公开(公告)号：US11605757B2

公开(公告)日：2023-03-14

申请号：US15751970

申请日：2016-08-22

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Kiseong Jeon ,  Jinhong Park ,  Hwankuk Yuh

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/38 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H05K1/11 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

公开(公告)号：US09577138B2

公开(公告)日：2017-02-21

申请号：US14841159

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Hyunjung Park ,  Youngho Choe ,  Changseo Park

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/035272 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract translation: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

公开(公告)号：US09076905B2

公开(公告)日：2015-07-07

申请号：US14041907

申请日：2013-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Goohwan Shim ,  Youngho Choe ,  Changseo Park

IPC: H01L21/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。

公开(公告)号：US12176225B2

公开(公告)日：2024-12-24

申请号：US17621107

申请日：2019-07-09

Applicant: LG ELECTRONICS INC.

Inventor： Changhyun Jeong ,  Seongmin Moon ,  Changseo Park ,  Donghae Oh

IPC: H01L21/67 ,  H01L21/683 ,  H01L25/075 ,  H01L23/00

Abstract: Discussed is an assembly board including: a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion at predetermined intervals; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; and barrier ribs stacked on the dielectric layer and defining cells in which semiconductor light emitting diodes are seated at the predetermined intervals along an extending direction of the plurality of assembly electrodes so as to overlap a portion of the plurality of assembly electrodes, wherein the plurality of assembly electrodes include first electrodes and second electrodes disposed on different planes on the base portion, and wherein the first electrodes are disposed on one surface of the base portion, and the second electrodes are disposed on one surface of the dielectric layer.

公开(公告)号：US11798921B2

公开(公告)日：2023-10-24

申请号：US17530155

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L21/6835 ,  H01L33/0093 ,  H01L33/62 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2933/0066

Abstract: Discussed is an assembly substrate used for a display device manufacturing method of mounting semiconductor light-emitting diodes on the assembly substrate at preset positions using electric field and magnetic field. The assembly substrate includes a base portion, a plurality of assembly electrodes on the base portion, a dielectric layer on the base portion to cover the assembly electrodes, a barrier wall on the base portion, and a metal shielding layer on the base portion, wherein the metal shielding layer overlaps the barrier wall.

公开(公告)号：US11211366B2

公开(公告)日：2021-12-28

申请号：US16834315

申请日：2020-03-30

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Jinhyung Lee ,  Jungsub Kim ,  Seongmin Moon ,  Younho Heo

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: The present disclosure relates to an assembly substrate used for a display device manufacturing method in which semiconductor light-emitting diodes are placed on the assembly substrate at preset positions using electric field and magnetic field. Specifically, the assembly substrate includes a base portion, a plurality of assembly electrodes extending in one direction and disposed on the base portion, a dielectric layer stacked on the base portion to cover the assembly electrodes, a barrier wall formed on the base portion and having a plurality of recesses for guiding the semiconductor light-emitting diodes to the preset positions, and a metal shielding layer formed on the base portion, wherein the metal shielding layer overlaps the barrier wall so that an electric field formed between the assembly electrodes is shielded.

公开(公告)号：US10833210B2

公开(公告)日：2020-11-10

申请号：US14323986

申请日：2014-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/028

Abstract: Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

公开(公告)号：US10784385B2

公开(公告)日：2020-09-22

申请号：US14341637

申请日：2014-07-25

Applicant: LG ELECTRONICS INC.

Inventor： Chulchae Choi ,  Changseo Park ,  Jinsung Kim ,  Jaewon Chang ,  Hyungseok Kim ,  Youngho Choe ,  Philwon Yoon

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/049 ,  H01L31/068

Abstract: A solar cell is disclosed. The solar cell includes a substrate of a first conductive type; a plurality of emitter layers having a second conductive type opposite the first conductive type, the plurality of emitter layers positioned in a first surface of the substrate and extended in a first direction in the first surface of the substrate; a plurality of surface field layers having the first conductive type more heavily doped than the substrate, the plurality of surface field layers positioned in the first surface of the substrate and extended in the first direction in the first surface of the substrate; a passivation layer positioned on the first surface of the substrate and including a plurality of first openings exposing portions of each of the plurality of surface field layers and a plurality of second openings exposing portions of each of the plurality of emitter layers; a plurality of first electrodes positioned in the plurality of first openings and contacting the plurality of surface field layers; a plurality of second electrodes positioned in the plurality of second openings and contacting the plurality of emitter layers; a plurality of first conductive members positioned on the plurality of first electrodes; and a plurality of second conductive members positioned on the plurality of second electrodes.

公开(公告)号：US10707377B2

公开(公告)日：2020-07-07

申请号：US16415583

申请日：2019-05-17

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon Kim ,  Changseo Park ,  Bongchu Shim ,  Byoungkwon Cho ,  Hyunwoo Cho

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: The present disclosure relates a display device including a semiconductor light emitting device, and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed at an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer, and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction, wherein when the semiconductor light emitting device is assembled into the receiving groove, the first conductive semiconductor layer has an asymmetrical shape with respect to at least one direction so that the first conductive electrode and the second conductive electrode are arranged at preset positions.

公开(公告)号：US10446697B2

公开(公告)日：2019-10-15

申请号：US15443331

申请日：2017-02-27

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Yoonsil Jin ,  Youngho Choe

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

Abstract: A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.