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    DISPLAY APPARATUS COMPRISING THIN FILM TRANSISTOR
    11.
    发明申请
    DISPLAY APPARATUS COMPRISING THIN FILM TRANSISTOR 有权

    公开(公告)号：US20210181554A1

    公开(公告)日：2021-06-17

    申请号：US17108598

    申请日：2020-12-01

    Applicant: LG Display Co., Ltd.

    Inventor： Yewon HONG ,  KwangMin JO ,  JungHyun LEE ,  Sohyung LEE ,  Hyun Soo SHIN

    IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L27/32

    Abstract: Disclosed is a display apparatus and a method for manufacturing the same, wherein the display apparatus comprises a substrate, a light shielding layer and a signal line on the substrate, a buffer layer on the light shielding layer and the signal line, an active layer on the buffer layer, a gate insulating film on the active layer, a gate electrode on the gate insulating film, a protection layer on the gate electrode, a first electrode of a display device on the protection layer, and a connection electrode configured to connect the signal line and the active layer with each other, wherein the light shielding layer and the signal line are disposed on the same layer, and the connection electrode and the first electrode are formed of the same material.

    ELECTROLUMINESCENCE DISPLAY
    12.
    发明申请
    ELECTROLUMINESCENCE DISPLAY 审中-公开

    公开(公告)号：US20180350286A1

    公开(公告)日：2018-12-06

    申请号：US15991045

    申请日：2018-05-29

    Applicant: LG Display Co., Ltd.

    Inventor： Sohyung LEE ,  Namyong GONG ,  Sungsoo SHIN ,  Jungyul YANG ,  Heesung LEE

    IPC: G09G3/14 ,  G09G3/3225

    Abstract: An electroluminescence display is provided. The electroluminescence display comprises data lines and gate lines intersecting each other and pixels arranged in a matrix, wherein each of subpixels of each pixel comprises: a first driver configured to drive a light-emitting element by using a first EM switching element, which switches the current path between a power supply line to which a pixel driving voltage is applied and the light-emitting element in response to a first light-emission control signal, and a first driving element connected between the first EM switching element and the light-emitting element; and a second driver configured to drive the light-emitting element by using a second EM switching element, which switches the current path between the power supply line and the light-emitting element in response to a second light-emission control signal, and a second driving element connected between the second EM switching element and the light-emitting element.

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME
    13.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME 有权
    薄膜晶体管基板和使用其显示

    公开(公告)号：US20150243683A1

    公开(公告)日：2015-08-27

    申请号：US14629554

    申请日：2015-02-24

    Applicant: LG Display Co., Ltd.

    Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

    IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

    CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

    Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

    Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 一种显示器包括：第一薄膜晶体管，第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极和第一漏电极，第二薄膜晶体管， 第二薄膜晶体管，包括：第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在氮化物层上包括氮化物层和氧化物层的中间绝缘层， 中间绝缘层设置在第一栅电极和第二栅电极上以及氧化物半导体层下方，以及设置在氧化物半导体层上的蚀刻停止层。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME
    17.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME 有权
    薄膜晶体管基板和使用其的显示器件

    公开(公告)号：US20160372497A1

    公开(公告)日：2016-12-22

    申请号：US15182265

    申请日：2016-06-14

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Sohyung LEE ,  Youngyoung CHANG ,  Kwonshik PARK ,  Mincheol KIM ,  Jeongsuk YANG

    IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1368

    CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3265

    Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

    Abstract translation: 公开了一种薄膜晶体管（TFT）基板和使用其的显示装置。 TFT基板包括：第一TFT，包括多晶半导体层，第一栅极电极，第一源电极和沉积在基板上的第一漏极电极，与第一TFT分离的第二TFT，第二TFT包括第二栅电极 ，沉积在第一栅电极上的氧化物半导体层，第二源极和第二漏电极以及与第一和第二TFT分离的多个存储电容器，每个存储电容器包括第一虚拟半导体层，第一栅极 第一虚设半导体层上的绝缘层，第一栅极绝缘层上的第一伪栅电极和第一伪栅电极上的中间绝缘层。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME
    18.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME 审中-公开
    薄膜晶体管基板和使用其显示

    公开(公告)号：US20150243688A1

    公开(公告)日：2015-08-27

    申请号：US14629538

    申请日：2015-02-24

    Applicant: LG Display Co., Ltd.

    Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

    IPC: H01L27/12 ,  H01L27/32

    CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/3262 ,  H01L29/7869

    Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

    Abstract translation: 提供薄膜晶体管基板和使用其的显示器。 显示器包括：第一区域，第二区域，设置在第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极， 以及第一漏极，设置在所述第二区的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅极，所述第二栅电极上的氧化物半导体层，第二源极和第二漏极， 显示装置的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅电极和第二栅电极之上的氧化物层。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME
    19.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME 审中-公开
    薄膜晶体管基板和使用其显示

    公开(公告)号：US20150243687A1

    公开(公告)日：2015-08-27

    申请号：US14628444

    申请日：2015-02-23

    Applicant: LG Display Co., Ltd.

    Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

    IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

    CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/7869

    Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

    Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板上的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源极和第一 漏电极，设置在所述基板上的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，中间绝缘层 包括在所述氮化物层上的氮化物层和氧化物层，所述中间绝缘层设置在所述第一栅电极和所述第二栅电极上以及所述氧化物半导体层下方，以及设置在所述氧化物半导体层上的蚀刻停止层。

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