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    Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
    11.
    发明授权
    Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure 有权
    在衬底中形成开口阵列的方法以及形成半导体器件结构的相关方法

    公开(公告)号：US09087699B2

    公开(公告)日：2015-07-21

    申请号：US13646131

    申请日：2012-10-05

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward

    IPC: H01L29/06 ,  H01L21/033 ,  H01L21/768 ,  H01L27/108

    CPC classification number: H01L29/0657 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/76816 ,  H01L27/10888

    Abstract: A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.

    Abstract translation: 一种在衬底中形成开口阵列的方法。 该方法包括形成模板结构，该模板结构包括多个平行特征以及与衬底上的多个附加平行特征垂直相交的多个附加平行特征以限定孔，多个平行特征中的每一个具有基本相同的尺寸 以及作为多个附加平行特征中的每一个的相对间隔。 在每个孔中形成嵌段共聚物材料。 处理嵌段共聚物材料以形成限定开口图案的图案化聚合物材料。 开口的图案被转移到基板上以在基板中形成开口阵列。 还描述了形成半导体器件结构的方法和半导体器件结构。

    Methods of forming semiconductor device structures, and methods of forming capacitor structures
    17.
    发明授权
    Methods of forming semiconductor device structures, and methods of forming capacitor structures 有权

    公开(公告)号：US10090376B2

    公开(公告)日：2018-10-02

    申请号：US14065662

    申请日：2013-10-29

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward ,  J. Neil Greeley

    IPC: H01L21/306 ,  H01L21/02 ,  H01L49/02 ,  H01L21/311 ,  H01L27/108

    Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

    SEMICONDUCTOR STRUCTURES INCLUDING SELF-ASSEMBLED POLYMER DOMAINS REGISTERED TO THE UNDERLYING SELF-ASSEMBLED POLYMER DOMAINS, TEMPLATES COMPRISING THE SAME, AND METHODS OF FORMING THE SAME
    19.
    发明申请
    SEMICONDUCTOR STRUCTURES INCLUDING SELF-ASSEMBLED POLYMER DOMAINS REGISTERED TO THE UNDERLYING SELF-ASSEMBLED POLYMER DOMAINS, TEMPLATES COMPRISING THE SAME, AND METHODS OF FORMING THE SAME 审中-公开
    包括自组装聚合物领域的自组装聚合物领域的半导体结构，包含它们的模板及其形成方法

    公开(公告)号：US20150380260A1

    公开(公告)日：2015-12-31

    申请号：US14851494

    申请日：2015-09-11

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward

    IPC: H01L21/308 ,  H01L23/544 ,  H01L21/768

    CPC classification number: H01L21/3086 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/76879 ,  H01L23/544 ,  H01L2924/0002 ,  Y10T428/24182 ,  Y10T428/24612 ,  H01L2924/00

    Abstract: A semiconductor structure comprises a first self-assembled block copolymer material within a trench in a substrate and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises self-assembled polymer domains registered to sidewalls of the trench and extending a length of the trench. The second self-assembled block copolymer material comprises self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises a different material from the first self-assembled block copolymer material. A template comprises lines extending a length of a trench in a substrate and separated by openings exposing a floor of the trench in a substrate. Each of the lines comprises the first self-assembled block copolymer material and the second self-assembled block copolymer material overlying the first self-assembled block copolymer material.

    Abstract translation: 半导体结构包括在衬底中的沟槽内的第一自组装嵌段共聚物材料和覆盖第一自组装嵌段共聚物材料的第二自组装嵌段共聚物材料。 第一自组装嵌段共聚物材料包括自组装聚合物畴，其注入到沟槽的侧壁并延伸沟槽的一定长度。 第二自组装嵌段共聚物材料包括自组装的聚合物畴，该聚合物域覆盖并注册到第一自组装嵌段共聚物材料的自组装聚合物区域。 第一自组装嵌段共聚物材料包括与第一自组装嵌段共聚物材料不同的材料。 模板包括在衬底中延伸一长度的沟槽并且通过露出衬底中沟槽的底部的开口分开的线。 每条线包括第一自组装嵌段共聚物材料和覆盖第一自组装嵌段共聚物材料的第二自组装嵌段共聚物材料。

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