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公开(公告)号：US08107054B2
公开(公告)日：2012-01-31
申请号：US12210514
申请日：2008-09-15
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。
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12.发明申请Method of qualifying a diffraction grating and method of manufacturing an optical element 审中-公开限定衍射光栅的方法和制造光学元件的方法公开(公告)号：US20060274325A1
公开(公告)日：2006-12-07
申请号：US11439719
申请日：2006-05-23
IPC分类号： G01B9/02
CPC分类号： G02B5/1861 , G01B9/02039 , G01B9/02057 , G01B11/2441 , G01B2290/70 , G02B27/0944 , G02B27/42 , G02B27/4233
摘要： A method of qualifying a diffraction grating comprises performing plural measurements by illuminating a region of the grating with a beam of measuring light and detecting an intensity of measuring light diffracted by the grating into a 0th diffraction order. A wavelength of the measuring light or a polarization of the measuring light or an angle of incidence of the measuring light onto the diffraction grating is varied between subsequent measurements. A shape parameter of diffracting elements forming the grating comprises a pitch, height or width of structural features of the diffracting elements. The shape parameter is advantageously used in analyzing interferometric measurements performed on optical surfaces during manufacture of optical elements of a high accuracy.
摘要翻译： 限定衍射光栅的方法包括通过用测量光束照射光栅的区域并且将由光栅衍射的测量光的强度检测为第0衍射级来执行多个测量。 测量光的波长或测量光的偏振或测量光入射到衍射光栅上的入射角在随后的测量之间变化。 形成光栅的衍射元件的形状参数包括衍射元件的结构特征的节距，高度或宽度。 形状参数有利地用于分析在高精度的光学元件的制造期间在光学表面上执行的干涉测量。
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公开(公告)号：US09606339B2
公开(公告)日：2017-03-28
申请号：US13367116
申请日：2012-02-06
申请人： Jochen Hetzler , Ralf Mueller , Wolfgang Singer
发明人： Jochen Hetzler , Ralf Mueller , Wolfgang Singer
CPC分类号： G02B17/0647 , G02B13/143 , G03F7/70233 , G03F7/70958
摘要： A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S′). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S′) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.
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14.发明授权公开(公告)号：US08617774B2
公开(公告)日：2013-12-31
申请号：US13266920
申请日：2010-04-10
申请人： Norbert Kerwien , Jochen Hetzler
发明人： Norbert Kerwien , Jochen Hetzler
CPC分类号： G03F9/7019 , G03F1/42 , G03F7/70516 , G03F9/7011
摘要： A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.
摘要翻译： 用于校准光刻掩模上的测量结构的位置测量的装置的方法包括以下步骤：通过借助于干涉测量来确定衍射结构相对于彼此的位置来确定包括其上布置的衍射结构的校准掩模，确定 通过该装置相对于彼此设置在校准掩模上的测量结构的位置，并且通过为测量结构确定的位置以及为衍射结构确定的位置来校准装置。
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公开(公告)号：US20050123840A1
公开(公告)日：2005-06-09
申请号：US10984868
申请日：2004-11-10
申请人： Michael Totzeck , Toralf Gruner , Jochen Hetzler
发明人： Michael Totzeck , Toralf Gruner , Jochen Hetzler
CPC分类号： G03F7/70566 , G03F1/38 , G03F1/50
摘要： A mask (20) for use in a microlithographic projection exposure apparatus (10) has a support (28) on which a pattern of opaque structures (32) is applied. The intermediate spaces (36, 36′) remaining between the structures (32c) are filled with a liquid or solid dielectric material (38, 38′). This increases the polarisation dependency of the diffraction efficiency, so that the mask can be used as a polarizer.
摘要翻译： 在微光刻投影曝光装置（10）中使用的掩模（20）具有支撑体（28），在其上施加不透明结构（32）的图案。 残留在结构（32c）之间的中间空间（36,36'）填充有液体或固体电介质材料（38,38'）。 这增加了衍射效率的极化依赖性，使得掩模可以用作偏振器。
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公开(公告)号：US08982325B2
公开(公告)日：2015-03-17
申请号：US13333350
申请日：2011-12-21
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03F7/20
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。
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17.发明申请Projection Exposure Tool for Microlithography and Method for Microlithographic Exposure 审中-公开用于微光刻的投影曝光工具和微光刻曝光方法公开(公告)号：US20130182264A1
公开(公告)日：2013-07-18
申请号：US13788042
申请日：2013-03-07
IPC分类号： G03F7/20
CPC分类号： G03F7/70133 , G03F7/70608 , G03F7/70733 , G03F9/7003 , G03F9/7034 , G03F9/7049
摘要： A projection exposure tool for microlithography for exposing a substrate is disclosed. The tool includes a projection objective. The tool also includes an optical measuring apparatus for determining a surface topography of the substrate before the substrate is exposed. The measuring apparatus has a measuring beam path which extends outside of the projection objective. The measuring apparatus is a wavefront measuring apparatus configured to determine topography measurement values simultaneously at a number of points on the substrate surface.
摘要翻译： 公开了一种用于曝光衬底的用于微光刻的投影曝光工具。 该工具包括投影物镜。 该工具还包括用于在衬底暴露之前确定衬底的表面形貌的光学测量装置。 测量装置具有延伸到投影物镜外部的测量光束路径。 所述测量装置是波面测量装置，其被配置为在所述基板表面上的多个点处同时确定地形测量值。
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公开(公告)号：US20100134768A1
公开(公告)日：2010-06-03
申请号：US12623744
申请日：2009-11-23
申请人： Jochen Hetzler , Toralf Gruner
发明人： Jochen Hetzler , Toralf Gruner
IPC分类号： G03B27/68
CPC分类号： G03F7/70825 , G03F7/70258 , G03F7/70308
摘要： The disclosure relates to a projection exposure system for microlithography, which includes at least one optical system that has at least one optical element with at least two aspherical surfaces essentially arranged rigidly relative to each other.
摘要翻译： 本公开涉及一种用于微光刻的投影曝光系统，其包括至少一个光学系统，该光学系统具有至少一个具有至少两个相对于彼此刚性地布置的非球面的光学元件。
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19.发明申请公开(公告)号：US20080137090A1
公开(公告)日：2008-06-12
申请号：US11795598
申请日：2006-01-20
申请人： Jochen Hetzler , Susanne Beder , Heiko Feldmann
发明人： Jochen Hetzler , Susanne Beder , Heiko Feldmann
CPC分类号： G01B9/021 , G01B9/02039 , G01B11/2441
摘要： A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.
摘要翻译： 一种制造光学元件（5）的方法包括：使用将测量光（23a）引导到光学表面上的干涉仪（1）测试光学元件的光学表面（3），其中测量光穿过两个连续的全息图（44， 48）设置在光学表面上游的测量光的光路中。
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