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    Dynamically boosting read voltage for a memory device
    11.
    发明授权
    Dynamically boosting read voltage for a memory device 有权

    公开(公告)号：US12205641B2

    公开(公告)日：2025-01-21

    申请号：US17834702

    申请日：2022-06-07

    Applicant: Micron Technology, Inc.

    Inventor： Nicola Ciocchini ,  Andrea Gotti

    IPC: G11C13/00 ,  H10N70/00

    Abstract: Systems, methods, and apparatus related to dynamically determining read voltages used in memory devices. In one approach, a memory device has a memory array including memory cells. One or more resistors are formed as part of the memory array. A memory controller increments a counter as write operations are performed on the memory cells. When the counter reaches a limit, a write operation is performed on the resistors. The write operation applies voltages to the resistors similarly as applied to the memory cells over time during normal operation. When performing a read operation, a current is applied to one or more of the resistors to determine a boost voltage. When reading the memory cells, a read voltage is adjusted based on the boost voltage. The memory cells are read using the adjusted read voltage.

    DYNAMICALLY BOOSTING READ VOLTAGE FOR A MEMORY DEVICE
    15.
    发明申请
    DYNAMICALLY BOOSTING READ VOLTAGE FOR A MEMORY DEVICE 有权

    公开(公告)号：US20220301623A1

    公开(公告)日：2022-09-22

    申请号：US17834702

    申请日：2022-06-07

    Applicant: Micron Technology, Inc.

    Inventor： Nicola Ciocchini ,  Andrea Gotti

    IPC: G11C13/00 ,  H01L45/00

    Abstract: Systems, methods, and apparatus related to dynamically determining read voltages used in memory devices. In one approach, a memory device has a memory array including memory cells. One or more resistors are formed as part of the memory array. A memory controller increments a counter as write operations are performed on the memory cells. When the counter reaches a limit, a write operation is performed on the resistors. The write operation applies voltages to the resistors similarly as applied to the memory cells over time during normal operation. When performing a read operation, a current is applied to one or more of the resistors to determine a boost voltage. When reading the memory cells, a read voltage is adjusted based on the boost voltage. The memory cells are read using the adjusted read voltage.

    DYNAMIC ADJUSTMENT OF THRESHOLD VOLTAGE OFFSETS FOR WORDLINE GROUPS
    19.
    发明申请
    DYNAMIC ADJUSTMENT OF THRESHOLD VOLTAGE OFFSETS FOR WORDLINE GROUPS 有权

    公开(公告)号：US20240427500A1

    公开(公告)日：2024-12-26

    申请号：US18733350

    申请日：2024-06-04

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Nicola Ciocchini ,  Thomas Lentz ,  Ugo Russo

    IPC: G06F3/06 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26

    Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a set of memory cells of the memory device; identifying a wordline group coupled to the set of memory cells of the memory device; identifying a threshold voltage offset bin associated with the set of memory cells; determining a current temperature associated with the set of memory cells; determining, based on the threshold voltage offset bin and the current temperature, a read mask identifier associated with the set of memory cells; determining, based on the read mask identifier and the wordline group, a set of threshold voltage offsets associated with the set of memory cells; and performing the read operation using the set of threshold voltage offsets.

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