公开(公告)号：US5087321A

公开(公告)日：1992-02-11

申请号：US460581

申请日：1990-01-03

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

IPC分类号： H01L21/18 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

公开(公告)号：US08125734B2

公开(公告)日：2012-02-28

申请号：US11899605

申请日：2007-09-05

申请人： Hiroshi Umezaki ,  Seiji Nakagawa ,  Yuhsuke Matsumoto ,  Yoshihisa Takeo ,  Gen Oikawa ,  Hiroshi Kamio

发明人： Hiroshi Umezaki ,  Seiji Nakagawa ,  Yuhsuke Matsumoto ,  Yoshihisa Takeo ,  Gen Oikawa ,  Hiroshi Kamio

IPC分类号： G11B5/60 ,  G11B5/31 ,  G11B15/64

CPC分类号： G11B5/4853

摘要： Embodiments of the present invention provide a magnetic slider of which terminals have a sufficiently large process margin for the laser condition in the SBB process. According to one embodiment, a magnetic slider comprises: a read element and a write element; plural wiring lines which are connected to the read element and the write element; a protective film which covers the read element, the write element and the plural-wiring lines; plural slider pads formed on the protective film; and plural studs which respectively connect the slider pads and the wiring lines and are covered by the protective film, wherein each of the slider pads comprises a chromium film, a nickel iron film and a gold film, the nickel iron film is formed between the chromium film and the gold film, and the chromium film is formed between the nickel iron film and one of the studs and is in contact with the protective film.

摘要翻译： 本发明的实施例提供了一种磁性滑块，其端子在SBB过程中具有足够大的处理余量用于激光条件。 根据一个实施例，磁性滑块包括：读取元件和写入元件; 连接到读取元件和写入元件的多个布线; 覆盖读取元件，写入元件和多个布线的保护膜; 形成在保护膜上的多个滑块; 以及分别连接滑块和布线并被保护膜覆盖的多个螺柱，其中每个滑块包括铬膜，镍铁膜和金膜，镍铁膜形成在铬 膜和金膜，并且在镍铁膜和其中一个螺柱之间形成铬膜，并与保护膜接触。

公开(公告)号：US5795407A

公开(公告)日：1998-08-18

申请号：US737503

申请日：1996-11-08

申请人： Hiroshi Ishii ,  Hiroshi Kamio

发明人： Hiroshi Ishii ,  Hiroshi Kamio

IPC分类号： C23C22/12 ,  C23C22/36 ,  C23C22/56 ,  C23C22/73 ,  C23C22/78 ,  C23C22/82 ,  C23C22/83 ,  C23C22/07

CPC分类号： C23C22/83 ,  C23C22/362 ,  C23C22/73

摘要： To improve the water resisting secondary adhesion of paint films to zinc phosphate conversion coatings on aluminum, the initially formed conversion coating is treated by spraying with a second liquid treatment composition that either is itself a liquid composition capable of forming a zinc phosphate conver- sion coating on aluminum or is made by diluting such a conversion coating forming composition.

摘要翻译： PCT No.PCT / US95 / 05543 371日期：1996年11月8日 102（e）日期1996年11月8日PCT提交1995年5月10日PCT公布。 公开号WO95 / 31587 日期1995年11月23日为了提高漆膜对铝上的磷酸锌转化涂层的耐水二次附着力，初始形成的转化涂层通过喷涂第二液体处理组合物进行处理，第二液体处理组合物本身是能够形成锌的液体组合物 通过在铝上形成磷酸盐转化涂层，或通过稀释这种转化涂层形成组合物制成。

公开(公告)号：US5312600A

公开(公告)日：1994-05-17

申请号：US50732

申请日：1993-04-20

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

IPC分类号： C30B15/14 ,  C30B15/30

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

摘要翻译： 用于制造直径大的硅单晶的装置取决于切克劳斯基法，其中在保持（10）的温度上提供适当的开口（11），以防止由气氛气体引起的不期望的影响。 设备的主要元件是开口（11）的面积之和大于在保温盖（10）的下端和硅溶液层之间形成的间隙（18）的面积，而且 保温盖和绝热构件（12）由金属板构成。

公开(公告)号：US4848272A

公开(公告)日：1989-07-18

申请号：US162064

申请日：1988-02-29

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4588 ,  C30B25/10

摘要： An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

摘要翻译： 一种用于形成外延层的装置，包括：第一基座，设置在反应炉中，具有由热反射材料构成的外周，并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座， 所述第一基座处于预定的空间，并且具有由热反射材料构成的内周，并且能够支撑多个半导体晶片，使得这些半导体晶片面对由第一基座支撑的半导体晶片，以及一对热反射构件 设置在第一基座的外周和第二基座的内周之间的反应炉中。 在外延生长过程期间，第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。

公开(公告)号：US06319622B1

公开(公告)日：2001-11-20

申请号：US09633170

申请日：2000-08-04

申请人： Satoshi Shigematsu ,  Takao Imagawa ,  Koichi Nishioka ,  Hiroshi Kamio ,  Katsuhisa Usami

发明人： Satoshi Shigematsu ,  Takao Imagawa ,  Koichi Nishioka ,  Hiroshi Kamio ,  Katsuhisa Usami

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： Magnetoresistive and spin valve heads have a layered structure. Common to each of the layered structures of these heads is the combination of a soft-magnetic layer of essentially NiFe near a spacer layer of essentially Ta, which is used for insuring (111) crystal orientation of the NiFe layer. An isolate layer is interposed between the spacer layer and the soft-magnetic layer to prevent a diffusion boundary from being created at the interface of these layers which tends to degrade the soft-magnetic property of the NiFe layer, especially when the thickness of the soft-magnetic layer is 10 and nm or less. The isolate layer is one of a composition in which the principal component is a magnetic element that is not solid soluble with Ta, a composition in which the principal component is a non-magnetic element that is not solid soluble with Ni and Fe, a composition in which the principal component is at least one of the elements of Co, Fe, Ti, V, Zr, Nb, Mo, Hf, W, Tc, Ru, Rh, Pd, Ag, Re, Os, Ir, Pt and Au; or a composition in which the principal component is of Co(100−X)Fe(X), where 20≧X>O. The isolate layer has a structure that is amorphous, an fcc structure.

摘要翻译： 磁阻和旋转阀头具有分层结构。 这些磁头的每个层状结构的共同之处在于用于确保NiFe层的（111）晶体取向的基本上Ta的间隔层附近的基本上NiFe的软磁性层的组合。 在间隔层和软磁性层之间插入隔离层，以防止在这些层的界面处产生扩散边界，这倾向于降低NiFe层的软磁特性，特别是当软质的厚度 磁性层为10nm以下。 隔离层是其中主要成分是与Ta不固溶的磁性元素的组合物之一，其中主要成分是不与Ni和Fe固溶的非磁性元素的组成，组成 其中主要成分是Co，Fe，Ti，V，Zr，Nb，Mo，Hf，W，Tc，Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素 ; 或其中主成分为Co（100-X）Fe（X）的组合物，其中20> = X> O。 隔离层具有无定形，fcc结构的结构。

公开(公告)号：US06172859B2

公开(公告)日：2001-01-09

申请号：US08683978

申请日：1996-07-22

申请人： Katsuro Watanabe ,  Takashi Kawabe ,  Shigeru Tadokoro ,  Hiroshi Kamio ,  Takao Imagawa

发明人： Katsuro Watanabe ,  Takashi Kawabe ,  Shigeru Tadokoro ,  Hiroshi Kamio ,  Takao Imagawa

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/5526 ,  G11B5/59683 ,  G11B2005/3996

摘要： A magnetoresistive head in which Barkhausen noise is substantially suppressed and a variation in reproduction is minimized, and a magnetic disk apparatus using the same magnetic head have been provided. The feature of the magnetic head and the magnetic disk apparatus of the invention resides in the provision of the longitudinal bias layer which comprises a hard magnetic thin film formed on an underlayer made of either of a ferromagnetic thin film having a body-centered cubic lattice crystal structure formed of body-centered cells, an amorphous ferromagnetic thin film or antiferromagnetic thin film having a body-centered cubic lattice crystal structure formed of body-centered cells.

摘要翻译： 巴克豪森噪声基本上被抑制并且再现变化最小化的磁阻头，并且已经提供了使用相同磁头的磁盘装置。 本发明的磁头和磁盘装置的特征在于提供纵向偏置层，其包括形成在由具有体心立方晶格晶体的铁磁性薄膜制成的底层上的硬磁薄膜 以身体为中心的细胞构成的结构，由身体中心细胞形成的体心立方晶格结构的非晶铁磁性薄膜或反铁磁性薄膜。

公开(公告)号：US5969910A

公开(公告)日：1999-10-19

申请号：US858240

申请日：1997-05-19

申请人： Takao Imagawa ,  Shigeru Tadokoro ,  Yasunari Tajima ,  Hiroshi Kamio

发明人： Takao Imagawa ,  Shigeru Tadokoro ,  Yasunari Tajima ,  Hiroshi Kamio

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T428/1107

摘要： A magnetic head having a magnetoresistive head having a spin valve structure in which a composite magnetic layer of a rotatable magnetizing direction layer and oxide or the like is used for a lower shielding layer and/or an upper shielding layer and a magnetic disk apparatus using such a head are disclosed. According to the invention, a magnetic head having a head of a magnetoresistance effect type generating a high output with low noises and a magnetic disk apparatus having a large quantity with high recording density can be realized.

摘要翻译： 一种磁头，具有具有自旋阀结构的磁阻头，其中可旋转磁化方向层和氧化物等的复合磁性层用于下屏蔽层和/或上屏蔽层，以及使用这种磁屏蔽装置的磁盘装置 公开了一个头。 根据本发明，可以实现具有产生具有低噪声的高输出的磁阻效应类型的磁头和具有高记录密度的大量磁盘装置的磁头。

公开(公告)号：US5143704A

公开(公告)日：1992-09-01

申请号：US722259

申请日：1991-06-27

申请人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

发明人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

IPC分类号： C30B15/12 ,  C30B15/14

CPC分类号： C30B15/14 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a silicon single crystal manufacturing apparatus of the type which continuously feeds starting material, a metallic heat keeping plate is arranged to cover a partition member dividing molten silicon into a single crystal growing section and a material melting section within a quartz crucible and an upper side of the material melting section. The metallic heat keeping plate is provided for the purpose of preventing the occurrence of solidification of the molten silicon on the inner side of the partition member and preventing excessive cooling of a silicon single crystal. The metallic heat keeping plate has a thickness of 3 mm or less and its material is tantalum or molybdenum. Further, the heat keeping plate includes a straight body portion formed with a plurality of openings for adjusting the temperature of the single crystal.

摘要翻译： 在连续供给原料的硅单晶制造装置中，金属保温板被配置为覆盖将熔融硅分割成单晶生长部分的分隔构件和石英坩埚内的材料熔化部分和上侧 的材料熔化部分。 金属保温板是为了防止在分隔件的内侧发生熔融硅的凝固而防止硅单晶的过度冷却。 金属保温板的厚度为3mm以下，其材料为钽或钼。 此外，保温板包括形成有用于调节单晶温度的多个开口的直体部。

公开(公告)号：US5139750A

公开(公告)日：1992-08-18

申请号：US690920

申请日：1991-06-14

申请人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

发明人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.