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    Radiation-emitting body and method for producing a radiation-emitting body
    11.
    发明授权
    Radiation-emitting body and method for producing a radiation-emitting body 有权
    辐射发射体及其辐射发射体的制造方法

    公开(公告)号：US08476643B2

    公开(公告)日：2013-07-02

    申请号：US11786887

    申请日：2007-04-13

    申请人： Berthold Hahn ,  Volker Härle ,  Reiner Windisch

    发明人： Berthold Hahn ,  Volker Härle ,  Reiner Windisch

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

    摘要翻译： 一种辐射发射体，包括具有用于产生电磁辐射的有源区的层序列，用于耦合所产生的辐射的耦合出层，所述耦合出层被布置在所述层序列的第一侧上，所述反射层用于 反射所产生的辐射，所述反射层布置在与第一侧相对的第二侧上，并且层序列的面向反射层的界面并且具有突出结构元件的横向图案化，其中反射层连接到 层序列，使得反射层具有对应于界面的图案化的图案。 此外还规定了用于制造辐射发射体的方法。

    Method for Fabricating a Semiconductor Component Based on GaN
    13.
    发明申请
    Method for Fabricating a Semiconductor Component Based on GaN 有权
    基于GaN制造半导体元件的方法

    公开(公告)号：US20100200864A1

    公开(公告)日：2010-08-12

    申请号：US12648566

    申请日：2009-12-29

    申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L33/32

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。

    Radiation-emitting thin-film semiconductor chip
    16.
    发明授权
    Radiation-emitting thin-film semiconductor chip 有权
    辐射发射薄膜半导体芯片

    公开(公告)号：US08604497B2

    公开(公告)日：2013-12-10

    申请号：US10572655

    申请日：2003-09-26

    申请人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/46

    摘要： A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).

    摘要翻译： 一种具有外延多层结构（12）的辐射发射薄膜半导体芯片，其包含有源辐射产生层（14）并具有第一主面（16）和第二主面（18） 第一主面 - 用于耦合在有源辐射产生层中产生的辐射。 此外，多层结构（12）的第一主面（16）耦合到反射层或界面，并且邻接多层结构的第二主面（18）的多层结构的区域（22）被图案化 一个或二维地具有凸起高度（26）。

    Method for separating a semiconductor layer from a substrate by irradiating with laser pulses
    19.
    发明授权
    Method for separating a semiconductor layer from a substrate by irradiating with laser pulses 有权
    通过照射激光脉冲从衬底分离半导体层的方法

    公开(公告)号：US08524573B2

    公开(公告)日：2013-09-03

    申请号：US10544306

    申请日：2004-01-27

    申请人： Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

    发明人： Stephan Kaiser ,  Volker Härle ,  Berthold Hahn

    IPC分类号： H01L21/428

    CPC分类号： H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

    摘要： A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

    摘要翻译： 一种半导体元件的制造方法，其中通过激光脉冲照射半导体层与衬底分离，激光脉冲的脉冲持续时间小于或等于10ns。 激光脉冲具有空间光束轮廓，其侧面斜率被选择为足够温和以防止在半导体层和衬底的分离期间由于热诱导的横向应力引起的半导体层中的裂纹。

    Method for Fabricating a Semiconductor Component based on GaN
    20.
    发明申请
    Method for Fabricating a Semiconductor Component based on GaN 有权
    制造基于GaN的半导体元件的方法

    公开(公告)号：US20120211787A1

    公开(公告)日：2012-08-23

    申请号：US13398425

    申请日：2012-02-16

    申请人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan BADER ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L33/60

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。