摘要:
A NbC-added Fe—Mn—Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed.A Fe—Mn—Si-based shape memory alloy containing Nb and C is rolled by 10 to 30% in a temperature range of 500 to 800° C. under austenite condition, then, subjected to an aging treatment by heating in a temperature range of 400 to 1000° C. for 1 minute to 2 hours.
摘要:
The present specification provides a means for specifying the condition and type of immune-related diseases on the basis of knowledge about the polarization of the distribution of helper T-cell subsets Th1 and Th2. More specifically, the gene (B19), specific only to the human Th2, is prepared by a subtraction method. A human-Th2-specific protein which the gene encodes is produced by recombinant methods, and a monoclonal antibody against the Th2-specific protein and a hybridoma which produces the monoclonal antibody is provided.
摘要:
The present invention provides for specifying the condition and type of immune-related diseases on the basis of the knowledge about the polarization of the distribution of helper T-cell subsets Th1 and Th2. More sepcifically, in this invention, the gene (B19) specific only the human Th2 is prepared and specified by a subtraction method, and a recombinant vector into which the gene is incorporated, a transformant transformed by the recombinant vector, a human-Th2-specific protein which the gene encodes and which derives from the transformant, and a monoclonal antibody against the Th2-specific protein are produced and the gene, protein, antibody, etc. are used as the means for specifying or correcting the polarization of the distribution of Th1 and Th2 to solve the above object.
摘要:
To remarkably improve shape memory properties without the need for strictly controlling the composition, the present invention provides a Ti--Ni-based shape-memory alloy having a titanium content within a range of from 50 to 66 atomic %, which comprises an amorphous alloy heat-treated at a temperature of from 600 to 800 K., in which sub-nanometeric precipitates generating coherent elastic strains are formed and distributed in the bcc parent phase(B2).
摘要:
In an apparatus for recording and/or reproducing an information signal in successive slant tracks on a record tape; an information signal is recorded by a rotary head in only a part of a respective slant track scanned by the head on the tape, coded index data formed of a plurality of blocks is generated to identify a respective recorded information signal, such as, by an absolute tape-position address counted from an end or other reference position on the record tape, a "0" index signal is provided with a predetermined number of bits representing consecutive "0" values which can be detected for identifying the beginning of an event or program defined by the information signals recorded in a number of the slant tracks, and the "0" index signal and at least one block of the coded index data are supplied to the rotary head for recording by the latter in an index area of a slant track where no information signal is recorded.
摘要:
Disclosed is a laminated body including a substrate having an unevenness with an aspect ratio of 1.5 to 100 in the surface thereof, and a conductive film that is laminated in an approximately uniform thickness on a bottom, side wall surfaces, and an apex of the unevenness, the conductive film being any one film selected from the group consisting of an ITO film, an FTO film, a SnO2 film, an ATO film, an AZO film, a GZO film, an IZO film, and an IGZO film.
摘要:
An object of the present invention is to provide a polishing pad that is prevented from causing an end-point detection error due to a reduction in light transmittance from the early stage to the final stage of the process, and to provide a method of producing a semiconductor device with the polishing pad. The present invention is directed to a polishing pad, comprising a polishing layer comprising a polishing region and a light-transmitting region, wherein a polishing side surface of the light-transmitting region is subjected to a surface roughness treatment, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use.
摘要:
A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
摘要:
A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.
摘要:
A polishing pad has an excellent polishing rate and is superior in longevity without generating center slow. A method of manufacturing a semiconductor device with the polishing pad is also provided. The polishing pad has a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.