-
公开(公告)号：US20090159890A1
公开(公告)日：2009-06-25
申请号：US12336996
申请日：2008-12-17
IPC分类号： H01L33/00
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。
-
12.发明授权Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权具有结晶区域的氧化物半导体的半导体装置及其制造方法公开(公告)号：US09093328B2
公开(公告)日：2015-07-28
申请号：US12938533
申请日：2010-11-03
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L29/12 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/02603 , H01L27/0883 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
摘要翻译： 晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。 使用从氧化物半导体去除作为电子给体（供体）的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。 可以通过控制一对导电膜的电位来控制晶体管的电特性，所述一对导电膜相对于氧化物半导体层彼此相对设置，每个具有布置在其间的绝缘膜，使得沟道的位置 确定在氧化物半导体层中形成的氧化物半导体层。
-
公开(公告)号：US08907881B2
公开(公告)日：2014-12-09
申请号：US13078209
申请日：2011-04-01
申请人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
发明人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
CPC分类号： G09G3/3607 , G02F1/13452 , G06F3/042 , G06F3/044 , G06F3/047 , G09G3/3413 , G09G3/3426 , G09G3/3659 , G09G3/3677 , G09G3/3688 , G09G2300/0426 , G09G2300/0814 , G09G2310/0205 , G09G2310/0235 , G09G2310/024 , G09G2320/0242
摘要： In the liquid crystal display device, image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion where input of image signals is controlled by transistors including polycrystalline semiconductors or single crystal semiconductors in channel formation regions. Thus, the image quality of the liquid crystal display device can be improved.
摘要翻译： 在液晶显示装置中，图像信号被同时提供给像素部分中排列成矩阵的像素中的多个像素中的像素部分，其中图像信号的输入由沟道形成区域中包括多晶半导体或单晶半导体的晶体管控制。 因此，可以提高液晶显示装置的图像质量。
-
公开(公告)号：US08421068B2
公开(公告)日：2013-04-16
申请号：US12904565
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/26 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78609 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。
-
公开(公告)号：US07977678B2
公开(公告)日：2011-07-12
申请号：US12336996
申请日：2008-12-17
IPC分类号： H01L29/04
CPC分类号： H01L27/3276 , H01L27/124 , H01L27/1266
摘要： A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.
摘要翻译： 提供一种使用能够抑制由于布线的电位下降引起的像素之间的亮度不均匀的发光元件的半导体显示装置。 供给电源电位的电源线在布置有多个像素的显示区域中彼此电连接。 此外，在用于将显示区域中的电源线彼此电连接并且包括在像素中的晶体管的栅电极的布线（辅助电源线）上形成层间绝缘膜; 并且在辅助电源线和栅电极之间形成的层间绝缘膜上形成电源线。 此外，形成在层间绝缘膜上的布线（辅助布线）与辅助电源线电连接或直接连接。
-
16.发明申请公开(公告)号：US20110090204A1
公开(公告)日：2011-04-21
申请号：US12904634
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
CPC分类号： G02F1/1368 , G09G3/3611 , G09G3/3648 , G09G3/3674 , G09G3/3677 , G09G5/18 , G09G2310/0286 , G09G2320/103 , G09G2330/021 , G09G2330/022 , G09G2330/027 , H01L27/1225 , H01L29/7869
摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.
摘要翻译： 液晶显示装置包括：驱动电路部分; 像素部分; 信号产生电路，用于产生用于驱动驱动电路部分的控制信号和提供给像素部分的图像信号; 存储电路; 比较电路，用于检测在存储电路中为各个帧周期存储的图像信号中的一系列帧周期的图像信号的差异; 选择电路，当在比较电路中检测到差异时，选择并输出用于一系列帧周期的图像信号; 以及显示控制电路，当在比较电路中检测到差异时，将从选择电路输出的控制信号和图像信号提供给驱动电路部分，并且当差值为 在比较电路中未检测到。
-
公开(公告)号：US08890781B2
公开(公告)日：2014-11-18
申请号：US12906538
申请日：2010-10-18
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
CPC分类号： G09G3/3208 , G09G3/2003 , G09G3/3233 , G09G2330/021 , H01L27/1225 , H01L27/3262 , H01L27/3276 , H01L29/78609 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
摘要翻译： 目的是提供一种降低功耗的显示装置，以提供其功耗降低并且能够在黑暗处长期使用的自发光显示装置。 使用其中使用高度纯化的氧化物半导体并且像素可以保持一定状态（已经写入视频信号的状态）的薄膜晶体管形成电路。 结果，即使在显示静止图像的情况下，也能够容易地进行稳定的动作。 此外，可以延长驱动电路的操作间隔，这导致显示装置的功耗的降低。 此外，在自发光显示装置的像素部分中使用光存储材料来存储光，由此显示装置可以在黑暗的地方长时间使用。
-
公开(公告)号：US08830278B2
公开(公告)日：2014-09-09
申请号：US13078204
申请日：2011-04-01
申请人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
发明人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
IPC分类号： G09G5/10
CPC分类号： H01L27/1266 , G02F1/13454 , G02F1/13624 , G02F1/136286 , G02F1/1368 , G02F2202/103 , G02F2202/104 , G09G3/342 , G09G3/3659 , G09G3/3677 , G09G2300/0443 , G09G2300/0814 , G09G2310/0205 , G09G2310/0235 , H01L27/1214 , H01L29/04 , H01L29/78696
摘要： In a liquid crystal display device, image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion where input of image signals is controlled by transistors including amorphous semiconductors or microcrystalline semiconductors in channel formation regions. Thus, the frequency of input of image signals to each pixel can be increased without changing the response speed of the transistors or the like included in the liquid crystal display device.
摘要翻译： 在液晶显示装置中，图像信号同时提供给像素部分中排列成矩阵的像素中设置的像素部分中的像素部分，其中图像信号的输入由沟道形成区域中的非晶半导体或微晶半导体的晶体管控制。 因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。
-
19.发明授权公开(公告)号：US08546161B2
公开(公告)日：2013-10-01
申请号：US13226822
申请日：2011-09-07
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , G02F1/13394 , G02F1/13458 , G02F1/136227 , H01L27/1248 , H01L29/41733
摘要： Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability.
摘要翻译： 通过一次光刻步骤和一次蚀刻步骤进行包括栅极布线上的部分的半导体层的蚀刻和用于像素电极和漏极之间的连接的接触孔的形成; 因此，光刻步骤的数量减少。 栅极布线的暴露部分被绝缘层覆盖，并且该绝缘层还用作用于保持液晶层的空间的间隔物。 通过减少光刻步骤的数量，可以以更低的成本和更高的生产率提供液晶显示装置。 使用半导体层的氧化物半导体可以实现低功耗，高可靠性的液晶显示装置。
-
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。
-
-
-
-
-
-
-
-
-
搜索结果
1520 条记录 (耗时 0.095 秒)
