摘要:
A low dielectric constant polymer, comprising monomeric units derived from a compound having the general formula I (R1—R2)n—Si—(X1)4-n, wherein each X1 is independently selected from hydrogen and inorganic leaving groups, R2 is an optional group and comprises an alkylene having 1 to 6 carbon atoms or an arylene, R1 is a polycycloalkyl group and n is an integer 1 to 3. The polymer has excellent electrical and mechanical properties.
摘要:
A method for preparation and polymerization of siloxane monomers of Formula I is presented. The synthesis includes the selective reaction between silanol containing unit and alkoxy containing units in the presence of basic catalyst. The siloxane monomers of the invention can be used for preparation of siloxane polymers with good flexibility and cracking threshold, and functional sites, useful for applications requiring low metal content in semiconductor industry.
摘要:
A method for preparation and polymerization of siloxane monomers of Formula I is presented. The synthesis includes the selective reaction between silanol containing unit and alkoxy containing units in the presence of basic catalyst. The siloxane monomers of the invention can be used for preparation of siloxane polymers with good flexibility and cracking threshold, and functional sites, useful for applications requiring low metal content in semiconductor industry.
摘要:
A method for producing a polymer for semiconductor optoelectronics, comprising the steps of providing a monomer is produced having the formula: wherein: R1 is a hydrolysable group R2 is hydrogen, and R3 is a bridging linear or branched bivalent hydrocarbyl group, said monomer being produced by hydrosilylation of the corresponding starting materials, and homo- or copolymerizing the monomer to produce a polymer.
摘要:
Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.
摘要:
Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability. They are useful as dielectric films for semiconductor industry and for optical applications, including high-RI materials in CMOS image sensors.
摘要:
A novel novolac prepared by acid catalyzed condensation between biphenols or bisphenofluorenes and fluorenone is presented. The polymers exhibit excellent oxidative thermal stability and high carbon content, suitable for dielectric, etch stop applications as spin-on material.
摘要:
A novel novolac prepared by acid catalyzed condensation between biphenols or bisphenofluorenes and fluorenone is presented. The polymers exhibit excellent oxidative thermal stability and high carbon content, suitable for dielectric, etch stop applications as spin-on material.