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公开(公告)号：US10396527B2
公开(公告)日：2019-08-27
申请号：US15622294
申请日：2017-06-14
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Itshak Kalifa , Elad Mentovich , Sylvie Rockman
Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
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公开(公告)号：US20180366905A1
公开(公告)日：2018-12-20
申请号：US15622294
申请日：2017-06-14
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Itshak Kalifa , Elad Mentovich , Sylvie Rockman
CPC classification number: H01S5/18316 , H01S5/06226 , H01S5/18308 , H01S5/1833 , H01S5/18333 , H01S5/18341 , H01S5/18347 , H01S5/1838 , H01S5/2081 , H01S5/3095 , H01S5/34366
Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
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公开(公告)号：US12055774B2
公开(公告)日：2024-08-06
申请号：US17453222
申请日：2021-11-02
Applicant: Mellanox Technologies, Ltd.
Inventor： Dimitrios Kalavrouziotis , Yuri Berk , Vladimir Iakovlev , Elad Mentovich , Tamir Sharkaz
CPC classification number: G02B6/4239 , B29D11/00009 , G02B6/4244
Abstract: Various embodiments provide methods for fabricating a couplable electro-optical device. An example method comprises fabricating a pillar on a substrate by forming a lens spacer portion about an electro-optical component fabricated on the substrate; and adhering unshaped lens material to an exposed surface of the pillar. The exposed surface of the pillar is disposed opposite the substrate. The example method further comprises maintaining the unshaped lens material at a reflow temperature for a reflow time to allow the lens material to reflow into a formed lens shape, and curing the lens material to form an integrated lens having the formed lens shape secured to the lens spacer portion and formed about the electro-optical component on the substrate.
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公开(公告)号：US11764543B2
公开(公告)日：2023-09-19
申请号：US16989907
申请日：2020-08-11
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Vladimir Iakovlev , Yuri Berk , Paraskevas Bakopoulos , Elad Mentovich
CPC classification number: H01S5/18302 , G02F1/212 , H01S5/0071 , H01S5/0085 , H01S5/0265 , H01S5/02255 , H01S5/34313 , G02F2203/10 , H01S5/18308 , H01S5/18341 , H01S5/3095
Abstract: An optoelectronic device includes a substrate and first thin film layers disposed on the substrate and patterned to define a vertical-cavity surface-emitting laser (VCSEL), which is configured to emit optical radiation along an optical axis perpendicular to the substrate. Second thin film layers are disposed over the first thin film layers and are patterned to define an optical modulator in which the optical radiation propagates in a direction parallel to the substrate, and an optical coupler configured to couple the optical radiation from the VCSEL into the optical modulator.
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公开(公告)号：US20220271499A1
公开(公告)日：2022-08-25
申请号：US17249224
申请日：2021-02-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Isabelle Cestier , Elad Mentovich
Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.
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Patent Agency Ranking
公开(公告)号：US20210313770A1
公开(公告)日：2021-10-07
申请号：US16841824
申请日：2020-04-07
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Elad Mentovich , Tamir Sharkaz
Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.
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公开(公告)号：US10461507B1
公开(公告)日：2019-10-29
申请号：US15944955
申请日：2018-04-04
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Elad Mentovich
Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.
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公开(公告)号：US11721952B2
公开(公告)日：2023-08-08
申请号：US16828764
申请日：2020-03-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Itshak Kalifa , Elad Mentovich , Vladimir Iakovlev , Yuri Berk , Tamir Sharkaz
CPC classification number: H01S5/18322 , H01S5/021 , H01S5/0217 , H01S5/0218 , H01S5/02461 , H01S5/1838 , H01S5/18311 , H01S5/18358 , H01S5/18363 , H01S5/3095 , H01S5/34306 , H01S5/34353 , H01S5/04257
Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.
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公开(公告)号：US20210336418A1
公开(公告)日：2021-10-28
申请号：US16989907
申请日：2020-08-11
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Vladimir Iakovlev , Yuri Berk , Paraskevas Bakopoulos , Elad Mentovich
Abstract: An optoelectronic device includes a substrate and first thin film layers disposed on the substrate and patterned to define a vertical-cavity surface-emitting laser (VCSEL), which is configured to emit optical radiation along an optical axis perpendicular to the substrate. Second thin film layers are disposed over the first thin film layers and are patterned to define an optical modulator in which the optical radiation propagates in a direction parallel to the substrate, and an optical coupler configured to couple the optical radiation from the VCSEL into the optical modulator.
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公开(公告)号：US20210305783A1
公开(公告)日：2021-09-30
申请号：US16828764
申请日：2020-03-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Itshak Kalifa , Elad Mentovich , Vladimir Iakovlev , Yuri Berk , Tamir Sharkaz
Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.
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