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公开(公告)号：US4648096A
公开(公告)日：1987-03-03
申请号：US660934
申请日：1984-10-15
摘要： A distributed feedback semiconductor laser which has periodic corrugations in a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of carriers into said light emitting layer. In accordance with the present invention, there are provided, in the neighborhood of the center of a laser region, a region for changing the phase of the periodic corrugations by about 180 degrees, and, on the extension of the laser oscillation region at both sides thereof, a window region formed of a semiconductor larger in energy gap but smaller in refractive index than the light emitting layer, the length of the window region being so limited as to prevent substantial reflection of laser output light in the window region.
摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上在发光层或邻接层中具有周期性波纹，并通过将载流子注入所述发光层来执行激光振荡。 根据本发明，在激光区域的中心附近设置用于将周期性波纹的相位改变约180度的区域，并且在两侧的激光振荡区域的延伸上 由能隙较大且折射率小于发光层的半导体形成的窗口区域，窗口区域的长度受到限制，以防止激光输出光在窗口区域中的实质反射。
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公开(公告)号：US4633474A
公开(公告)日：1986-12-30
申请号：US678244
申请日：1984-12-05
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.
摘要翻译： 一种分布式反馈半导体激光器，其具有在与发光层相邻的层中形成的周期性波纹，以沿着光的行进方向延伸，并且通过向发光层注入电流并执行激光振荡，其中， 至少一个金属电极具有设置在光在激光的厚度方向上基本分布的位置的TM模式抑制区域。 在光的行进方向上，在激光振荡区域的两端配置由能量差大于发光层的半导体形成的窗口区域，限制窗口区域的长度，使得不发生实质的反射。
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公开(公告)号：US4573161A
公开(公告)日：1986-02-25
申请号：US556294
申请日：1983-11-30
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser, in which layers on both sides of the light emitting region are each formed by laminating a plurality of semiconductor layers of different energy band gaps and thicknesses smaller than 0.03 .mu.m. The thickness of the thin film layer of at least one kind of the semiconductor thin film layers of a thickness less than 0.03 .mu.m varies in dependence upon the layers remoteness from the light emitting region. The light emitting region and the layers on both sides of the light emitting region are each formed of a mixed crystal which consists of indium, gallium, arsenic and phosphorus, or indium, gallium, aluminum and arsenic and which has a lattice constant difference less than 0.3% relative to indium phosphide.
摘要翻译： 通过层叠多个不同能带隙和小于0.03μm的厚度的半导体层，形成发光区域两侧的层的半导体激光器。 厚度小于0.03μm的至少一种半导体薄膜层的薄膜层的厚度根据与发光区域偏离的层次而变化。 发光区域和发光区域两侧的层均由铟，镓，砷和磷或铟，镓，铝和砷组成的混晶体形成，其晶格常数差小于 相对于磷化铟为0.3％。
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公开(公告)号：US4553239A
公开(公告)日：1985-11-12
申请号：US464889
申请日：1983-02-08
CPC分类号： H01S5/12 , G02F3/026 , H01S5/0281 , H01S5/06 , H01S5/0602 , H01S5/06213 , H01S5/16 , H01S5/164
摘要： A distributed feedback semiconductor laser which has periodic corrugations on a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer. In accordance with the present invention, a semiconductor having an energy gap larger than that of light emitting layer is formed so as to be extended from a current injection region. The semiconductor is formed uniformly and sufficiently distributed in the current injection region.
摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上的发光层或相邻层上具有周期性波纹，并且通过将电流注入发光层来执行激光振荡。 根据本发明，形成具有比发光层的能隙大的能隙的半导体，以从电流注入区域延伸。 半导体在电流注入区域中形成均匀且充分分布。
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公开(公告)号：US4506367A
公开(公告)日：1985-03-19
申请号：US433085
申请日：1982-10-06
CPC分类号： H01S5/12 , H01S5/10 , H01S5/1082
摘要： A distributed feedback semiconductor laser which is characterized in that periodic corrugations are performed in the surface of an InGaAsP quaternary layer so that an InP layer is grown thereon so as to overcome difficulties in prior arts.
摘要翻译： 一种分布式反馈半导体激光器，其特征在于在InGaAsP四元层的表面进行周期性波纹，使得InP层在其上生长，以克服现有技术中的困难。
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公开(公告)号：US5122844A
公开(公告)日：1992-06-16
申请号：US706542
申请日：1991-05-22
摘要： A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.
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公开(公告)号：US4897845A
公开(公告)日：1990-01-30
申请号：US350088
申请日：1989-05-10
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/50 , H01S5/2203 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.
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公开(公告)号：US4826291A
公开(公告)日：1989-05-02
申请号：US882588
申请日：1986-07-07
CPC分类号： G03F7/001 , G02B5/1857 , Y10S359/90
摘要： A method is disclosed for manufacturing a diffraction grating formed by corrugations reversed in phase between a first region and a second region through use of two kinds of photoresists of opposite photosensitive characteristics. An isolation film is introduced for preventing the photoresists from getting mixed with each other, permitting the combined use of any photoresists. A step may be further included in which the isolation film is deposited on one of two kinds of photoresist films in at least one of a first region and a second region, is subjected to two-beam interference exposure, is removed and then a degraded layer, which is formed in the surface of the above said one kind of photoresist film during the deposition of the isolation film, is removed.
摘要翻译： 公开了一种用于制造通过使用具有相反感光特性的两种光致抗蚀剂在第一区域和第二区域之间相位相反的波纹形成的衍射光栅的方法。 引入隔离膜以防止光致抗蚀剂彼此混合，允许组合使用任何光致抗蚀剂。 可以进一步包括步骤，其中隔离膜沉积在第一区域和第二区域中的至少一个中的两种光致抗蚀剂膜中的一种上经受双光束干涉曝光，然后去除劣化层 ，在隔离膜沉积期间形成在上述一种光致抗蚀剂膜的表面上。
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公开(公告)号：US4815090A
公开(公告)日：1989-03-21
申请号：US164819
申请日：1988-03-07
CPC分类号： H01S5/0264 , H01S5/164 , H01S5/12
摘要： A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a light absorbing layer provided on the window region alone is smaller than the energy gap of the light emitting layer, and in which an independent pn junction isolated from the pn junction in the laser region is provided in or at one edge of the light absorbing layer on the window region.
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公开(公告)号：US4573158A
公开(公告)日：1986-02-25
申请号：US699586
申请日：1985-02-08
申请人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S3/19
CPC分类号： H01S5/0625 , H01S5/0602 , H01S5/06255 , H01S5/12
摘要： A semiconductor laser of distributed feedback type, which is provided with a portion having periodic refractive index variations in the direction of light propagation in one of an active layer and a layer adjacent thereto and is caused to perform laser oscillation by injecting a current into the active layer portion. In accordance with the present invention, a current injection region having no periodic refractive index variations is formed on an extension of the portion having the periodic refractive index variations.
摘要翻译： 一种分布式反馈型半导体激光器，其具有在有源层和与其相邻的层之一上的光传播方向上具有周期性折射率变化的部分，并且通过向有源层注入电流而进行激光振荡 层部分。 根据本发明，在具有周期性折射率变化的部分的延伸部上形成不具有周期性折射率变化的电流注入区域。
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