公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。

公开(公告)号：US20130344647A1

公开(公告)日：2013-12-26

申请号：US13840618

申请日：2013-03-15

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yongduk JIN ,  Youngsung YANG ,  Manhyo HA

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.

Abstract translation: 根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括：将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。 在激活的热处理中，在第一气体气氛下，在比第一温度低的温度下形成防扩散膜之后，在第一温度下对基板进行热处理。

公开(公告)号：US20130298975A1

公开(公告)日：2013-11-14

申请号：US13644287

申请日：2012-10-04

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Yongduk JIN ,  Manhyo HA ,  Juhwa CHEONG

IPC: H01L31/0352 ,  H01L31/20

CPC classification number: H01L31/022425 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

Abstract translation: 根据实施例的太阳能电池包括半导体衬底; 形成在所述半导体衬底的一个表面处的第一掺杂剂层; 以及电连接到第一掺杂剂层的第一电极。 第一掺杂剂层的至少一部分包括预非晶化元件，并且第一掺杂剂层的一部分中的非淀粉化元素的浓度不同于第一掺杂剂层的另一部分中的预非晶化元素的浓度 掺杂剂层。

公开(公告)号：US20220077331A1

公开(公告)日：2022-03-10

申请号：US17529805

申请日：2021-11-18

Applicant: LG ELECTRONICS INC.

Inventor： Haejong CHO ,  Donghae OH ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0224 ,  H01B1/16 ,  C03C8/18 ,  C03C4/14 ,  C03C8/10 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068

Abstract: Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US20190334049A1

公开(公告)日：2019-10-31

申请号：US16504995

申请日：2019-07-08

Applicant: LG ELECTRONICS INC.

Inventor： Wonjae CHANG ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0745 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0368

Abstract: Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US20190319140A1

公开(公告)日：2019-10-17

申请号：US16456915

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US20170222085A1

公开(公告)日：2017-08-03

申请号：US15418336

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20220238731A1

公开(公告)日：2022-07-28

申请号：US17615167

申请日：2020-04-08

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Juhwa CHEONG ,  Youngsung YANG ,  Kyungdong LEE

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/048 ,  H01L31/05 ,  H01L31/18

Abstract: The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

公开(公告)号：US20190326456A1

公开(公告)日：2019-10-24

申请号：US16457129

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US20190305171A1

公开(公告)日：2019-10-03

申请号：US16443564

申请日：2019-06-17

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/20 ,  H01L31/105 ,  H01L31/024 ,  H01L31/0236

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.