中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.018 seconds)

    Apparatus and methods for detecting overlay errors using scatterometry
    12.
    发明授权
    Apparatus and methods for detecting overlay errors using scatterometry 有权
    使用散射法检测重叠误差的装置和方法

    公开(公告)号：US09347879B2

    公开(公告)日：2016-05-24

    申请号：US14873120

    申请日：2015-10-01

    Applicant: KLA-Tencor Corporation

    Inventor： Michael Adel ,  Walter D. Mieher ,  Mark Ghinovker

    IPC: H01L23/58 ,  G01N21/47 ,  G01N21/95

    CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

    Abstract: Disclosed is a scatterometry mark for determining an overlay error, critical dimension, or profile of the mark. The mark includes a first plurality of periodic structures on a first layer, a second plurality of periodic structures on a second layer, and a third plurality of periodic structures on a third layer that is underneath the first and second layer. The third periodic structures are perpendicular to the first and second structures, and the third periodic structures have one or more characteristics so as to result in a plurality of lower structures beneath the third periodic structures being screened from significantly affecting at least part of a spectrum of a plurality of scattered signals detected from the first and second periodic structures for determining an overlay error, critical dimension, or profile of the first and second periodic structures or at least one of such detected scattered signals.

    Abstract translation: 公开了用于确定标记的重叠误差，临界尺寸或轮廓的散射测量标记。 标记包括第一层上的第一多个周期性结构，第二层上的第二多个周期性结构以及位于第一和第二层下面的第三层上的第三多个周期性结构。 第三周期性结构垂直于第一和第二结构，并且第三周期结构具有一个或多个特性，以便导致第三周期结构下方的多个下部结构被屏蔽，从而显着影响至少部分频谱 从第一和第二周期结构检测的多个散射信号，用于确定第一和第二周期结构的重叠误差，临界尺寸或轮廓，或这些检测到的散射信号中的至少一个。

    Apodization for pupil imaging scatterometry
    13.
    发明授权
    Apodization for pupil imaging scatterometry 有权
    瞳孔成像散射的变迹

    公开(公告)号：US09091650B2

    公开(公告)日：2015-07-28

    申请号：US13936529

    申请日：2013-07-08

    Applicant: KLA-Tencor Corporation

    Inventor： Andrew V. Hill ,  Amnon Manassen ,  Barak Bringoltz ,  Ohad Bachar ,  Mark Ghinovker ,  Zeev Bomzon ,  Daniel Kandel

    IPC: G01B11/14 ,  G01N21/55 ,  G03F7/20

    CPC classification number: G02B27/58 ,  G01B11/00 ,  G01N21/47 ,  G01N21/55 ,  G01N2201/06113 ,  G01N2201/068 ,  G03F7/70625 ,  G03F7/70633

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    Apparatus for measuring overlay errors
    16.
    发明授权
    Apparatus for measuring overlay errors 有权

    公开(公告)号：US09702693B2

    公开(公告)日：2017-07-11

    申请号：US15136855

    申请日：2016-04-22

    Applicant: KLA-Tencor Corporation

    Inventor： Mark Ghinovker ,  Michael Adel ,  Walter D. Mieher ,  Ady Levy ,  Dan Wack

    IPC: G03F7/20 ,  G01B11/27 ,  G01N21/47 ,  G01N21/95 ,  H01L21/68 ,  H01L23/544

    CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

    Abstract: A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.

    APPARATUS FOR MEASURING OVERLAY ERRORS
    17.
    发明申请
    APPARATUS FOR MEASURING OVERLAY ERRORS 有权
    用于测量重叠错误的装置

    公开(公告)号：US20160313116A1

    公开(公告)日：2016-10-27

    申请号：US15136855

    申请日：2016-04-22

    Applicant: KLA-Tencor Corporation

    Inventor： Mark Ghinovker ,  Michael Adel ,  Walter D. Mieher ,  Ady Levy ,  Dan Wack

    IPC: G01B11/27

    CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

    Abstract: A metrology system for determining overlay is disclosed. The system includes an optical assembly for capturing images of an overlay mark and a computer for analyzing the captured images to determine whether there is an overlay error. The mark comprises first and second regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a first direction, and include a periodic structure having coarsely segmented elements. The mark comprises third and fourth regions that each include at least two separately generated working zones, juxtaposed relative to one another, configured to provide overlay information in a second direction, and include a periodic structure having coarsely segmented elements. Working zones of the first and second regions are diagonally opposed and spatially offset relative to one another, and the working zones of the third and fourth regions are diagonally opposed and spatially offset relative to one another.

    Abstract translation: 公开了一种用于确定覆盖层的计量系统。 该系统包括用于捕获覆盖标记的图像的光学组件和用于分析所捕获图像的计算机，以确定是否存在重叠错误。 标记包括第一和第二区域，每个区域包括至少两个单独生成的工作区域，其相对于彼此并置，被配置为在第一方向上提供覆盖信息，并且包括具有粗分段元素的周期性结构。 标记包括第三和第四区域，每个区域包括相对于彼此并置的至少两个单独生成的工作区域，其被配置为在第二方向上提供覆盖信息，并且包括具有粗分段元素的周期性结构。 第一区域和第二区域的工作区域相对于彼此对角地相对并且在空间上偏移，并且第三区域和第四区域的工作区域相对于彼此对角地相对并且在空间上偏移。

    TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS
    18.
    发明申请
    TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS 审中-公开
    目标和过程灵敏度分析要求

    公开(公告)号：US20160042105A1

    公开(公告)日：2016-02-11

    申请号：US14919954

    申请日：2015-10-22

    Applicant: KLA-Tencor Corporation

    Inventor： Michael E. Adel ,  Nuriel Amir ,  Mark Ghinovker ,  Tal Shusterman ,  David Gready ,  Sergey Borodyansky

    IPC: G06F17/50

    Abstract: Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.

    Abstract translation: 提供系统和方法，根据外部要求或内部开发和验证需求，将目标，过程和度量配置灵敏度分析到广泛的参数。 系统包括以下要素。 输入模块被布置成接收与目标相关的参数，目标计量条件和生产过程，以产生目标数据。 计量模拟单元被设置为模拟来自目标数据的目标的度量测量并且生成量化模拟目标测量的多个度量。 灵敏度分析模块被布置为导出度量对参数的功能依赖性并且相对于导出的功能依赖性来定义参数的所需不确定性。 最后，设置目标优化模块以对目标和目标计量条件进行相对于模拟目标测量的排序。

    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS
    20.
    发明申请
    REDUCTION OR ELIMINATION OF PATTERN PLACEMENT ERROR IN METROLOGY MEASUREMENTS 有权

    公开(公告)号：US20210149296A1

    公开(公告)日：2021-05-20

    申请号：US17161645

    申请日：2021-01-28

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Yoel Feler ,  Vladimir Levinski ,  Roel Gronheid ,  Sharon Aharon ,  Evgeni Gurevich ,  Anna Golotsvan ,  Mark Ghinovker

    IPC: G03F1/84 ,  G03F7/20 ,  G01N21/00 ,  G03F1/44 ,  G06F30/39 ,  G03F1/26

    Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

Patent Agency Ranking