公开(公告)号：US20060054078A1

公开(公告)日：2006-03-16

申请号：US11270562

申请日：2005-11-10

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B11/00 ,  C30B19/00

CPC分类号： C30B19/068 ,  C30B19/02 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

摘要翻译： 用于在基板上生长晶体的液相生长装置包括含有含有用于形成晶体的粘结材料的溶液的坩埚和用于垂直保持基板的基板保持器。 衬底保持器包括连接器，接收部件和推动部件。 接收部件和推动部件彼此相对并且通过连接器连接。 推动部件保持基板的上部，而接收部件保持基板的下部。 将含有垂直保持的基板的基板保持器浸入溶液中。 接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

公开(公告)号：US06953506B2

公开(公告)日：2005-10-11

申请号：US09978633

申请日：2001-10-18

申请人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  H01L21/00 ,  H01L21/673 ,  H01L21/8242

CPC分类号： H01L21/67086 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6732 ,  H01L21/67326 ,  H01L21/67346 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/911 ,  Y10S414/135 ,  Y10T117/10 ,  Y10T117/1024

摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

摘要翻译： 晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。 通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于 它的凹陷和盖子在其开口的边缘。 还公开了利用晶片盒的液相生长系统和液相生长工艺。

公开(公告)号：US07118625B2

公开(公告)日：2006-10-10

申请号：US10676094

申请日：2003-10-02

申请人： Shoji Nishida ,  Takehito Yoshino ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Shoji Nishida ,  Takehito Yoshino ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B25/12

CPC分类号： C30B19/00 ,  C30B29/06 ,  Y02E10/546

摘要： With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.

摘要翻译： 关于通过将基板浸渍在溶剂中或使基板与溶剂接触而使硅晶体在基板上生长的硅晶体的液相生长方法，含有原料和/或掺杂剂的气体为 在至少一部分气体通过施加能量而分解后，供给溶剂。 以这种方式，提供了一种用于硅晶体的液相生长方法，能够实现连续生长并适合批量生产的方法，一种太阳能电池的制造方法和用于硅晶体的液相生长装置。

公开(公告)号：US06951584B2

公开(公告)日：2005-10-04

申请号：US10364517

申请日：2003-02-12

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  C30B31/04

CPC分类号： C30B29/06 ,  C30B19/062

摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06551908B2

公开(公告)日：2003-04-22

申请号：US09964332

申请日：2001-09-28

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B100

CPC分类号： C30B29/06 ,  C30B19/062

摘要： A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种制造半导体薄膜的方法，其中通过将多个基板浸入坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液含有半导体作为溶质，同时将其移动到 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US07282190B2

公开(公告)日：2007-10-16

申请号：US10563115

申请日：2005-05-17

申请人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

发明人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

IPC分类号： C01B33/26 ,  C30B15/20

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02658 ,  Y02E10/546 ,  Y02P70/521

摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

摘要翻译： 通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成 硅层中的pn结。 因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。

公开(公告)号：US06682990B1

公开(公告)日：2004-01-27

申请号：US09656014

申请日：2000-09-07

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L2130

CPC分类号： H01L31/1804 ,  H01L21/67207 ,  H01L21/6835 ,  H01L21/76259 ,  H01L31/0504 ,  H01L31/1892 ,  H01L2221/68368 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/96 ,  Y10S438/977

摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.

摘要翻译： 根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或 通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。

公开(公告)号：US20060160336A1

公开(公告)日：2006-07-20

申请号：US10563115

申请日：2005-05-17

申请人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

发明人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

IPC分类号： H01L21/20 ,  C23C16/24

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02658 ,  Y02E10/546 ,  Y02P70/521

摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

摘要翻译： 通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成 硅层中的pn结。 因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。

公开(公告)号：US20050066881A1

公开(公告)日：2005-03-31

申请号：US10938509

申请日：2004-09-13

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： H01L31/182 ,  C30B28/08 ,  C30B28/10 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1032 ,  Y10T117/1056

摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.

摘要翻译： 提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状 并且保持在比原料硅的熔点高的温度。 该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。

公开(公告)号：US06190937B1

公开(公告)日：2001-02-20

申请号：US08999132

申请日：1997-12-29

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2176

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  H01L2221/68368 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔 （b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在 多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。