公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US20070243377A1

公开(公告)日：2007-10-18

申请号：US11632604

申请日：2005-07-08

申请人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

发明人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

IPC分类号： D02G3/00 ,  D02G3/02

CPC分类号： D01F6/54 ,  C08F220/14 ,  C08F220/44 ,  C08F220/58 ,  C08F228/02 ,  D01F6/48 ,  Y10T428/2913 ,  Y10T428/2929 ,  Y10T428/2931 ,  Y10T442/64

摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.

摘要翻译： 根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物 的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％ 丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量 ）为100重量份。 这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

公开(公告)号：US20070077737A1

公开(公告)日：2007-04-05

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L21/26 ,  H01L21/42 ,  H05H1/24

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。

公开(公告)号：US20050002590A1

公开(公告)日：2005-01-06

申请号：US10836217

申请日：2004-05-03

申请人： Kohei Kawamura

发明人： Kohei Kawamura

IPC分类号： G06T11/60 ,  G06F3/12 ,  G06T3/00 ,  G06T3/40 ,  G06T3/60 ,  G06T5/50 ,  H04N1/00 ,  H04N1/32 ,  H04N1/387 ,  H04N1/393 ,  H04N5/76 ,  H04N5/91 ,  H04N7/173 ,  H04N21/2668 ,  H04N21/274 ,  G06K9/00

CPC分类号： H04N1/32 ,  H04N1/00127 ,  H04N1/00132

摘要： An information processing method for providing a communication terminal with a service. When editing in a lump of a plurality of held data to which the services are to be applied is received an instruction from the communication terminal, data capable of undergoing the accepted editing is automatically selected from the held data and the selected data is edited. With regard to data automatically judged to be incapable of undergoing the accepted editing, information that reports exclusion of this data from editing is transmitted to the communication terminal and is displayed thereby. That is, when plural items of held data are edited simultaneously, data not suited to this editing is excluded automatically, thereby enhancing user convenience in terms of operation. In addition, the fact that data not suited to editing has not been edited is clearly indicated to the user to prevent miss-recognition by the user.

摘要翻译： 一种用于向通信终端提供服务的信息处理方法。 从通信终端接收到要对其应用服务的多个保持数据的块中的编辑时，从保持的数据中自动选择能够接受接受的编辑的数据，并编辑所选择的数据。 关于自动判断为不能进行接受编辑的数据，报告将该数据排除在编辑之外的信息被发送到通信终端并被显示。 也就是说，当多个保持数据项被同时编辑时，自动排除不适合于该编辑的数据，从而提高用户操作方便性。 此外，清楚地向用户指示不适合于编辑的数据的事实，以防止用户的错误识别。

公开(公告)号：US08017197B2

公开(公告)日：2011-09-13

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H05H1/24 ,  C23C14/02 ,  C23C16/00 ,  C23F1/00

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，将从气体供给部件（3）供给到处理室（1）的C5F8气体变更（激活）为等离子体，以在半导体晶片（W）上形成一定厚度的含氟碳膜 ）。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂工序中，将C5F8气体变成等离子体，形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。

公开(公告)号：US07776736B2

公开(公告)日：2010-08-17

申请号：US11596186

申请日：2005-05-10

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L29/40 ,  H01L21/4763

CPC分类号： H01L21/76801 ,  C23C16/30 ,  C23C16/45565 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/76825 ,  H01L21/76826

摘要： Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR+) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.

摘要翻译： 公开了半导体装置等的电子设备用基板及其加工方法。在该处理方法中，首先准备电子器件用基板，在其上形成由碳氟化合物（CF）构成的绝缘膜（I） 基板的表面。 然后，通过用例如以氪（Kr）气体制成的活性物质（KR +）轰击绝缘膜（I）的表面，除去暴露在绝缘膜（I）的表面中的氟（F）原子 等离子体。 在这方面，至少从绝缘膜形成步骤直到完成除氟步骤之后，基板与水分保持脱离接触。

公开(公告)号：US20060264059A1

公开(公告)日：2006-11-23

申请号：US10568461

申请日：2004-08-12

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。 本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

公开(公告)号：US20060223306A1

公开(公告)日：2006-10-05

申请号：US10567733

申请日：2004-07-23

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Kenichi Nishizawa ,  Yasuhiro Terai ,  Akira Asano

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Kenichi Nishizawa ,  Yasuhiro Terai ,  Akira Asano

IPC分类号： H01L21/20 ,  H01L21/4763 ,  H01L21/36

CPC分类号： H01L21/0212 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127

摘要： A film forming method comprise the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio, defined as a ratio of a number of F atoms to a number of C atoms in the source gas molecule, wherein the F/C ratio is larger than 1 but smaller than 2.

摘要翻译： 一种成膜方法包括以下步骤：通过使用含有C和F的源气体形成F-掺杂的碳膜，并通过自由基改性F-掺杂的碳膜，源气体的F / C比定义为比率 的多个F原子与源气体分子中的多个C原子，其中F / C比大于1但小于2。

公开(公告)号：US20060068583A1

公开(公告)日：2006-03-30

申请号：US10711649

申请日：2004-09-29

申请人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph Hillman ,  Bentley Palmer

发明人： Kohei Kawamura ,  Akira Asano ,  Koutarou Miyatani ,  Joseph Hillman ,  Bentley Palmer

IPC分类号： H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/32051 ,  H01L21/76814

摘要： A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

摘要翻译： 一种用于处理用于将电介质膜整合到半导体器件中的氟碳电介质膜的方法。 该方法包括提供其上沉积有氟碳膜的基材，该膜具有含有污染物的暴露表面，并用超临界二氧化碳流体处理暴露表面以清洁污染物的暴露表面并提供表面终止。 超临界二氧化碳处理改善了在氟碳电介质膜的表面上形成的含有金属的膜的膜结构的粘附性和电性能。

公开(公告)号：US5083061A

公开(公告)日：1992-01-21

申请号：US614600

申请日：1990-11-15

申请人： Akira Koshiishi ,  Kohei Kawamura

发明人： Akira Koshiishi ,  Kohei Kawamura

IPC分类号： H01J27/08 ,  H01J27/20 ,  H01J37/08 ,  H01L21/265

CPC分类号： H01J27/08 ,  H01J2237/08 ,  H01J2237/31701

摘要： An ion source according to the present invention includes a first chamber, including a main chamber having an electron generating arrangement therein, and a sub-chamber communicating with the main chamber through a nozzle, for producing a first plasma by a discharge. A supply is also provided for supplying a first gas for a discharge into the main chamber, as well as an electron extracting arrangement for extracting electrons from the first plasma. Also included are a second chamber for producing a second plasma by discharge excitation of the extracted electrons and ionizing a second gas as a source gas, a further supply for supplying the second gas into the second chamber, and a magnetic field generator for generating a magnetic field for guiding the extracted electrons toward the second chamber. The electron extracting arrangement includes an electrode between the sub-chamber and the second chamber. The electrode has a first hole, formed at a position opposite to the opening of the nozzle, for allowing the extracted electrons to pass therethrough and to move into the second chamber, and second holes, arranged around the first hole, for allowing part of the first gas injected from the nozzle to pass therethrough and to move into the second chamber. Part of the first gas is drawn into the second chamber through the second holes of the electrode, and the density of the first gas passing through the first hole is decreased.

摘要翻译： 根据本发明的离子源包括：第一室，包括其中具有电子产生装置的主室，以及通过喷嘴与主室连通的子室，用于通过排放产生第一等离子体。 还提供一种用于将第一气体供应到主室中的电源，以及用于从第一等离子体中提取电子的电子提取装置。 还包括第二室，用于通过所提取的电子的放电激发产生第二等离子体，并将作为源气体的第二气体电离，用于将第二气体供应到第二室中的另外的供应源，以及用于产生磁场的磁场发生器 用于将提取的电子引导到第二室。 电子提取装置包括在子室和第二室之间的电极。 电极具有形成在与喷嘴的开口相对的位置处的第一孔，用于允许所提取的电子通过并移动到第二室中，以及设置在第一孔周围的第二孔，用于允许部分 从喷嘴喷射的第一气体通过并移动到第二室中。 第一气体的一部分通过电极的第二孔被吸入第二室，并且通过第一孔的第一气体的密度降低。