公开(公告)号：US20160245741A1

公开(公告)日：2016-08-25

申请号：US14833370

申请日：2015-08-24

Applicant: KLA-Tencor Corporation

Inventor： Shankar Krishnan ,  Guorong V. Zhuang ,  David Y. Wang ,  Xuefeng Liu

IPC: G01N21/25 ,  G01N21/95 ,  G01J3/02

CPC classification number: G01N21/255 ,  G01J3/0205 ,  G01J3/0208 ,  G01J3/18 ,  G01J3/2803 ,  G01J3/42 ,  G01J2003/425 ,  G01N21/211 ,  G01N21/55 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/06113 ,  G01N2201/068

Abstract: Methods and systems for performing broadband spectroscopic metrology with reduced sensitivity to focus errors are presented herein. Significant reductions in sensitivity to focus position error are achieved by imaging the measurement spot onto the detector such that the direction aligned with the plane of incidence on the wafer surface is oriented perpendicular to the direction of wavelength dispersion on the detector surface. This reduction in focus error sensitivity enables reduced focus accuracy and repeatability requirements, faster focus times, and reduced sensitivity to wavelength errors without compromising measurement accuracy. In a further aspect, the dimension of illumination field projected on the wafer plane in the direction perpendicular to the plane of incidence is adjusted to optimize the resulting measurement accuracy and speed based on the nature of target under measurement.

Abstract translation: 本文介绍了对聚焦误差灵敏度降低的宽带光谱测量方法和系统。 通过将测量点成像到检测器上来实现对聚焦位置误差的敏感性的显着降低，使得与晶片表面上的入射平面对准的方向定向为垂直于检测器表面上的波长色散的方向。 聚焦误差灵敏度的降低可以降低聚焦精度和重复性要求，更快的聚焦时间，降低对波长误差的灵敏度，而不会影响测量精度。 在另一方面，调整在垂直于入射平面的方向上投射在晶片平面上的照明场的尺寸，以根据测量目标的性质优化所得到的测量精度和速度。

公开(公告)号：US08832611B2

公开(公告)日：2014-09-09

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50 ,  G06F19/00 ,  G06F17/10

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US09448184B1

公开(公告)日：2016-09-20

申请号：US14180923

申请日：2014-02-14

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/00 ,  G01J4/00 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

公开(公告)号：US20130215420A1

公开(公告)日：2013-08-22

申请号：US13734506

申请日：2013-01-04

Applicant: KLA-TENCOR CORPORATION

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

公开(公告)号：US20130148112A1

公开(公告)日：2013-06-13

申请号：US13710315

申请日：2012-12-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xuefeng Liu ,  John Fielden ,  David L. Brown

IPC: G01N21/88 ,  G01N21/95 ,  H01L27/148

CPC classification number: G01N21/88 ,  G01N21/9501 ,  G01N2021/8822 ,  G01N2021/95676 ,  H01J31/26 ,  H01L27/14806 ,  H01L27/14818 ,  H01L27/14856

Abstract: A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.

Abstract translation: 聚焦EBCCD包括位于光电阴极和CCD之间的控制装置。 控制装置具有多个孔，其中多个孔垂直于光电阴极的表面形成，并且其中多个孔的图案与CCD中的像素图案对准。 每个孔被形成在面向光电阴极的控制装置的表面上的至少一个第一电极包围。 控制装置可以包括孔之间的多个脊。 控制装置可以与光电阴极分离CCD像素的大约一半的较短尺寸或更小。 可以提供多个第一电极，其中每个第一电极围绕给定的孔并且通过间隙与给定的孔分离。

公开(公告)号：US11067389B2

公开(公告)日：2021-07-20

申请号：US15952081

申请日：2018-04-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  John Fielden ,  Xuefeng Liu ,  Peilin Jiang

IPC: G01B11/27

Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

公开(公告)号：US20190049851A1

公开(公告)日：2019-02-14

申请号：US16161010

申请日：2018-10-15

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: G03F7/20 ,  H01J37/073 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

公开(公告)号：US09970863B2

公开(公告)日：2018-05-15

申请号：US14833370

申请日：2015-08-24

Applicant: KLA-Tencor Corporation

Inventor： Shankar Krishnan ,  Guorong V. Zhuang ,  David Y. Wang ,  Xuefeng Liu

IPC: G01N21/25 ,  G01J3/02 ,  G01N21/95 ,  G01N21/21 ,  G01N21/55

CPC classification number: G01N21/255 ,  G01J3/0205 ,  G01J3/0208 ,  G01J3/18 ,  G01J3/2803 ,  G01J3/42 ,  G01J2003/425 ,  G01N21/211 ,  G01N21/55 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/06113 ,  G01N2201/068

Abstract: Methods and systems for performing broadband spectroscopic metrology with reduced sensitivity to focus errors are presented herein. Significant reductions in sensitivity to focus position error are achieved by imaging the measurement spot onto the detector such that the direction aligned with the plane of incidence on the wafer surface is oriented perpendicular to the direction of wavelength dispersion on the detector surface. This reduction in focus error sensitivity enables reduced focus accuracy and repeatability requirements, faster focus times, and reduced sensitivity to wavelength errors without compromising measurement accuracy. In a further aspect, the dimension of illumination field projected on the wafer plane in the direction perpendicular to the plane of incidence is adjusted to optimize the resulting measurement accuracy and speed based on the nature of target under measurement.

公开(公告)号：US20170047207A1

公开(公告)日：2017-02-16

申请号：US15234638

申请日：2016-08-11

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J40/06 ,  G03F7/20 ,  H01J37/29 ,  H01J37/285 ,  H01J1/34 ,  H01J35/14

CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

Abstract translation: 在具有相对的第一和第二表面的硅衬底上形成电子源。 在硅衬底的第二表面上制备至少一个场致发射体以增强电子的发射。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄的连续的硼层直接设置在场致发射体的输出表面上。 场发射器可以采取各种形状，例如金字塔和圆形晶须。 一个或几个可选的栅极层可以放置在或稍低于场发射极尖端的高度，以便实现对发射电流和高发射电流的快速和准确的控制。 场发射极可以是p型掺杂的并且被配置为以反偏压模式操作，或者场发射极可以是n型掺杂的。

公开(公告)号：US08860937B1

公开(公告)日：2014-10-14

申请号：US13743304

申请日：2013-01-16

Applicant: KLA-Tencor Corporation

Inventor： Thaddeus Gerard Dziura ,  Xuefeng Liu ,  David Y. Wang ,  Jonathan Madsen ,  Alexander Kuznetsov ,  Johannes D. de Veer ,  Shankar Krishnan ,  Derrick Shaughnessy ,  Andrei Shchegrov

IPC: G01N21/00 ,  G01N21/47

CPC classification number: G01N21/47 ,  G01B2210/56 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

Abstract translation: 提供了用于高纵横比和大横向尺寸结构的各种计量系统和方法。 一种方法包括将光引导到在晶片上形成的一个或多个结构。 该光包括紫外光，可见光和红外光。 一个或多个结构包括至少一个高纵横比结构或至少一个大的横向尺寸结构。 该方法还包括响应于来自一个或多个结构的光而产生输出，这是由于指向一个或多个结构的光。 另外，该方法包括使用该输出确定一个或多个结构的一个或多个特性。