公开(公告)号：US06658937B2

公开(公告)日：2003-12-09

申请号：US10192526

申请日：2002-07-11

申请人： Kenichi Ao ,  Hirofumi Higuchi

发明人： Kenichi Ao ,  Hirofumi Higuchi

IPC分类号： G01P2100

CPC分类号： G01C19/5719

摘要： An oscillatory angular rate sensor unit includes a mount base and a sensor element installed on the mount base. The sensor element includes an oscillator which produces angular velocity-caused oscillations in a first direction when the sensor element experiences angular motion during self-excited oscillation of the oscillator in a second direction opposite the first direction. A resonant frequency of the sensor unit in the first direction is set to a value less than or equal to a reciprocal of square root of two times a difference between resonant frequencies of the oscillator in the first and second directions, thereby eliminating an error output caused by undesirable acceleration acting on the sensor unit.

摘要翻译： 振荡角速率传感器单元包括安装基座和安装在安装基座上的传感器元件。 传感器元件包括振荡器，当传感器元件在与第一方向相反的第二方向的自激振荡期间经历角度运动时，在第一方向上产生角速度引起的振荡。 传感器单元在第一方向上的谐振频率被设置为小于或等于振荡器在第一和第二方向的谐振频率之差的两倍的平方根的倒数的值，从而消除了导致的误差输出 通过作用在传感器单元上​​的不希望的加速度。

公开(公告)号：US5987989A

公开(公告)日：1999-11-23

申请号：US795402

申请日：1997-02-05

申请人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

发明人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/13 ,  H01L29/84

CPC分类号： B81B7/0006 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.

摘要翻译： 半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。 第一固定电极和第二固定电极固定地设置在基板的上表面上。 每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。 下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。 导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。 第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。 第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。 下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

公开(公告)号：US5851851A

公开(公告)日：1998-12-22

申请号：US399342

申请日：1995-03-06

申请人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

发明人： Hirofumi Uenoyama ,  Masakazu Kanosue ,  Kenichi Ao ,  Yasutoshi Suzuki

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/78

CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

摘要： It is an object to provide a method of fabrication for a semiconductor acceleration sensor which can prevent destruction of a movable portion during dicing. A sacrificial layer composed of silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the sacrificial layer. A polyimide film is applied on the movable member at room temperature and heated to approximately 350.degree. C. to harden. The movable member is supported by this polyimide film. Accordingly, etching liquid penetration holes are formed on the polyimide film. Further, the sacrificial layer disposed between the movable member and the silicon substrate is etched away by means of dipping the silicon substrate into hydrofluoric acid-based etching liquid. Thereafter, the silicon substrate is dipped into demineralized water to replace the etching liquid with demineralized water, and subsequently the silicon substrate is dried. Accordingly, the silicon substrate is diced and thereafter the polyimide film is etched away by O.sub.2 ashing.

摘要翻译： 本发明的目的是提供一种半导体加速度传感器的制造方法，其可以防止在切割期间可动部分的破坏。 在硅衬底上形成由氧化硅膜构成的牺牲层，在牺牲层上形成由多晶硅构成的可动构件。 将聚酰亚胺膜在室温下涂布在可动件上并加热至约350℃以硬化。 可动构件由该聚酰亚胺膜支撑。 因此，在聚酰亚胺膜上形成蚀刻液体穿透孔。 此外，通过将硅衬底浸入氢氟酸蚀刻液中，设置在可移动部件和硅衬底之间的牺牲层被蚀刻掉。 此后，将硅衬底浸入软化水​​中以用软化水代替蚀刻液，随后将硅衬底干燥。 因此，对硅衬底进行切割，然后通过氧化物灰蚀蚀刻掉聚酰亚胺膜。

公开(公告)号：US5627397A

公开(公告)日：1997-05-06

申请号：US402949

申请日：1995-03-13

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

公开(公告)号：US5551586A

公开(公告)日：1996-09-03

申请号：US293966

申请日：1994-08-24

申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Yoshimi Yoshino ,  Motofumi Suzuki

IPC分类号： G01B7/00 ,  C23C28/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01P3/487 ,  G01R33/09 ,  H01L27/22 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC分类号： G01D5/145 ,  B82Y25/00 ,  C23C28/00 ,  G01P3/487 ,  G01R33/093 ,  H01L27/22

摘要： A method of manufacturing a magneto-electric conversion device having a large rate of change of magnetic resistance and which is easy to position with respect to a magnetized surface, and a moving subject displacement detector using a magneto-electric conversion device manufactured by that method. A magnet which rotates together with the rotation of a drive gear is magnetized in alternately differing north and south poles, arranged in an equal sized section from a center portion thereof. An IC chip is positioned opposite to and at a distance from the magnetized surface of the magnet. Magneto-electric conversion devices are located on the IC chip. These magneto-electric conversion devices are formed by repeated alternate depositions, onto a surface of a single-crystal silicon substrate, of magnetic cobalt films having a thickness of several to several tens of angstroms and non-magnetic copper films having a thickness of several to several tens of angstroms.

摘要翻译： 一种制造磁阻变化率大且相对于磁化面容易定位的磁电转换装置的方法，以及使用该方法制造的磁电转换装置的移动体位移检测器。 与驱动齿轮的旋转一起旋转的磁体被磁化为交替不同的北极和南极，其中心部分以相同的尺寸设置。 IC芯片位于与磁体的磁化表面相对且距离磁化表面一定距离处。 磁电转换装置位于IC芯片上。 这些磁电转换装置通过重复交替沉积形成在单晶硅衬底的表面上，具有几个至几十埃厚度的磁性钴膜和非磁性铜膜，其厚度为几个至几十 几十埃。

公开(公告)号：US4835509A

公开(公告)日：1989-05-30

申请号：US076891

申请日：1987-07-23

申请人： Yoshimi Yoshino ,  Toshikazu Arasuna ,  Kenichi Ao ,  Katsuhiko Ariga ,  Toshikazu Matsushita ,  Ichiro Izawa

发明人： Yoshimi Yoshino ,  Toshikazu Arasuna ,  Kenichi Ao ,  Katsuhiko Ariga ,  Toshikazu Matsushita ,  Ichiro Izawa

IPC分类号： H01L43/08

CPC分类号： H01L43/08

摘要： A potentiometer includes a magnetoresistive element made of ferromagnetic material. A device applies a magnetic field to the magnetoresistive element. An absolute value of the magnetic field applied to the magnetoresistive element is equal to or greater than a saturation magnetic field with respect to the ferromagnetic magnetoresistive element. The magnetic field applying device is movable relative to the magnetoresistive element.

摘要翻译： 电位计包括由铁磁材料制成的磁阻元件。 器件将磁场施加到磁阻元件。 施加到磁阻元件的磁场的绝对值等于或大于相对于铁磁性磁阻元件的饱和磁场。 磁场施加装置可相对于磁阻元件移动。

公开(公告)号：US4754221A

公开(公告)日：1988-06-28

申请号：US807023

申请日：1985-12-09

申请人： Kenichi Ao ,  Yoshimi Yoshino

发明人： Kenichi Ao ,  Yoshimi Yoshino

IPC分类号： H01L43/08 ,  G01B7/00 ,  G01B7/30 ,  G01D5/14 ,  G01D5/245 ,  G01R33/09

CPC分类号： G01D5/145

摘要： When applying a bias field in the direction of the easy axis of magnetization of a signal field-detecting MR element assembly, a leakage magnetic field of a magnetic recording medium adapted to generate a signal field is applied as the desired bias field without using any exclusive bias field application device. The magnetic recording medium and the thin-film MR element assembly are arranged in a manner that they make a predetermined angle.

摘要翻译： 当在信号场检测MR元件组件的易磁化轴的方向上施加偏置场时，适用于产生信号场的磁记录介质的泄漏磁场被施加作为期望的偏置场，而不使用任何排他的 偏置场应用装置。 磁记录介质和薄膜MR元件组件以它们形成预定角度的方式布置。

公开(公告)号：US08549916B2

公开(公告)日：2013-10-08

申请号：US13093328

申请日：2011-04-25

申请人： Minekazu Sakai ,  Kenichi Ao

发明人： Minekazu Sakai ,  Kenichi Ao

IPC分类号： G01C19/56

CPC分类号： G01C19/5747

摘要： In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.

摘要翻译： 在角速度传感器中，梁部分将一对振动器彼此连接并将每个振动器耦合到基板，以使得一对振动器能够在彼此垂直的第一方向和第二方向上移动。 驱动部分在第一方向上以相反的相位振动一对振动器。 检测部分检测一对振动器在第二方向上的位移，作为电容的变化。 检测部分包括第一和第二检测电极。 限制部分基于电容的变化来限制一对振动器在第二方向上的位移。 限制部分包括第一和第二限制电极，并且限制电极之间的电极间隔是第二方向上检测电极宽度的两倍。

公开(公告)号：US07417269B2

公开(公告)日：2008-08-26

申请号：US10717902

申请日：2003-11-21

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US07298022B2

公开(公告)日：2007-11-20

申请号：US11075881

申请日：2005-03-10

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： H01L23/544

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，因此不会产生保护片的废料，从而防止对芯片的污染。