合物的表面处理层。锂盐 包括LiPF 6和基于酰亚胺的化合物。 LiaNibCocMndMeO2（1）LihMn2MiO4（2）M'xPyOz（3）其中M和M'各自独立地选自碱金属，碱土金属，第13族元素，第14族元素， 过渡元素，稀土元素及其组合，0.95＆nlE; a＆nlE; 1.1,0和nlE; b＆nlE; 0.999,0和nlE; c＆nlE; 0.999,0和nlE; d＆nlE; 0.999,0.001和nlE; e＆nlE; 0.2,0.95＆ ，0.001＆nlE; i＆nlE; 0.2,1＆nlE; y＆nlE; 4,0＆nlE; y＆nlE; 7和2＆amp; nlE; z＆nlE; 30。