公开(公告)号：US08617774B2

公开(公告)日：2013-12-31

申请号：US13266920

申请日：2010-04-10

申请人： Norbert Kerwien ,  Jochen Hetzler

发明人： Norbert Kerwien ,  Jochen Hetzler

IPC分类号： G03F9/00 ,  G03F1/44

CPC分类号： G03F9/7019 ,  G03F1/42 ,  G03F7/70516 ,  G03F9/7011

摘要： A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.

摘要翻译： 用于校准光刻掩模上的测量结构的位置测量的装置的方法包括以下步骤：通过借助于干涉测量来确定衍射结构相对于彼此的位置来确定包括其上布置的衍射结构的校准掩模，确定 通过该装置相对于彼此设置在校准掩模上的测量结构的位置，并且通过为测量结构确定的位置以及为衍射结构确定的位置来校准装置。

公开(公告)号：US20120160007A1

公开(公告)日：2012-06-28

申请号：US13266920

申请日：2010-04-10

申请人： Norbert Kerwien ,  Jochen Hetzler

发明人： Norbert Kerwien ,  Jochen Hetzler

IPC分类号： G01P21/00

CPC分类号： G03F9/7019 ,  G03F1/42 ,  G03F7/70516 ,  G03F9/7011

摘要： A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.

摘要翻译： 用于校准光刻掩模上的测量结构的位置测量的装置的方法包括以下步骤：通过借助于干涉测量来确定衍射结构相对于彼此的位置来确定包括其上布置的衍射结构的校准掩模，确定 通过该装置相对于彼此设置在校准掩模上的测量结构的位置，并且通过为测量结构确定的位置以及为衍射结构确定的位置来校准装置。

公开(公告)号：US07848031B2

公开(公告)日：2010-12-07

申请号：US11795598

申请日：2006-01-20

申请人： Jochen Hetzler ,  Susanne Beder ,  Heiko Feldmann

发明人： Jochen Hetzler ,  Susanne Beder ,  Heiko Feldmann

IPC分类号： G02B3/02

CPC分类号： G01B9/021 ,  G01B9/02039 ,  G01B11/2441

摘要： A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.

摘要翻译： 一种制造光学元件（5）的方法包括使用将测量光（23a）引导到光学表面上的干涉仪1a来测试光学元件的光学表面（3），其中测量光穿过两个连续的全息图（44,48） 设置在光学表面上游的测量光束的光束路径中。

公开(公告)号：US20100201959A1

公开(公告)日：2010-08-12

申请号：US12723496

申请日：2010-03-12

申请人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

发明人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G02B1/02 ,  G02B21/33 ,  G03F7/70941

摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

摘要翻译： 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

公开(公告)号：US20090073398A1

公开(公告)日：2009-03-19

申请号：US12210514

申请日：2008-09-15

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/52 ,  G03B27/72

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US20130252146A1

公开(公告)日：2013-09-26

申请号：US13785707

申请日：2013-03-05

申请人： Jochen Hetzler ,  Aksel Goehnermeier

发明人： Jochen Hetzler ,  Aksel Goehnermeier

IPC分类号： G01B11/14

CPC分类号： G03F7/70675 ,  G01B9/02015 ,  G01B11/14 ,  G01B2290/65 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70683 ,  G03F7/70733 ,  G03F7/7085 ,  G03F9/7003 ,  G03F9/7049

摘要： A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

摘要翻译： 一种用于微光刻的投影曝光工具，用于将图像提供衬底的掩模结构成像到待构造的衬底上，包括：测量装置，被配置为确定设置在一个衬底的表面上的测量结构相对于彼此的相对位置 相对于基板表面的至少一个横向方向，并且由此同时测量相对于彼此横向偏移设置的多个测量结构。

公开(公告)号：US08436982B2

公开(公告)日：2013-05-07

申请号：US12723496

申请日：2010-03-12

申请人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

发明人： Helmut Beierl ,  Heiko Feldmann ,  Jochen Hetzler ,  Michael Totzeck

IPC分类号： G03B27/54 ,  G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70341 ,  G02B1/02 ,  G02B21/33 ,  G03F7/70941

摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.

摘要翻译： 用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。 光学组件包括靠近图像平面设置的至少一个光学终端元件。 第一浸没液体设置在光学终端元件的图像取向表面上。 第二浸没液体设置在光学终端元件的物体取向表面上。 面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

公开(公告)号：US20120092637A1

公开(公告)日：2012-04-19

申请号：US13333350

申请日：2011-12-21

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/54

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US08107054B2

公开(公告)日：2012-01-31

申请号：US12210514

申请日：2008-09-15

申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

IPC分类号： G03B27/72 ,  G03B27/68 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54 ,  G03B27/32

CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

公开(公告)号：US20060274325A1

公开(公告)日：2006-12-07

申请号：US11439719

申请日：2006-05-23

申请人： Jochen Hetzler ,  Ulrich Andiel ,  Hartmut Brandenburg

发明人： Jochen Hetzler ,  Ulrich Andiel ,  Hartmut Brandenburg

IPC分类号： G01B9/02

CPC分类号： G02B5/1861 ,  G01B9/02039 ,  G01B9/02057 ,  G01B11/2441 ,  G01B2290/70 ,  G02B27/0944 ,  G02B27/42 ,  G02B27/4233

摘要： A method of qualifying a diffraction grating comprises performing plural measurements by illuminating a region of the grating with a beam of measuring light and detecting an intensity of measuring light diffracted by the grating into a 0th diffraction order. A wavelength of the measuring light or a polarization of the measuring light or an angle of incidence of the measuring light onto the diffraction grating is varied between subsequent measurements. A shape parameter of diffracting elements forming the grating comprises a pitch, height or width of structural features of the diffracting elements. The shape parameter is advantageously used in analyzing interferometric measurements performed on optical surfaces during manufacture of optical elements of a high accuracy.

摘要翻译： 限定衍射光栅的方法包括通过用测量光束照射光栅的区域并且将由光栅衍射的测量光的强度检测为第0衍射级来执行多个测量。 测量光的波长或测量光的偏振或测量光入射到衍射光栅上的入射角在随后的测量之间变化。 形成光栅的衍射元件的形状参数包括衍射元件的结构特征的节距，高度或宽度。 形状参数有利地用于分析在高精度的光学元件的制造期间在光学表面上执行的干涉测量。