公开(公告)号：US20150184296A1

公开(公告)日：2015-07-02

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积（ALD）或分子层沉积（MLD）阻挡涂层的涂层系统。 涂层系统包括流体处理部件，其中内部流体润湿表面限定涂层系统的工艺区域，与部件的工艺区域流体连通的气体供应系统，其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层，以及与组件的处理区域流体连通的排气系统，其中排气系统排出 从组件的工艺区域通过其出口处理气体。

公开(公告)号：US20140315392A1

公开(公告)日：2014-10-23

申请号：US13867522

申请日：2013-04-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Hong Shih ,  Anthony Amadio ,  Rajinder Dhindsa ,  John Michael Kerns ,  John Daugherty

IPC: H01L21/67

CPC classification number: C23C16/4404 ,  H01J37/32477 ,  Y10T428/12736 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/1284 ,  Y10T428/12861 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12979 ,  Y10T428/265 ,  Y10T428/31678

Abstract: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component.

Abstract translation: 半导体等离子体处理室的冷喷涂屏障涂层部件包括具有至少一个金属表面的基板，其中金属表面的一部分被配置成形成电接触。 至少金属表面上的热导电材料形成冷喷涂阻挡涂层，所述金属表面被构造成形成基板的电接触。 此外，冷喷涂阻挡涂层也可以位于组件的等离子体暴露和/或处理气体暴露表面上。

公开(公告)号：US20140113453A1

公开(公告)日：2014-04-24

申请号：US13659328

申请日：2012-10-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  Anthony Amadio ,  Duane Outka ,  Yan Fang ,  Allan Ronne ,  Robert G. O'Neil ,  Rajinder Dhindsa ,  Travis Taylor

IPC: H01L21/3065 ,  H01L21/306 ,  C23C16/32 ,  B32B3/30 ,  B32B15/04 ,  C23C28/00

CPC classification number: C23C16/32 ,  C23C16/4404 ,  C23C18/165 ,  C23C18/1689 ,  C23C18/32 ,  C23C28/322 ,  C23C28/341 ,  C25D5/36 ,  C25D17/001 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/31678

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract translation: 半导体加工设备的碳化钨涂层室组件包括金属表面，可选的中间镍涂层和外碳化钨涂层。 该组件通过任意地在组件的金属表面上沉积镍涂层并在金属表面或镍涂层上沉积碳化钨涂层以形成最外表面来制造。