公开(公告)号：US06197181B1

公开(公告)日：2001-03-06

申请号：US09045245

申请日：1998-03-20

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: C25D502

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract translation: 阐述了将金属化互连结构应用于具有沉积在其表面上的阻挡层的半导体工件的方法。 该方法包括在阻挡层上形成超薄金属种子层。 超薄种子层具有小于或等于约500埃的厚度。 然后通过在其上沉积附加金属以提供增强的种子层来增强超薄籽晶层。 增强的种子层在分布在工件内的基本上所有凹陷特征的侧壁上的所有点处具有等于或大于在工件的外部设置表面上的标称种子层厚度的约10％的厚度。

公开(公告)号：US07462269B2

公开(公告)日：2008-12-09

申请号：US09885451

申请日：2001-06-20

Applicant: Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D5/18 ,  C25D7/12

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US07144805B2

公开(公告)日：2006-12-05

申请号：US10882664

申请日：2004-07-01

Applicant: LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

Inventor： LinLin Chen ,  Lyndon W. Graham ,  Thomas L. Ritzdorf ,  Dakin Fulton ,  Robert W. Batz, Jr.

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Abstract translation: 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

公开(公告)号：US06994776B2

公开(公告)日：2006-02-07

申请号：US09882613

申请日：2001-06-15

Applicant: Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D17/00 ,  C25B15/00 ,  C25B9/00

CPC classification number: H01L21/76877

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

公开(公告)号：US06699373B2

公开(公告)日：2004-03-02

申请号：US09944152

申请日：2001-08-30

Applicant: Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

Inventor： Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

IPC: C25D1700

CPC classification number: H01L21/68721 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/687 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68785

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution. In one embodiment, the plurality of contacts are in the form of discrete flexures while in another embodiment the plurality of contacts are in the form of a Belleville ring contact. A flow path may be provided in the contact assembly for providing a purging gas to the plurality of contacts and the peripheral edge of the workpiece. The purging gas may be used to assist in the formation of the barrier of the contact assembly. A combined electroplating/electroless plating tool and method are also set forth.

Abstract translation: 阐述了将金属镀在工件表面上的反应器。 反应器包括反应器碗，其包括设置在其中的电镀溶液和设置在与电镀溶液接触的反应器碗中的阳极。 接触组件与反应器碗内的阳极间隔开。 接触组件包括多个触点，其设置成接触工件表面的周边边缘以向工件的表面提供电镀功率。 当工件与其接合时，触头在工件的表面上执行擦拭动作。触头组件还包括设置在多个触点内部的屏障。 阻挡层包括设置成接合工件的表面以帮助将多个触点与电镀溶液隔离的构件。 在一个实施例中，多个触点是离散弯曲的形式，而在另一个实施例中，多个触点是贝尔维尔环接触的形式。 可以在接触组件中设置流路，以向多个触点和工件的周边边缘提供净化气体。 吹扫气体可用于帮助形成接触组件的屏障。 还提出了组合电镀/无电镀工具和方法。

公开(公告)号：US06309524B1

公开(公告)日：2001-10-30

申请号：US09386610

申请日：1999-08-31

Applicant: Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

Inventor： Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

IPC: C25D1704

CPC classification number: H01L21/2885 ,  A61K35/12 ,  C12N2500/25 ,  C12N2500/32 ,  C12N2500/34 ,  C12N2500/40 ,  C12N2501/11 ,  C12N2501/39 ,  C12N2501/395 ,  C12N2506/22 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith. The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution. In one embodiment, the plurality of contacts are in the form of discrete flexures while in another embodiment the plurality of contacts are in the form of a Belleville ring contact. A flow path may be provided in the contact assembly for providing a purging gas to the plurality of contacts and the peripheral edge of the workpiece. The purging gas may be used to assist in the formation of the barrier of the contact assembly. A combined electroplating/electroless plating tool and method are also set forth.

Abstract translation: 阐述了将金属镀在工件表面上的反应器。 反应器包括反应器碗，其包括设置在其中的电镀溶液和设置在与电镀溶液接触的反应器碗中的阳极。 接触组件与反应器碗内的阳极间隔开。 接触组件包括多个触点，其设置成接触工件表面的周边边缘以向工件的表面提供电镀功率。 当工件与其接合时，触头对工件的表面执行擦拭动作。 接触组件还包括设置在多个触点内部的屏障。 阻挡层包括设置成接合工件的表面以帮助将多个触点与电镀溶液隔离的构件。 在一个实施例中，多个触点是离散弯曲的形式，而在另一个实施例中，多个触点是贝尔维尔环接触的形式。 可以在接触组件中设置流路，以向多个触点和工件的周边边缘提供净化气体。 吹扫气体可用于帮助形成接触组件的屏障。 还提出了组合电镀/无电镀工具和方法。

公开(公告)号：US06939448B2

公开(公告)日：2005-09-06

申请号：US10409690

申请日：2003-04-07

Applicant: Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

Inventor： Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

IPC: C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  H01L21/288 ,  C25D17/00

CPC classification number: C25D17/06 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H01L21/2885 ,  Y10T29/49002

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

公开(公告)号：US06911127B2

公开(公告)日：2005-06-28

申请号：US10353325

申请日：2003-01-28

Applicant: Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

Inventor： Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

IPC: C23C18/16 ,  A61K35/12 ,  C23C28/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  H01L21/288

CPC classification number: H01L21/2885 ,  A61K35/12 ,  C12N2500/25 ,  C12N2500/32 ,  C12N2500/34 ,  C12N2500/40 ,  C12N2501/11 ,  C12N2501/39 ,  C12N2501/395 ,  C12N2506/22 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

Abstract translation: 接触组件，具有接触组件的电镀机以及用于制造微电子工件的接触组件的方法。 接触组件可以是湿接触组件或干接触组件。 用于电镀系统的接触组件可以包括支撑构件和联接到支撑构件的接触系统。 例如，支撑构件可以是环或另一结构，其具有限定开口的内壁，所述开口被构造成允许工件沿着进入路径移动通过支撑构件。 在一个实施例中，支撑构件是导电环，其具有通过间隙彼此间隔开的从环环悬垂的多个柱。 接触系统可以联接到支撑构件的柱。 接触系统可以具有多个接触构件，其相对于支撑构件向内突出到开口中并且相对于进入路径横向地突出。 接触构件可以包括具有覆盖至少一部分偏置元件的接触位置和电介质涂层的导电偏置元件，例如手指。 接触构件还可以具有被配置为接合工件上的种子层的凸起特征，以将电流传导到种子层。

公开(公告)号：US06869510B2

公开(公告)日：2005-03-22

申请号：US09998142

申请日：2001-10-30

Applicant: Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

Inventor： Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

IPC: C23C18/16 ,  A61K35/12 ,  C23C28/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  H01L21/288

CPC classification number: H01L21/2885 ,  A61K35/12 ,  C12N2500/25 ,  C12N2500/32 ,  C12N2500/34 ,  C12N2500/40 ,  C12N2501/11 ,  C12N2501/39 ,  C12N2501/395 ,  C12N2506/22 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution.

Abstract translation: 阐述了将金属镀在工件表面上的反应器。 反应器包括反应器碗，其包括设置在其中的电镀溶液和设置在与电镀溶液接触的反应器碗中的阳极。 接触组件与反应器碗内的阳极间隔开。 接触组件包括多个触点，其设置成接触工件表面的周边边缘以向工件的表面提供电镀功率。 当工件与其接合时，触头在工件的表面上执行擦拭动作。触头组件还包括设置在多个触点内部的屏障。 阻挡层包括设置成接合工件的表面以帮助将多个触点与电镀溶液隔离的构件。

公开(公告)号：US06309520B1

公开(公告)日：2001-10-30

申请号：US09386803

申请日：1999-08-31

Applicant: Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

Inventor： Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

IPC: C25D1700

CPC classification number: C25D17/001 ,  C25D7/123

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution. In one embodiment, the plurality of contacts are in the form of discrete flexures while in another embodiment the plurality of contacts are in the form of a Belleville ring contact. A flow path may be provided in the contact assembly for providing a purging gas to the plurality of contacts and the peripheral edge of the workpiece. The purging gas may be used to assist in the formation of the barrier of the contact assembly. A combined electroplating/electroless plating tool and method are also set forth.

Abstract translation: 阐述了将金属镀在工件表面上的反应器。 反应器包括反应器碗，其包括设置在其中的电镀溶液和设置在与电镀溶液接触的反应器碗中的阳极。 接触组件与反应器碗内的阳极间隔开。 接触组件包括多个触点，其设置成接触工件表面的周边边缘以向工件的表面提供电镀功率。 当工件与其接合时，触头在工件的表面上执行擦拭动作。触头组件还包括设置在多个触点内部的屏障。 阻挡层包括设置成接合工件的表面以帮助将多个触点与电镀溶液隔离的构件。 在一个实施例中，多个触点是离散弯曲的形式，而在另一个实施例中，多个触点是贝尔维尔环接触的形式。 可以在接触组件中设置流路，以向多个触点和工件的周边边缘提供净化气体。 吹扫气体可用于帮助形成接触组件的屏障。 还提出了组合电镀/无电镀工具和方法。