公开(公告)号：US20150093908A1

公开(公告)日：2015-04-02

申请号：US14248046

申请日：2014-04-08

Applicant: Lam Research Corporation

Inventor： Sirish K. Reddy ,  Chunhai Ji ,  Xinyi Chen ,  Pramod Subramonium

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  C23C16/505 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274

Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

Abstract translation: 提供了使用等离子体增强化学气相沉积形成高蚀刻选择性的低应力可吸收硬掩模的方法。 在某些实施例中，所述方法包括在使用双射频等离子体源沉积可灰化硬掩模的过程中脉冲低频射频功率同时保持高频射频功率恒定。 根据各种实施例，低频射频功率可以在非零电平之间进行脉冲，或通过切换电源接通和断开。 所产生的沉积的高度选择性的可硬化硬掩模可能由于一个或多个因素而具有降低的应力，包括降低的可吸收硬掩模上的离子和原子撞击，以及在可灰化硬掩模中捕获的较低水平的氢。

公开(公告)号：US20250038034A1

公开(公告)日：2025-01-30

申请号：US18834982

申请日：2023-01-24

Applicant: Lam Research Corporation

Inventor： Stephen Topping ,  Patrick G. Breiling ,  Sergey Georgiyevich Belostotskiy ,  Ramesh Chandrasekharan ,  Timothy Scott Thomas ,  Mahmoud Vahidi ,  Yukinori Sakiyama ,  David French ,  Meenakshi Mamunuru ,  Ashish Saurabh ,  Pramod Subramonium ,  Noah Elliot Baker

IPC: H01L21/683 ,  H01J37/32

Abstract: Electrostatic chuck (ESC) apparatuses and systems are provided. An ESC may have one or more chucking electrodes and a blocking electrode that surrounds the chucking electrodes. The blocking electrode may reduce non-uniformities in semiconductor processing operations performed with the ESC. In some implementations, the blocking electrode is positioned beneath the chucking electrodes.

公开(公告)号：US20240234091A9

公开(公告)日：2024-07-11

申请号：US18493614

申请日：2023-10-24

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20240136153A1

公开(公告)日：2024-04-25

申请号：US18493614

申请日：2023-10-23

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  C23C16/517 ,  C23C16/52 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  C23C16/517 ,  C23C16/52 ,  H01J37/32174 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/3321

Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20220216037A1

公开(公告)日：2022-07-07

申请号：US17595505

申请日：2020-05-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Pramod Subramonium ,  Ragesh Puthenkovilakam ,  Rujun Bai ,  David French

IPC: H01J37/32 ,  H01L21/027 ,  C23C16/517 ,  C23C16/52 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US10541117B2

公开(公告)日：2020-01-21

申请号：US14937174

申请日：2015-11-10

Applicant: Lam Research Corporation

Inventor： Shankar Swaminathan ,  Pramod Subramonium ,  Frank L. Pasquale ,  Jeongseok Ha ,  Chloe Baldasseroni

IPC: C23C16/458 ,  H01L21/687 ,  H01J37/32

Abstract: Heights of carrier ring supports are increased at a side of a wafer that is located closer to a spindle of a plasma chamber. The heights are increased relative to a height of a carrier ring support that is located closer to side walls of the plasma chamber. The increase in the height results in an increase in thickness of a thin film deposited on the wafer to further achieve uniformity in thickness of the thin film across a top surface of the wafer.

公开(公告)号：US20170121819A1

公开(公告)日：2017-05-04

申请号：US14937174

申请日：2015-11-10

Applicant: Lam Research Corporation

Inventor： Shankar Swaminathan ,  Pramod Subramonium ,  Frank L. Pasquale ,  Jeongseok Ha ,  Chloe Baldasseroni

IPC: C23C16/50 ,  C23C14/48 ,  C23C16/455 ,  C23C16/458

Abstract: Heights of carrier ring supports are increased at a side of a wafer that is located closer to a spindle of a plasma chamber. The heights are increased relative to a height of a carrier ring support that is located closer to side walls of the plasma chamber. The increase in the height results in an increase in thickness of a thin film deposited on the wafer to further achieve uniformity in thickness of the thin film across a top surface of the wafer.

公开(公告)号：US20170103914A1

公开(公告)日：2017-04-13

申请号：US14949533

申请日：2015-11-23

Applicant: Lam Research Corporation

Inventor： Daniel Damjanovic ,  Pramod Subramonium ,  Nagraj Shankar

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76834 ,  H01L23/481

Abstract: Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated.