公开(公告)号：US08241422B2

公开(公告)日：2012-08-14

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B25/12

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20070209575A1

公开(公告)日：2007-09-13

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20060120415A1

公开(公告)日：2006-06-08

申请号：US11329019

申请日：2006-01-10

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

IPC分类号： H01S3/10

CPC分类号： G02F1/377 ,  G02F2202/20

摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.

摘要翻译： 提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。 从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。 蓝色激光束“B”从平板光波导8发射。

公开(公告)号：US5919304A

公开(公告)日：1999-07-06

申请号：US702157

申请日：1996-08-23

申请人： Minoru Imaeda ,  Katsuhiro Imai ,  Tsuguo Fukuda

发明人： Minoru Imaeda ,  Katsuhiro Imai ,  Tsuguo Fukuda

IPC分类号： G02F1/35 ,  C30B15/00 ,  C30B15/08 ,  C30B15/20 ,  C30B29/30 ,  G02F1/355 ,  H01S3/109

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/91 ,  Y10T117/1036 ,  Y10T117/1044

摘要： When producing an oxide-series single crystal by continuously pulling downwardly by .mu. pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

摘要翻译： 当通过mu拉下法连续拉下来生产氧化物系单晶时，单晶的组成可以通过改变单晶的拉伸速度来适当且快速地控制，以连续地制备具有恒定组成的单晶。 优选地，拉伸速度为20-300mm / hr，随着单晶的生长的进行，拉伸速率降低。

公开(公告)号：US20100107969A1

公开(公告)日：2010-05-06

申请号：US12655826

申请日：2010-01-08

申请人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

发明人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

IPC分类号： C30B7/00

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406

摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

摘要翻译： 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

公开(公告)号：US20090246942A1

公开(公告)日：2009-10-01

申请号：US12411507

申请日：2009-03-26

申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC分类号： H01L21/20 ,  C23C16/503

CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

公开(公告)号：US07236674B2

公开(公告)日：2007-06-26

申请号：US10542299

申请日：2003-12-22

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

IPC分类号： G02B6/10 ,  G02F1/35 ,  H01S3/10

CPC分类号： G02F1/3558 ,  G02F1/3775 ,  G02F2201/30

摘要： An optical waveguide device has a substrate composed of a nonlinear optical material and a periodically domain-inverted structure having the same composition as the nonlinear optical material, where the domain-inverted structure has a refractive index distribution relying on the domain-inverted structure.

摘要翻译： 光波导器件具有由非线性光学材料构成的基板和具有与非线性光学材料相同组成的周期性畴反转结构，其中畴反转结构具有依赖畴反转结构的折射率分布。

公开(公告)号：US07171094B2

公开(公告)日：2007-01-30

申请号：US10542424

申请日：2003-12-22

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

IPC分类号： G02B6/10

CPC分类号： G02F1/3775 ,  G02F1/3558 ,  G02F1/365 ,  G02F2201/063

摘要： An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.

摘要翻译： 光波导器件包括：转换入射光的波长并发射转换的光的波导层。 在波导层中，设置脊波导和平板波导，平坦波导形成在脊状波导的两侧，凹槽部分插入其间。 波导层满足入射光的多模态，通过脊波导传播的光处于单一模式。

公开(公告)号：US06447606B2

公开(公告)日：2002-09-10

申请号：US09320335

申请日：1999-05-26

申请人： Minoru Imaeda ,  Takashi Yoshino

发明人： Minoru Imaeda ,  Takashi Yoshino

IPC分类号： C30B2812

CPC分类号： G02F1/377 ,  C30B23/02 ,  C30B29/30 ,  G02F1/3551 ,  G02F2201/307 ,  G02F2202/20 ,  Y10S117/904 ,  Y10S117/918

摘要： A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

摘要翻译： 一种由铌酸锂钾 - 钾酸钾固溶体的单晶制成的单晶膜或铌酸锂钾的单晶的方法，包括以下步骤：制备由单晶膜材料制成的靶 制备由铌酸锂钾锂铌酸钾固溶体的单晶或铌酸锂钾的单晶构成的基体，照射靶，通过解离和蒸发来气化构成靶的分子，并外延生长单晶 电影在基础上。

公开(公告)号：US06257224B1

公开(公告)日：2001-07-10

申请号：US09031566

申请日：1998-02-26

申请人： Takashi Yoshino ,  Kenji Kato ,  Minoru Imaeda

发明人： Takashi Yoshino ,  Kenji Kato ,  Minoru Imaeda

IPC分类号： B28D104

CPC分类号： H01L21/304 ,  B23K26/364 ,  B28D5/0005 ,  B28D5/0011 ,  C30B33/00 ,  Y10S125/901 ,  Y10T225/12

摘要： A process for dicing a preform made of an oxide single crystal into cut pieces each having a given shape, includes the steps of removing molecules of the oxide single crystal through dissociation and evaporation with an optochemical reaction under irradiation of a laser beam upon the preform, thereby forming grooves on the preform, and then cleaving the preform along the groove.

摘要翻译： 将由氧化物单晶制成的预成型体切割成具有给定形状的切割片的方法包括以下步骤：通过激光束照射在预成型体上的光化学反应通过解离和蒸发除去氧化物单晶的分子， 从而在预成型件上形成凹槽，然后沿着凹槽切割预成型件。